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Controller Design for a 3 D.O.F Haptic Interface Device
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作者 崔泽 Zhao +2 位作者 Jie Cai Hegao 《High Technology Letters》 EI CAS 2002年第4期69-73,共5页
This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into considerati... This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into consideration such as adopting steel cable as transmission component and mass balance to eliminate the gravity effect. The dynamics of haptic interface including actuating device is studied. In order to provide operator with fidelity kinesthetic information, a force controller using self-learning fuzzy logic control is designed. The simulation results verify the effectiveness of the control method. 展开更多
关键词 haptic interface device DYNAMICS self-learning fuzzy control
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices 被引量:1
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作者 贾一凡 吕红亮 +10 位作者 钮应喜 李玲 宋庆文 汤晓燕 李诚瞻 赵艳黎 肖莉 王梁永 唐光明 张义门 张玉明 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期484-488,共5页
The effect of nitric oxide(NO) annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor(MOS) devices has been investigated using the time-dependent bias s... The effect of nitric oxide(NO) annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor(MOS) devices has been investigated using the time-dependent bias stress(TDBS),capacitance–voltage(C–V),and secondary ion mass spectroscopy(SIMS).It is revealed that two main categories of charge traps,near interface oxide traps(Nniot) and oxide traps(Not),have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. 展开更多
关键词 4H–SiC metal–oxide–semiconductor devices NO annealing near interface oxide traps oxide traps
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Design of shared bus DSP board in vector network analyzer
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作者 刘丹 王保锐 《Journal of Measurement Science and Instrumentation》 CAS 2013年第4期317-320,共4页
Currently,the mainstream vector network analyzer employs embedded computer module with a digital intermediate frequency(IF)board to form a high performance windows platform.Under this structure,the vector network anal... Currently,the mainstream vector network analyzer employs embedded computer module with a digital intermediate frequency(IF)board to form a high performance windows platform.Under this structure,the vector network analyzer needs a powerful encoding system to arbitrate the bus acquirement,which is usually realized by field-programmable gate array(FPGA)chip.The paper explores the shared bus design method of the digital signal processing(DSP)board in network analyzer.Firsty,it puts an emphasis on the system structure,and then the shared bus communication method is described in detail;Finally,the advantages of the shared bus communication mechanism are summanzed. 展开更多
关键词 shared bus host port interface(HPI) external memory interface(EMIF) field programmable gate array(FPGA) peripherical component interconnect(PCI)interface device
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Robot Position Control Using Force Information for Cooperative Work in Remote Robot Systems with Force Feedback
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作者 Satoru Ishikawa Yutaka Ishibashi +1 位作者 Pingguo Huang Yuichiro Tateiwa 《International Journal of Communications, Network and System Sciences》 2021年第1期1-13,共13页
This paper proposes robot position control using force information for cooperative work between two remote robot systems with force feedback in each of which a user operates a remote robot by using a haptic interface ... This paper proposes robot position control using force information for cooperative work between two remote robot systems with force feedback in each of which a user operates a remote robot by using a haptic interface device while observing work of the robot with a video camera. We also investigate the effect of the proposed control by experiment. As cooperative work, we deal with work in which two robots carry an object together. The robot position control using force information finely adjusts the position of the robot arm to reduce the force applied to the object. Thus, the purpose of the control is to avoid large force so that the object is not broken. In our experiment, we make a comparison among the following three cases in order to clarify how to carry out the control effectively. In the first case, the two robots are operated manually by a user with his/her both hands. In the second case, one robot is operated manually by a user, and the other robot is moved automatically under the proposed control. In the last case, the object is carried directly by a human instead of the robot which is operated by the user in the second case. As a result, experimental results demonstrate that the control can help each system operated manually by the user to carry the object smoothly. 展开更多
关键词 Remote Robot System Haptic interface device Force Feedback Cooperative Work Robot Position Control EXPERIMENT
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