Transparent conducting indium-tin-oxide(ITO) film as full front electrode in Ⅲ–Ⅴ compound solar cell

The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.

Preparation of indium tin oxide targets with a high density and single phase structure by normal pressure sintering process

The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.

Electrical and optical properties of indium tin oxide/epoxy composite film

The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.

Effects of SiO_2 and TiO_2 on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition

Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.

Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Preparation of High Quality Indium Tin Oxide Film on a Microbial Cellulose Membrane Using Radio Frequency Magnetron Sputtering

微生物引起的纤维素(MC ) 膜由醋菌属 xylinum NUST4.1 生产了，为透明的铟锡氧化物(ITO ) 的制造被用作灵活底层电极。透明、传导性的 ITO 薄电影在房间温度使用收音机频率(RF ) 磁控管劈啪作响在 MC 膜上被扔。最佳 ITO 免职条件被检验水晶的结构，有 X 光检查衍射(XRD ) 的表面形态学和 optoelectrical 特征，扫描电子显微镜学(SEM ) ，原子力量显微镜学(AFM ) ，和紫外光谱学完成。样品的表抵抗与一根四点的探针被测量，这部电影的抵抗力是计算的。结果表明扔的 ITO 晶体的比较喜欢的取向强烈依赖于与氧内容(O2/Ar，体积比率) 在劈啪作响的房间。并且 ITO 水晶的结构直接决定扔 ITO 的电影的传导性。高传导性[pBAD33 上的 PBAD 的表抵抗 120 ntrol，能生产 CoQ10 直到 3.24 mg？

Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.

Effect of Sn^(4+) content on properties of indium tin oxide nanopowders

Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.

Synthesis and sintering of indium tin oxide nanoparticles by citrate-nitrate combustion method

Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, TEM, and SEM. The ITO nanoparticles grew steadily with the increase of heat treatment temperature, and the 700~C calcined particles had a crystallite size of 25.3 nm and a specific surface area of 26.1 m2.g i The avoidance of chlorine ions in the synthesis process decreases particle agglomeration and promotes powder densification. The 900~C sintered pellet had a density of 67.6% of theoretical density （TD） and increased steadily to 97.3% for the 1400℃ sintered ceramics, respectively.

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts

Enhanced performance in organic photovoltaic devices with a KMnO_4 solution treated indium tin oxide anode modification

The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.

Microstructure Study on Nano-phase Powder of Indium Tin Oxide

hemical co-precipitation method was used to prepare indium tin hydroxide. Indium tin hydroxide has the structure of cubic crystal. The cubic crystal structure transformed to amorphous after heat treatment at 250℃ for 1 h. When the heat treatment temperature was higher than 280℃, the amorphous transformed to cubic crystal structure. After heat treatment at 600℃ for 1 h, the particle size of indium tin oxide is 8～20 nm. The weight ratio of In∶Sn is near 9∶1. Its granule has spherical shape. The dispersity is good.

Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation

Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Indium tin oxide （ITO） thin films deposited on flexible polyethylene terephthalate （PET） substrates at low temperature by DC magnetron sputtering from an In-Sn （90-10 wt pct） alloy target were studied. The correla- tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes （FOLEDs）. The fabricated FOLEDs with a structure of PET/ITO/NPB （50 nm）/Alq （20 nm）/Mg：Ag （100 nm） showed a maximum luminance of 2125 cd/m^2 at 13 V.

Work Function Optimization Technology of Indium Tin Oxide Films

Indium tin oxide(In_(2)O_(3)∶Sn)film is one of the most potential materials in the field of semiconductor industry.However,untreated In2O3∶Sn film has a low work function which can result in a high energy barrier that hinders the passage of carriers through the interface,thus leading to poor overall performance of directly prepared devices.In this study,crystalline transparent conductive In_(2)O_(3)∶Sn films were prepared by plasma exposure assisted magnetron sputtering under room temperature.Based on multiple testing methods,it can be found that the low temperature crystallization characteristics of In_(2)O_(3)∶Sn film were enhanced and the work function was effectively improved after Ar^(+)plasma exposure.The increase of the work function of In_(2)O_(3)∶Sn film was due to the increment of Sn⁃O bond on the surface brought by the transition from low oxidation state Sn^(2+)to high oxidation state Sn^(4+)under the action of high exposure.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.

Phase evolutions of two kinds of co-precipitated indium-tin oxide pre-cursors by heat-treatment

Two kinds of indium-tin oxide (ITO) precursors, cubic indium hydroxide(In(OH)_3) and orthorhombic indium oxide hydroxide (InOOH), were prepared by a co-precipitationmethod. With the help of X-ray diffraction (XRD), thermo-gravimetric analysis (TGA) and differentialthermal analysis (DTA), phase evolutions from cubic In(OH)_3 and orthorhombic InOOH to cubic ITOsolid solution and rhombohedral ITO solid solution by heat-treatment had been comprehensivelyinvestigated. The transformation from cubic In(OH)_3 to cubic ITO solid solution started as low as150 deg C and ended at about 300 degC, and it exhibited an endothermic behavior. The transformationfrom orthorhombic InOOH to rhombohedral ITO solid solution started at 220 deg C and ended at about430 deg C. Moreover, this transformation was composed of two processes: the one was the dehydrationof InOOH exhibiting an endothermic behavior and the other was the transformation from dehydrationproducts to rhombohedral ITO solid solution exhibiting a strong exothermic behavior. RhombohedralITO solid solution was metastable in air and it would transform to cubic ITO solid solution byheat-treatment. The transformation from rhombohedral ITO solid solution to cubic ITO solid solutionstarted at 578 deg C and ended below 800 deg C, and it exhibited a weak exothermic behavior.