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Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes 被引量:2
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作者 汪莱 杨迪 +1 位作者 郝智彪 罗毅 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期25-30,共6页
InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by me... InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy (MOVPE), which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes. 展开更多
关键词 ingan quantum dot light emitting diode MOVPE
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Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity 被引量:2
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作者 Tao Yang Yan‑Hui Chen +7 位作者 Ya‑Chao Wang Wei Ou Lei‑Ying Ying Yang Mei Ai‑Qin Tian Jian‑Ping Liu Hao‑Chung Guo Bao‑Ping Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第12期115-125,共11页
Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region... Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs. 展开更多
关键词 Green vertical cavity surface emitting laser gan Low threshold ingan quantum dots
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InGaN/GaN量子阱悬空微盘发光二极管
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作者 朱刚毅 宁波 +8 位作者 仇国庆 郭春祥 杨颖 李欣 李炳辉 施政 戴俊 秦飞飞 王永进 《光子学报》 EI CAS CSCD 北大核心 2024年第5期207-214,共8页
设计并制备了三种不同结构的电泵浦InGaN/GaN量子阱微盘发光器件,对其光增益和光损耗进行了分析和优化。以p型层的结构为分类标准,器件Ⅰ为圆柱形;器件Ⅱ为器件Ⅰ的悬空结构;器件Ⅲ是悬空的圆环形结构。实验和仿真结果表明,三种器件结构... 设计并制备了三种不同结构的电泵浦InGaN/GaN量子阱微盘发光器件,对其光增益和光损耗进行了分析和优化。以p型层的结构为分类标准,器件Ⅰ为圆柱形;器件Ⅱ为器件Ⅰ的悬空结构;器件Ⅲ是悬空的圆环形结构。实验和仿真结果表明,三种器件结构中,器件Ⅱ的结果最好。电极布局为内p外n型的圆柱形器件表面电流分布能够保证发光区和微腔高增益区重合,悬空结构能够降低微盘在垂直方向上的光损耗,有利于更好的光学增益。考虑到共振模式,器件Ⅱ在注入电流大于0.7 mA时,器件Ⅱ实现了峰值波长为408.2 nm、半峰宽为2.62 nm的振荡模式输出。这种电泵浦InGaN/GaN量子阱悬浮微盘二极管器件的设计思路对电泵浦微盘或微环激光器的研制具有重要参考意义。 展开更多
关键词 gan微腔 损耗和增益竞争 ingan/gan量子阱 片上光源
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硅基InGaN/GaN多量子阱微盘器件的发光、探测和数据传输
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作者 秦飞飞 卢雪瑶 +6 位作者 王潇璇 吴佳启 曹越 张蕾 樊学峰 朱刚毅 王永进 《发光学报》 EI CAS CSCD 北大核心 2024年第6期978-985,共8页
光源和探测器的集成可有效促进轻量化和小型化光电系统的发展,InGaN/GaN多量子阱器件中发光与探测共存现象为收发一体芯片的设计提供了可能。本文采用标准半导体工艺制备了硅片上集成的圆盘形InGaN/GaN多量子阱阵列器件,并对其发光、探... 光源和探测器的集成可有效促进轻量化和小型化光电系统的发展,InGaN/GaN多量子阱器件中发光与探测共存现象为收发一体芯片的设计提供了可能。本文采用标准半导体工艺制备了硅片上集成的圆盘形InGaN/GaN多量子阱阵列器件,并对其发光、探测以及基本通信特性进行了研究。微盘型器件中的共振模式有助于提升其探测特性,同时各向同性的辐射特性有助于器件作为光源时与探测器在空间上的耦合。作为光源,该器件的开启电压为2.5 V,中心波长455 nm,-3 dB带宽为5.4 MHz。作为探测器,该器件对紫外到蓝光波段的光有响应,探测性能随波长增加而减弱,截止波长450 nm。在365 nm光源激发下,该器件具有最高开关比7.2×10^(4),下降沿时间为0.41 ms。同时,基于单个微盘器件,本文构建并演示了半双工通信系统,在不同频段实现数据传输。这项研究对于电驱动光源制备以及收发一体的光通信具有重要意义。 展开更多
关键词 硅基ingan/gan 多量子阱器件 发光与探测 半双工通信
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells 被引量:2
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作者 梁明明 翁国恩 +4 位作者 张江勇 蔡晓梅 吕雪芹 应磊莹 张保平 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第5期328-332,共5页
The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with different barrier thick-nesses are studied by means of high resolution X-ray diffraction (HRXRD), a cross-sectional transmissio... The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with different barrier thick-nesses are studied by means of high resolution X-ray diffraction (HRXRD), a cross-sectional transmission electron mi-croscope (TEM), and temperature-dependent photoluminescence (PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodic- ity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization po- tentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy (or the localization potential) increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents. 展开更多
关键词 ingan/gan multiple quantum wells barrier thickness thermal quenching localization potential
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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift 被引量:1
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作者 Ping Chen De-Gang Zhao +8 位作者 De-Sheng Jiang Jing Yang Jian-Jun Zhu Zong-Shun Liu Wei Liu Feng Liang Shuang-Tao Liu Yao Xing Li-Qun Zhang 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第3期221-224,共4页
In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11... In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles. 展开更多
关键词 ingan/gan multiple quantum well(MQW) POLARIZATION FIELD ELECTROLUMINESCENCE spectra SHIFT electron leakage current
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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 被引量:1
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作者 胡晓龙 张江勇 +2 位作者 尚景智 刘文杰 张保平 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期653-657,共5页
This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap la... This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal- optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer. 展开更多
关键词 exciton longitudinal-optical-phonon ingan/gan single quantum well gan cap layer Huang-Rhys factor
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Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well 被引量:1
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作者 陈钊 杨薇 +8 位作者 刘磊 万成昊 李磊 贺永发 刘宁炀 王磊 李丁 陈伟华 胡晓东 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第10期522-526,共5页
