Ultrafast dynamics in photo-excited Mott insulator Sr_(3)Ir_(2)O_7 at high pressure

High-pressure ultrafast dynamics,as a new crossed research direction,are sensitive to subtle non-equilibrium state changes that might be unresolved by equilibrium states measurements,providing crucial information for studying delicate phase transitions caused by complex interactions in Mott insulators.With time-resolved transient reflectivity measurements,we identified the new phases in the spin–orbit Mott insulator Sr_(3)Ir_(2)O_7 at 300 K that was previously unidentified using conventional approaches such as x-ray diffraction.Significant pressure-dependent variation of the amplitude and lifetime obtained by fitting the reflectivity?R/R reveal the changes of electronic structure caused by lattice distortions,and reflect the critical phenomena of phase transitions.Our findings demonstrate the importance of ultrafast nonequilibrium dynamics under extreme conditions for understanding the phase transition of Mott insulators.

Optical study of magnetic topological insulator MnBi_(4)Te_7

We present an infrared spectroscopy study of the magnetic topological insulator MnBi_(4)Te_7 with antiferromagnetic(AFM) order below the Neel temperature TN= 13 K. Our investigation reveals that the low-frequency optical conductivity consists of two Drude peaks, indicating a response of free carriers involving multiple bands. Interestingly, the narrow Drude peak grows strongly as the temperature decreases, while the broad Drude peak remains relatively unchanged. The onset of interband transitions starts around 2000 cm^(-1), followed by two prominent absorption peaks around 10000 cm^(-1) and 20000 cm^(-1). Upon cooling, there is a notable transfer of spectral weight from the interband transitions to the Drude response. Below TN, the AFM transition gives rise to small anomalies of the charge response due to a band reconstruction.These findings provide valuable insights into the interplay between magnetism and the electronic properties in MnBi_(4)Te_7.

Quantitative determination of the critical points of Mott metal–insulator transition in strongly correlated systems

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal–insulator transition. The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition. Additionally, it presents a consistent description of the two distinct forms of the Mott transition points.

Higher-order topological Anderson insulator on the Sierpiński lattice

Disorder effects on topological materials in integer dimensions have been extensively explored in recent years. However, its influence on topological systems in fractional dimensions remains unclear. Here, we investigate the disorder effects on a fractal system constructed on the Sierpiński lattice in fractional dimensions. The system supports the second-order topological insulator phase characterized by a quantized quadrupole moment and the normal insulator phase. We find that the second-order topological insulator phase on the Sierpiński lattice is robust against weak disorder but suppressed by strong disorder. Most interestingly, we find that disorder can transform the normal insulator phase to the second-order topological insulator phase with an emergent quantized quadrupole moment. Finally, the disorder-induced phase is further confirmed by calculating the energy spectrum and the corresponding probability distributions.

Pressure induced insulator to metal transition in quantum spin liquid candidate NaYbS_(2)

Pressure induced insulator to metal transition followed by the appearance of superconductivity has been observed recently in inorganic quantum spin liquid candidate NaYbSe_(2).In this paper,we study the properties of isostructural compound NaYbS_(2)under pressure.It is found that the resistance of Na YbS_(2)single crystal exhibits an insulating state below 82.9 GPa,but with a drop of more than six orders of magnitude at room temperature.Then a minimum of resistance is observed at about 100.1 GPa and it moves to lower temperature with further compression.Finally,a metallic state in the whole temperature range is observed at about 130.3 GPa accompanied by a non-Fermi liquid behavior below 100 K.The insulator to metal transition,non-monotonic resistance feature and non-Fermi liquid behavior of NaYbS_(2)under pressure are similar to those of NaYbSe_(2),suggesting that these phenomena might be the universal properties in NaLnCh_(2)(Ln=rare earth,Ch=O,S,Se)system.

Thermal Hall effect and the Wiedemann–Franz law in Chern insulator

Thermal Hall effect, where a transverse temperature difference is generated by implementing a longitudinal temperature gradient and an external magnetic field in the perpendicular direction to systems, is a useful tool to reveal transport properties of quantum materials. A systematic study of the thermal Hall effect in a Chern insulator is still lacking. Here,using the Landauer–Büttiker formula, we investigated the thermal Hall transport of the Harper–Hofstadter model with flux φ= 1/2 and its generalizations. We demonstrated that the Wiedemann–Franz law, which states that the thermal Hall conductivity is linearly proportional to the quantum Hall conductivity in the low temperature limit, is still valid in this Chern insulator, and that the thermal Hall conductivity can be used to characterize the topological properties of quantum materials.

