The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素....磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.展开更多
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
文摘磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.