The InGaN/GaN blue light emitting diode(LED) is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wav... The InGaN/GaN blue light emitting diode(LED) is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions(above 90%) under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED. 展开更多
关键词 efficiency droop alleviation ingan/gan triangular quantum well blue light emitting diode
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A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells
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作者 严启荣 闫其昂 +3 位作者 石培培 牛巧利 李述体 章勇 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第2期357-360,共4页
A strain-compensated InGaN quantum well(QW) active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode(LED) are improved compared w... A strain-compensated InGaN quantum well(QW) active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode(LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current. 展开更多
关键词 ingan-Algan/gan quantum well ingan/gan quantum well spectral stability dual-blue lightemitting diode
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Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
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作者 曹文彧 贺永发 +3 位作者 陈钊 杨薇 杜为民 胡晓东 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第7期415-419,共5页
The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr... The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE. 展开更多
关键词 ELECTROLUMINESCENCE quantum-confined Stark effect ingan/gan quantum wells laser diode
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Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
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作者 乔良 马紫光 +7 位作者 陈弘 吴海燕 陈雪芳 杨浩军 赵斌 何苗 郑树文 李述体 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第10期442-445,共4页
In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LE... In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. 展开更多
关键词 TMIn-treatment ingan/gan quantum well green LED
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
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作者 Xiang Li De-Gang Zhao +15 位作者 De-Sheng Jiang Jing Yang Ping Chen Zong-Shun Liu Jian-Jun Zhu Wei Liu Xiao-Guang He Xiao-Jing Li Feng Liang Jian-Ping Liu Li-Qun Zhang Hui Yang Yuan-Tao Zhang Guo-Tong Du Heng Long Mo Li 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第1期498-502,共5页
Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is i... Four blue-violet light emitting InGaN/GaN multiple quantum well(MQW) structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers. 展开更多
关键词 ingan/gan multiple quantum wells localization effect well thickness
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Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes
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作者 Sheng Cao Xiao-Ming Wu +1 位作者 Jun-Lin Liu Feng-Yi Jiang 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第2期92-95,共4页
Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-p... Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K.The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states:(i) carrier relaxation from shallow into deep localization states,(ii) band filling of shallow and deep localization states, and(iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature.The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures. 展开更多
关键词 CARRIER Dynamics Determined Carrier-Phonon Coupling ingan/gan Multiple quantum Well BLUE Light EMITTING DIODES
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Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO_3 ferroelectric film
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作者 彭静 吴传菊 +6 位作者 孙堂友 赵文宁 吴小锋 刘文 王双保 揭泉林 徐智谋 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期504-509,共6页
BaTiO3 (BTO) ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric... BaTiO3 (BTO) ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photolumineseence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs. 展开更多
关键词 ingan/gan multiple quantum well light emitting diodes ferroelectric film BaTiO3 optical properties
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High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45V
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作者 ZHANG Dong-Yan ZHENG Xin-He +3 位作者 LI Xue-Fei WU Yuan-Yuan WANG Jian-Feng YANG Hui 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第6期295-298,共4页
We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties.Thc open circuit voltage (Voc) keeps increasing logarithmically with concentrat... We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties.Thc open circuit voltage (Voc) keeps increasing logarithmically with concentration ratio until 60suns.The peak Voc of InGaN/GaN MQW solar cells,which has a predominant peak wavelength of 456nm from electroluminescence measurements,is found to be 2.45 V when the concentration ratio reaches 333×.Furthermore,the dcpendence of conversion efficiency and fill factor on concentration ratio are analyzed. 展开更多
关键词 ingan/gan SOLAR quantum
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Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells
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作者 XIE Zi-Li ZHANG Rong +9 位作者 LIU Bin XIU Xiang-Qian SU Hui LI Yi HUA Xue-Mei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG You-Dou 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第8期247-249,共3页
Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire ... Blue-red complex light emitting InGaN/GaN multi-quantum well(MQW)structures are fabricated by metal organic chemical vapor deposition(MOCVD).The structures are grown on a 2-inch diameter(0001)oriented(c−face)sapphire substrate,which consists of an approximately 2-µm−thick GaN template and a five-period layer consisting of a 4.9-nm-thick In0.18Ga0.82N well layer and a GaN barrier layer.The surface morphology of the MQW structures is observed by an atomic force microscope(AFM),which indicates the presence of islands of several tens of nanometers in height on the surface.The high resolution x−ray diffraction(XRD)θ/2θscan is carried out on the symmetric(0002)of the InGaN/GaN MQW structures.At least four order satellite peaks presented in the XRD spectrum indicate that the thickness and alloy compositions of the individual quantum wells are repeatable throughout the active region.Besides the 364 nm GaN band edge emission,two main emissions of blue and amber light from these MQWs are found,which possibly originate from the carrier recombinations in the InGaN/GaN QWs and InGaN quasi-quantum dots embedded in the QWs. 展开更多
关键词 ingan/gan SAPPHIRE quantum
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Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells
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作者 ZHANG Xiao-Fu LI Yu-Dong +1 位作者 GUO Qi LU Wu 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第7期135-137,共3页
We investigate the photoluminescence(PL)emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation.The PL peak intensity exhibits a slight enhancement after low-dose electron ... We investigate the photoluminescence(PL)emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation.The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation(2×10^(13) e/cm^(2)),and then decreases with the cumulative electron dose.Meanwhile,the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high.With respect to the yellow photoluminescence,there is no significant change until the electron fluence has accumulated up to 10^(14) e/cm^(2). 展开更多
关键词 ingan/gan Electron quantum
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Miniband Formation in GaN/AlN Constant-Total-Effective-Radius Multi-shell Quantum Dots
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作者 Solaimani M. 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期136-139,共4页
We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots (CTER-MSQDs) by calculating the subband energies. We find a different behavior of the miniband widths... We study the procedure of miniband formation in CaN/lAIN constant-total-effective-radius multi-shell quantum dots (CTER-MSQDs) by calculating the subband energies. We find a different behavior of the miniband widths and miniband gaps when the number of wells changes. It is shown that with increasing the inner quantum dot radiusRin, the number of minigaps decreases; with increasing the outer quantum dot radius Rout, the number of minigaps increases. We show that in the CTER-MSQDs systems, two kinds of minigaps exist: in the type (i) ones, minigaps increase monotonically when the number of wells increases while in the type (ii) ones, with increasing the number of wells, some of minigaps create, increase, at a critical number of wells decrease and finally vanish. Thus tuning of the m/nigaps and miniband widths in the CTER-MSQDs systems by using the number of wells, inner and outer quantum dot radii Rin and Rout is now possible. 展开更多
关键词 Miniband Formation in gan/AlN Constant-Total-Effective-Radius Multi-shell quantum dots gan
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抛物线型衬底InGaN/GaN发光二极管的模拟研究 被引量:7
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作者 夏长生 李志锋 +2 位作者 王茺 陈效双 陆卫 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第1期100-104,共5页
针对发射到衬底中的光子,提出了一种具有抛物线型衬底结构的InGaN/GaN发光二极管,并对平面衬底和抛物线型衬底InGaN/GaN发光二极管的光子运动轨迹、发射功率角度分布和外量子效率进行了模拟计算.结果表明相对于平面衬底发光二极管,抛物... 针对发射到衬底中的光子,提出了一种具有抛物线型衬底结构的InGaN/GaN发光二极管,并对平面衬底和抛物线型衬底InGaN/GaN发光二极管的光子运动轨迹、发射功率角度分布和外量子效率进行了模拟计算.结果表明相对于平面衬底发光二极管,抛物线型衬底发光二极管可以充分利用发射到衬底中的光子,使其正向光子发射功率增加12.6倍,外量子效率提高1.22倍,同时具有发射准平行光的功能. 展开更多
关键词 ingan/gan发光二极管 光子运动轨迹 外量子效率
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表面应力诱导InGaN量子点的生长及其性质 被引量:3
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作者 李昱峰 韩培德 +2 位作者 陈振 黎大兵 王占国 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第1期39-43,共5页
为了得到高性能的 Ga N基发光器件 ,有源层采用 MOCVD技术和表面应力的不均匀性诱导方法生长了 In-Ga N量子点 ,并通过原子力显微镜 (AFM)、透射电子显微镜 (TEM)和光致发光 (PL )谱对其微观形貌和光学性质进行了观察和研究 .AFM和 TEM... 为了得到高性能的 Ga N基发光器件 ,有源层采用 MOCVD技术和表面应力的不均匀性诱导方法生长了 In-Ga N量子点 ,并通过原子力显微镜 (AFM)、透射电子显微镜 (TEM)和光致发光 (PL )谱对其微观形貌和光学性质进行了观察和研究 .AFM和 TEM观察结果表明 :In Ga N/ Ga N为平均直径约 30 nm,高度约 2 5 nm的圆锥 ;In Ga N量子点主要集中在圆锥形的顶部 ,其密度达到 5 .6× 10 1 0 cm- 2 .室温下 ,In Ga N量子点材料 PL谱强度大大超出相同生长时间的 In Ga N薄膜材料 ,这说明 In Ga N量子点有望作为高性能有源层材料应用于 Ga N基发光器件 . 展开更多
关键词 表面应力 ingan 量子点 生长 铟镓氮化合物 MOCVD
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