Influence on Conductivity of Polyparaphenylene by Chemical Doping and Ion Implantation

Polyparaphenylene(PPP) is prepared by AlCl 3-CuCl 2 catalysts with benzene as the monomer and is doped by chemical method and N + ion implantation. The influences of the concentration, temperature and time of chemical doping and the dose, energy and temperature of ion implantation, on PPP conductivity are investigated. The results showed that the conductivity of PPP can be improved 4～5 orders of magnitude by ion implantation and the conductivity of PPP can reach about 0.11 S·cm -1 by chemical doping. The comparison of stability of the material conductive behavior by using the two doping methods is presented. It shows that ion implantation is better than chemical doping in stabilizing the electric conductive behavior for the material.

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant substrates.Here,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process.Carbon(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu.As a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis.After removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly realized.The layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films.Molecular dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis approach.With the wide use of ion implantation technology in the microelectronics industry,this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition.However,there is a lack of studies of the yield of NV color centers at the atomic scale.In the molecular dynamics simulations described in this paper,NV color centers are pre-pared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing.The differences between the yields of NV color centers produced by implantation of carbon(C)and nitrogen(N)ions,respectively,are investigated.It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy.The effects of different pre-doping concentrations(400–1500 ppm)and implantation energies(1.0–3.0 keV)on the NV color center yield are analyzed,and it is shown that a pre-doping concentra-tion of 1000 ppm with 2 keV C-ion implantation can produce a 13%yield of NV color centers after 1600 K annealing for 7.4 ns.Finally,a brief comparison of the NV color center identification methods is presented,and it is found that the error rate of an analysis utiliz-ing the identify diamond structure coordination analysis method is reduced by about 7%compared with conventional identification+methods.

Biological Effects of Stevia rebaudianum Induced by Carbon Ion Implantation

The biological effects during seed germination were investigated after the dry seeds of Stevia rebaudianum Bertoni were implanted with carbon ion beam of 75 keV and 10 14 ions/cm 2. The results showed that the germination rate of carbon ion implanted seeds was slightly higher than that of the control, but the survival rate of the treated seedlings, on the contrary, was lower than that of the control (P<0.02), while the height of the treated seedlings was significantly higher than that of the control (P<0.01). On the 4th day after germination, the leaf cell wall in the treated group was thick, some high electron_dense substance deposited in the enlarged plasmodesma; Cell membrane creased with high electron_dense granules deposited on it. The plasma membrane protruded towards cell wall, and the granules shifted via plasmodesma or deposited onto cell wall. These phenomena may be related to the conveyance of implanted ions across cell wall, or be related to the accumulation of callose. In addition, the implantation of carbon ions could increase the lamellae of the chloroplast and cause high development of the chloroplast which sometimes contained two plastid centers in an individual chloroplast. Also, the highly developed cristae, abundant mitochondria and typical crystalloid structure in microbody could be found. All these results indicated that the anabolic and catabolic activities in the seedlings implanted with carbon ions before germination were obviously more active than those in the controls.

Effect of nitrogen ion implantation dose on torsional fretting wear behavior of titanium and its alloy

Various doses of nitrogen ions were implanted into the surface of pure titanium, Ti6Al7Nb and Ti6Al4V, by plasma immersion ion implantation. Torsional fretting wear tests involving flat specimens of no-treated and treated titanium, as well as its alloys, against a ZrO2 ball contact were performed on a torsional fretting wear test rig using a simulated physiological medium of serum solution. The treated surfaces were characterized, and the effect of implantation dose on torsional fretting behavior was discussed in detail. The results showed that the torsional fretting running and damage behavior of titanium and its alloys were strongly dependent on the dose of the implanted nitrogen ions and the angular displacement amplitude. The torsional fretting running boundary moved to smaller angular displacement amplitude, and the central light damage zone decreased, as the ion dose increased. The wear mechanisms of titanium and its alloys were oxidative wear, abrasive wear and delamination, with abrasive wear as the most common mechanism of the ion implantation layers.