Numerical Simulation of Contamination Accumulation Characteristics of Composite Insulators in Salt Fog Environment

To investigate the fouling characteristics of the composite insulator surface under the salt fog environment,the FXBW-110/120-2 composite insulator was taken as the research object.Based on the field-induced charge mechanism,the multi-physical field coupling software COMSOL was used to numerically simulate the fouling characteristics,explored the calculation method of ESDD,and demonstrated its rationality.Based on this method,the pollution characteristics of the composite insulator under the pollution fog environment were studied,and the influence of wind speed,droplet size,and voltage type on the pollution characteristics of the composite insulator was analyzed.The results showed that:with the increase in wind speed,the amount of accumulated pollution of insulator increases in the range of droplet size,and the relationship between wind speed and accumulated pollution is approximately linear;at the same wind speed,the amount of accumulated pollution increases with the increase of droplet size under the action of DC voltage;when there is no voltage,the amount of dirt on the upper surface of the insulator is more than that on the lower surface,while it is the opposite under DC voltage.

Magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulators

Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes.Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator Mn Bi2Te4.We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment,Kerr and Faraday effects occur.Under perpendicular electric field,antiferromagnetic topological insulators(AFMTI)show sharp peaks at the interband transition threshold,whereas trivial insulators show small adjacent positive and negative peaks.Gate voltage and Fermi energy can be tuned to reveal the differences between AFMTI and trivial insulators.We find that AFMTI with large antiferromagnetic order can be proposed as a pure magneto-optical rotator due to sizable Kerr(Faraday)angles and vanishing ellipticity.Under external magnetic moment,AFMTI and trivial insulators are significantly different in the magnitude of Kerr and Faraday angles and ellipticity.For the qualitative behaviors,AFMTI shows distinct features of Kerr and Faraday angles when the spin configurations of the system change.These phenomena provide new possibilities to optically detect and manipulate the layered topological antiferromagnets.

Resistance Measurements and Interpretations Relating to Flashover of Artificially Contaminated Ceramic Insulator Strings

The flashover of insulator strings occurring at normal working voltages undercontaminated/polluted conditions, obviously deserves serious consideration. Though much researchhas been gone into pollution-induced flashover phenomena but grey areas still exist in ourknowledge. In the present experimental study the breakdown (flashover) voltages across gaps oninsulator top surfaces and gaps between sheds (on the underside of an insulator), also the flashoverstudies on a single unit and a 3-unit insulator strings were carried out. An attempt has been madeto correlate the values obtained for all the cases. From the present investigation it was found thatresistance measurement of individual units of a polluted 3-unit string before and after flashoverindicates that strongly differing resistances could be the cause of flashover of ceramic discinsulator strings.

Measurement of alumina film induced ablation of internal insulator in solid rocket environment

This study investigates the ablation of internal insulation induced by the deposition of an alumina film with different lateral film speeds.A sub-scale test solid rocket motor(SRM)was designed in an impinging jet configuration to form an alumina film on the sample and to encourage the lateral movement of the film by a high-speed wall jet.Fifteen static fire tests of the test SRM were conducted with six different jet velocities(V_(jet)=100 m/s,150 m/s,200 m/s,268 m/s,330 m/s,and 450 m/s)that indirectly affected the velocity of the wall jet and the deposition rate of alumina droplets.The ablation velocity was deduced from the difference in the sample thickness after a test using a coordinate measuring machine.The droplet deposition mass flux and wall jet velocity were obtained via two-phase flow simulation with the same jet velocity and effective pressure.As a result,the characteristics of alumina-induced ablation and the changes in ablation with jet velocities were obtained.The area within0.8×jet diameter was focused upon,where the ratio of ablation velocity to incoming alumina mass was constant for each jet velocity,and showed a similarity in jet structure.When the ablation velocity was increased from 2.05 to 9.98 mm/s with increasing jet velocity,the ratio of the ablation velocity and alumina mass flux decreased from 1.07×10^(-4)to 0.49×10^(-4)m^(3)/kg as Al_(2)O_(3)-C reactions became less efficient with a reduced residence time of the film.Because the decrease in residence time by the wall jet is more pronounced for slow reactions involved in Al_(2)O_(3)-C reactions,fast reactions in Al_(2)O_(3)-C reactions are less affected and result in a convergence of the volumetric rate of ablation per unit mass of alumina.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate

Exchange coupling between topological insulator and ferromagnetic insulator through proximity effect is strongly attractive for both fundamental physics and technological applications. Here we report a comprehensive investigation on the growth behaviors of prototype topological insulator Bi2Se3 thin film on a single-crystalline LaCoO3 thin film on SrTiO3 substrate, which is a strain-induced ferromagnetic insulator. Different from the growth on other substrates, the Bi2Se3 films with highest quality on LaCoO3 favor a relatively low substrate temperature during growth. As a result, an inverse dependence of carrier mobility with the substrate temperature is found. Moreover, the magnetoresistance and coherence length of weak antilocalization also have a similar inverse dependence with the substrate temperature, as revealed by the magnetotransport measurements. Our experiments elucidate the special behaviors in Bi2Se3/LaCoO3 heterostructures, which provide a good platform for exploring related novel quantum phenomena, and are inspiring for device applications.

