A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de...A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.展开更多
基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸...基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸以降低其引入的1/f噪声,同时设计高Q值分布式谐振电路,从而有效降低了VCO的输出相位噪声。通过采用背靠背变容二极管对来增加VCO输出频率调谐带宽。测试结果表明,所设计芯片在5 V供电时的电流约180 m A,电调电压在1-13 V变化下输出频率覆盖8.8-10 GHz,典型输出功率为10 d Bm,单边带相位噪声为-115 d Bc/Hz@100 k Hz。芯片尺寸为2.5 mm×1.6 mm。展开更多
An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEH...An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.展开更多
For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- taine...For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.展开更多
A transimpedance amplifier based on InGaP/GaAs HBTs,which is applicable for 10Gbps bit rate,is developed and realized.Compact chip layout guarantees good flat gain,linear phase,and small group delay time variation.Mea...A transimpedance amplifier based on InGaP/GaAs HBTs,which is applicable for 10Gbps bit rate,is developed and realized.Compact chip layout guarantees good flat gain,linear phase,and small group delay time variation.Measured transimpedance gain is 40 dB·Ω and 3dB bandwidth is 10GHz.展开更多
Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and ...Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.展开更多
文摘A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.
文摘基于InGaP/GaAs异质结双极晶体管（HBT）工艺设计了一款X波段低相噪单片集成压控振荡器（VCO）,该VCO采用Colpitts双推（push-push）电路结构,芯片上集成了负阻振荡电路、分布式谐振器、变容二极管和耦合输出电路。通过优化HBT器件尺寸以降低其引入的1/f噪声,同时设计高Q值分布式谐振电路,从而有效降低了VCO的输出相位噪声。通过采用背靠背变容二极管对来增加VCO输出频率调谐带宽。测试结果表明,所设计芯片在5 V供电时的电流约180 m A,电调电压在1-13 V变化下输出频率覆盖8.8-10 GHz,典型输出功率为10 d Bm,单边带相位噪声为-115 d Bc/Hz@100 k Hz。芯片尺寸为2.5 mm×1.6 mm。
文摘An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.
文摘For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.
文摘A transimpedance amplifier based on InGaP/GaAs HBTs,which is applicable for 10Gbps bit rate,is developed and realized.Compact chip layout guarantees good flat gain,linear phase,and small group delay time variation.Measured transimpedance gain is 40 dB·Ω and 3dB bandwidth is 10GHz.
文摘Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.