Screening of Biocontrol Strain Bacillus subtilis by N^+ Ion Beam Implantation

[Objective] This study was to investigate the effect of N＋ ion beam implantation on the survival rate and mutation rate of biocontrol strain Bacillus subtilis. [Method] The factors influencing B. subtilis ion beam implantation, including culture time, dilution concentration, solvent, drying time of mycoderm were optimized. B. subtilis cells were implanted by using ion beam at dose of 2.0×10^14～4.0×10^14 ions/cm2 and the energy of 30 kev. Then the methods of culturing colonies confronting each other on plate and Oxford cup diffusion were used to screening strains. [Result] The optimal parameters were found as follows： culture in liquid for 20-24 h, dilution with sterile water to 106 cells/ml and drying time of 60 min for sample preparation; the optimal N＋ ion beam implantation dose of 2.0×10^14～4.0×10^14 ions/cm2 at the energy of 30 kev, the survival rate of 8.43%-26.71% and the mutation rate of 3.50%-5.43%. [Conclusion] This study provided reference for ion beam implantation mutation of B. subtilis.

Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation

A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p+-n junction,even in p+ anode.The results s how for the first time,helium ions,which stop in the p+ anode,also contribute to the forward voltage drop increasing and turn-off time reducing.

Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects

Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples.

Properties of Y\|Silicides Synthesized Layer by Y Implantation and RTA Annealing\+*

Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.

EFFECT OF COPPER IMPLANTATION ON ANTIBACTERIAL ACTIVITY OF AUSTENITIC STAINLESS STEEL

Antibacterial activity has been studied by copper ion implantation into 0Cr18Ni9 stainless steel. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 60-100keV energy and a dose range (0.2-2.0)×1017 ions cm-2. Saturation doses, surface concentration were calculated and the relationships between energy, dose and antibacterial activity were analyzed. Novel phases such as Fe4Cu3 and Cu0.81Ni0.19 were found after copper implantation by X-ray diffraction. The novel phases, effects on antibacterial activity have been investigated. The results show that saturation dose varies with the ions' energy. Antibacterial activity has close relation with copper,s concentration in implanted layer and Cu-rich phase.

Effects of Al and N plasma immersion ion implantation on surface microhardness,oxidation resistance and antibacterial characteristics of Cu

A1 and N were introduced into copper substrate using plasma immersion ion implantation （PIII） in order to enhance its hardness and oxidation resistance. The dosage of N ion is 5 × 1016 cm-2, and range of dosage of A1 ion is 5× 1016-2× 1017 cm-2. The oxidation tests indicate that the copper samples after undergoing PIII possess higher oxidation resistance. The degree of oxidation resistance is found to vary with implantation dosage of AI ion. The antibacterial tests also reveal that the plasma implanted copper specimens have excellent antibacterial resistance against Staphylococcus aureus, which are similar to pure copper.

Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials

To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation. The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.

ION HEATING PROCESS DURING PLASMA IMMERSION ION IMPLANTATION

The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.

Induced antibacterial capability of TiO2 coatings in visible light via nitrogen ion implantation

In order to enhance the antibacterial ability of titanium components,an antibacterial coating was fabricated on Ti surface by micro-arc oxidation(MAO)and further nitrogen plasma immersion ion implantation(N-PIII).The XPS spectra demonstrated that nitrogen was incorporated into TiO2 coatings by N-PIII and the nitrogen content on the surface of TiO2 coatings increased as the N-PIII time increased.Nitrogen-incorporated samples exhibited remarkably increased absorbance in the visible region and the light absorption edge of nitrogen-incorporated samples showed a redshift compared to MAO samples.Escherichia coli and Staphylococcus aureus were seeded on the samples to assess their antibacterial ability.The bacterial experiment demonstrated that nitrogen-incorporated TiO2 could effectively reduce the bacterial viability in visible light.Thus,the antibacterial TiO2 coatings fabricated by MAO and further N-PIII might have large potential in the medical and marine fields.

Purification and Properties of a New L-Sorbose Dehydrogenase Accelerative Protein from Bacillus megaterium Bred by Ion-Beam Implantation

Bacillus megaterium BM302 bred by ion-beam implantation produces L-sorbose dehydrogenase accelerative protein （SAP） to accelerate the activity of L-sorbose dehydrogenase （SDH） of Gluconobacter oxydans in the 2-keto-L-gulonic acid （2KLG） fermentation from L-sorbose by the mixed culture of B. megaterium BM302 and G. oxydans. The SAP purified by three chromatographic steps gave 35-fold purification with a yield of 13% and a specific activity of 5.21 units/mg protein. The molecular weight of the purified SAP was about 58 kDa. The SDH accelerative activity of SAP at pH 7 and 50℃ was the highest. Additionally, it retained 60% activity at a pH range of 6.5 ～ 10 and was stable at 20℃ ～ 60℃. After 0.32-unit SAP was added to the single cultured G. oxydans strains, the SDH activity was apparently accelerated and the 2KLG yield of GO29, GO112, GO and GI13 was enhanced 2.1, 3.3, 3.5 and 2.9 folds respectively over that of the strains without the addition of SAP.

