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A method for improving reliability communication of LVDS
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作者 SHI Qian LI Zhi-zhong 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2018年第2期109-114,共6页
In order to ensure the reliability and accuracy of low voltage differential signaling(LVDS)used in remote test system serial data transmission,a(7,4)linear block code is proposed.At the expense of a certain effective ... In order to ensure the reliability and accuracy of low voltage differential signaling(LVDS)used in remote test system serial data transmission,a(7,4)linear block code is proposed.At the expense of a certain effective bandwidth,the bit error rate of data transmission is greatly reduced,and the reliability of data transmission is improved by adding monitoring symbols.The driver CLC001 and the adaptive equalizer CLC012 are used as hardwares to compensate the attenuation of the signal in the long line transmission,improve the signal integrity and ensure the reliability of data transmission.Proved by simulation on a shielded twisted pair cable with a total length of 100 m,this system realizes zero bit error transmission of the serial data at the rate of 240 Mbit/s. 展开更多
关键词 low voltage differential signalingm(LVDS)interface remote test system (7 4)linear block code
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Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary 被引量:1
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作者 Ahmed Chaouki Megherbi Said Benramache Abderrazak Guettaf 《Journal of Semiconductors》 EI CAS CSCD 2014年第3期33-38,共6页
This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate(backgating effect) in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a spac... This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate(backgating effect) in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS(t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction. 展开更多
关键词 traps pinch-off voltage resistance channel substrate interface
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