Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, ...Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.展开更多
Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large...Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.展开更多
文摘Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.
基金supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212)Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061)+7 种基金the support of Aalto University Doctoral SchoolWalter Ahlstram FoundationElektroniikkainsinoorien SaatioSahkoinsinooriliiton SaatioNokia FoundationFinnish Foundation for Technology Promotion (Tekniikan Edistamissaatio)Waldemar von Frenckell’s FoundationKansallis-Osake-Pankki Fund。
文摘Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.
文摘通过比较不同的浸出剂浸出锑化铟时铟的浸出率，找出合适的浸出剂，并对锑化铟的浸渍工艺进行优化。考察了HNO3浓度、液固比、浸渍时间及浸渍温度4个因素对铟的浸出率的影响。结果表明：锑化铟酸浸提取铟的最佳工艺条件为：HNO3浓度8 mol／L ，液固比3．5∶1，浸渍时间20 min ，浸渍温度25℃。在此工艺条件下，铟的浸出率能达到99．5％以上。