Studies on Mutation Breeding of High-Yielding Xylanase Strains by Low-Energy Ion Beam Implantation

As a new mutagenetic method, low-energy ion implantation has been used widely in many research areas in recent years. In order to obtain some industrial strains with high xylanase yield, the wild type strain Aspergillus niger A3 was mutated by means of nitrogen ions implantation （10 keV, 2.6× 10^14 ～ 1.56 × 10^15 ions/cm^2） and a mutant N212 was isolated subsequently. However, it was found that the initial screening means of the high-yielding xylanase strains such as transparent halos was unfit for first screening. Compared with that of the wild type strain, xylanase production of the mutant N212 was increased from 320 IU/ml to 610 IU/ml, and the optimum fermentation temperature was increased from 28 ℃ to 30 ℃.

Mutation-Screening in Xylanase-Producing Strains by Ion Implantation

With ion implantation (N+, energy 10 keV and dosage 1.56×1015 N+cm-2), a high xylanase-producing strain Aspergillus niger N212 was selected. Based on an orthogonal experiment, an optimal fermentation condition was designed for this high-yield strain. The suitable medium was composed of 8% corncob; 1.0% wheat bran; 0.1%TWEEN20; 0.5% (NH4)2SO4; 0.5%NaNO3; 0.5%FeSO4, 7.5 × 10-4; MnSO4·H2O, 2.5 × 10-4; ZnSO4, 2.0 × 10-4; CoCl2, 3.0 × 10-4. At present, under our experiment condition, xylanase activity of Aspergillus niger N212 reached a level of 600 IU/ml, almost increased by 100% in xylanase production and the time of yielding xylanase was largely reduced to 12 h at 28℃.

Corrosion resistance properties of AZ31 magnesium alloy after Ti ion implantation

Magnesium alloys have a wide range of applications in industry; however, their corrosion resistance, wear resistance, and hardness are rather poor, which limit their applications. Ti ion was implanted into the AZ31 magnesium alloy surface by metal vapor vacuum arc （MEVVA） implanter. This metal arc ion source has a broad beam and high current capabilities. The implantation energy was fixed at 45 keV and the dose was at 9×10^17 cm^-2. Through ion implantation, Ti ion implantation layer with approximately 900 um in thickness was directly formed on the surface of AZ31 magnesium alloy, by which its surface property greatly improved. The chemical states of some typical elements of the ion implantation layer were analyzed by means of X-ray photoelectron spectroscopy （XPS）, while the cross sectional morphology of the ion implantation layer and the phase structure were observed by means of scanning electron microscopy （SEM） and X-ray diffraction （XRD）. The property of corrosion resistance of the Ti ion implanted layer was studied by the CS300P electrochemistry corrosion workstation in 3.5% NaCl solution. The results showed that the property of corrosion resistance was enhanced remarkably, while the corrosion velocity was obviously slowed down.

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.

COMPUTATIONAL SCHEME FOR SIMULATING PLASMA DYNAM-ICS DURING PLASMA-IMMERSION ION IMPLANTATION

Plasma-immersion ion implantation (PIII) is a technique for implanting ions into conducting, semiconducting and insulating objects. In PIII, the object being treated is immersed in a plasma and pulsed to a large negative voltage (=-1 to-100 kV). The resulting sheath expands into the ambient plasma, extracting ions and accelerating them to the target. PIII has advantages over beam-line implantation in that large surfaces can be rapidly implanted, irregularly-shaped objects can be implanted without target manipulation, and surfaces that are not line-of-sight accessible can be treated. A two-dimensional, self-consistent model of plasma dynamics appropriate for PIII is described. The model is a hybrid, with Boltzmann electrons and kinetic ions, where the ion Vlasov equation is solved using the particle-in-cell (PIC) method. Solutions of the model give the time dependence of the ion flux, energy and impact angle at the target surface, together with the evolution of the sheath.