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.

Design of insulator gray measurement system based on BH1750FVI

Ash dense(non-soluble sediment density,NSDD) is attached to the insulator surface material that can't dissolve in water,it is divided by the result of surface area and used for quantitative content of insulator surface non-soluble residues. Based on high voltage measurement,surface of outer insulation of ash can be used for the product line insulator pollution situation and determine whether it is able to withstand a variety of adverse factors. This paper proposes a method based on BH1750 FVI light intensity sensor for ash dense measurement.

Study of Temperature Distribution Along an Artificially Polluted Insulator String

Insulator becomes wet partially or completely, and the pollution layer on itbecomes conductive, when collecting pollutants for an extended period during dew, light rain, mist,fog or snow melting. Heavy rain is a complicated factor that it may wash away the pollution layerwithout initiating other stages of breakdown or it may bridge the gaps between sheds to promoteflashover. The insulator with a conducting pollution layer being energized, can cause a surfaceleakage current to flow (also temperature-rise). As the surface conductivity is non-uniform, theconducting pollution layer becomes broken by dry bands (at spots of high current density),interrupting the flow of leakage current. Voltage across insulator gets concentrated across drybands, and causes high electric stress and breakdown (dry band arcing). If the resistance of theinsulator surface is sufficiently low, the dry band arcs can be propagated to bridge the terminalscausing flashover. The present paper concerns the evaluation of the temperature distribution alongthe surface of an energized artificially polluted insulator string.

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

Impact of the Insulator on the Electric Field and Generation Characteristics of Vacuum Arc Metal Plasmas

The field electron emission plays a vital role in the process of vacuum discharge breakdown. The electric field strength at the cathode tip is significant to the generation char- acteristics of vacuum arc metal plasmas. To increase the field strength at the cathode tip, a coaxial electrode plasma source was employed with an insulator settled between the electrodes. The math expression of the field strength is derived based on the Gauss theory. The impact of the insulator on the electric field and parameters of plasmas were investigated by MAXWELL 3D simulation software and the Langmuir probe. In addition, a composite insulator was adopted to further strengthen the field strength. A series of experiments were performed to focus on the role of the composite insulator in detail. The experimental and simulation results indicate that, a reasonable layout of the insulator, especially the composite insulator, can effectively increase the field strength at the cathode tip and the plasma density.

A Study on Damage Rules on Insulators by Conducting Sols

Insulating parts are easily subjected to pollution which may cause damage to the electric system. A typical disc insulator is chosen as the target to test its flashover voltage by using an artificial pollution system. This test system aims at obtaining characteristic parameters of damage for chosen conducting sola to the selected insulator. Experimental results show that thickness and electric conductivity of pollutant layer over insulators are the main parameters in damage evaluation. The flashover voltage decreases with increase of thickness and/or conductivity. These results provide a better basis on further revealing the damaging nature of conducting sol materials.

Experimental Investigation on Ablation Characteristic of EPDM Insulator in Different Gas Environments

Some ablation experiments of Ethylene-Propylene-Diene Monomer(EPDM)insulator were carried out in quasi-static low temperature gas environment,gas-phase environment,two-phase environment with Al2O3 grain and high concentration Al2O3 grain gas environments.Their charring ablation rate,thickness,surface morphology and main ingredient of the charring layer were analyzed.The experiment results show that the main influent factors for the charring ablation rate are the gas temperature,grain concentration and state of grain impact;the main influent factors for the charring layer thickness are the gas velocity and environment pressure;and the process of SiO2 migrating in the charring layer occur commonly in different gas environments.They provide a foundation for the ablation mechanism research and modeling of EPDM insulator.

Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors

The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage-controlled tunnel barrier is the device transport physics. The off current, the on/off current ratio, and the inverse subthreshold slope are improved while the on current is degraded with underlap. The physics behind this behavior is the modulation of a tunnel barrier with underlap. The underlap primarily affects the tunneling component of drain current. About 50% contribution to the gate capacitance comes from the fringing electric fields emanating from the gate metal to the source and drain. The gate capacitance reduces with underlap, which should reduce the intrinsic switching delay and increase the intrinsic cut-off frequency. However, both the on current and the transconductance reduce with underlap, and the consequence is the increase of delay and the reduction of cut-off frequency.