ION HEATING PROCESS DURING PLASMA IMMERSION ION IMPLANTATION

The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.

Mutation-Screening in Xylanase-Producing Strains by Ion Implantation

With ion implantation (N+, energy 10 keV and dosage 1.56×1015 N+cm-2), a high xylanase-producing strain Aspergillus niger N212 was selected. Based on an orthogonal experiment, an optimal fermentation condition was designed for this high-yield strain. The suitable medium was composed of 8% corncob; 1.0% wheat bran; 0.1%TWEEN20; 0.5% (NH4)2SO4; 0.5%NaNO3; 0.5%FeSO4, 7.5 × 10-4; MnSO4·H2O, 2.5 × 10-4; ZnSO4, 2.0 × 10-4; CoCl2, 3.0 × 10-4. At present, under our experiment condition, xylanase activity of Aspergillus niger N212 reached a level of 600 IU/ml, almost increased by 100% in xylanase production and the time of yielding xylanase was largely reduced to 12 h at 28℃.

Corrosion resistance properties of AZ31 magnesium alloy after Ti ion implantation

Magnesium alloys have a wide range of applications in industry; however, their corrosion resistance, wear resistance, and hardness are rather poor, which limit their applications. Ti ion was implanted into the AZ31 magnesium alloy surface by metal vapor vacuum arc （MEVVA） implanter. This metal arc ion source has a broad beam and high current capabilities. The implantation energy was fixed at 45 keV and the dose was at 9×10^17 cm^-2. Through ion implantation, Ti ion implantation layer with approximately 900 um in thickness was directly formed on the surface of AZ31 magnesium alloy, by which its surface property greatly improved. The chemical states of some typical elements of the ion implantation layer were analyzed by means of X-ray photoelectron spectroscopy （XPS）, while the cross sectional morphology of the ion implantation layer and the phase structure were observed by means of scanning electron microscopy （SEM） and X-ray diffraction （XRD）. The property of corrosion resistance of the Ti ion implanted layer was studied by the CS300P electrochemistry corrosion workstation in 3.5% NaCl solution. The results showed that the property of corrosion resistance was enhanced remarkably, while the corrosion velocity was obviously slowed down.

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.

COMPUTATIONAL SCHEME FOR SIMULATING PLASMA DYNAM-ICS DURING PLASMA-IMMERSION ION IMPLANTATION

Plasma-immersion ion implantation (PIII) is a technique for implanting ions into conducting, semiconducting and insulating objects. In PIII, the object being treated is immersed in a plasma and pulsed to a large negative voltage (=-1 to-100 kV). The resulting sheath expands into the ambient plasma, extracting ions and accelerating them to the target. PIII has advantages over beam-line implantation in that large surfaces can be rapidly implanted, irregularly-shaped objects can be implanted without target manipulation, and surfaces that are not line-of-sight accessible can be treated. A two-dimensional, self-consistent model of plasma dynamics appropriate for PIII is described. The model is a hybrid, with Boltzmann electrons and kinetic ions, where the ion Vlasov equation is solved using the particle-in-cell (PIC) method. Solutions of the model give the time dependence of the ion flux, energy and impact angle at the target surface, together with the evolution of the sheath.

TWO-DIMENSIONAL NUMERICAL ANALYSIS OF PLASMA IMMERSION ION IMPLANTATION OF CYLINDRICAL BORES

Plasma immersion ion implantation (PIII), unrestricted by sight-light process, is considered a proper method for inner surface strengthening. Two-dimensional simulation oj inner surface PIII process of cylindrical bores were carried out in this paper using cold plasma fluid model, and influence of the bore's dimension on impact energy, retained dose and uniformity of inner surface were investigated.

COMPARISON OF SURFACE PROPERTIES OF Ti-6Al-4V COATED WITH TITANIUM NITRIDE, TiN+TiC+Ti(C,N)/DLC, TiN/DLC AND TiC/DLC FILMS BY PLASMA-BASED ION IMPLANTATION

The surface properties of Ti-6Al-4V alloy coated with titanium nitride, TiN+TiC+Ti(C,N)/DLC (diamond like carbon), TiN/DLC and TiC/DLC films by plasma-based ion implantation (PBII) with nitrogen, PBII with nitrogen then acetylene, PBII with nitrogen then glow discharge deposition with acetylene plus hydrogen and PBII with acetylene then glow discharge deposition with acetylene plus hydrogen respectively were studied. The corresponding films are found getting dimmer, showing light gold or gold, smoky color (uneven), light red in black (uneven), and graphite black separately. The corresponding film resistivities are given. Antioxidation ability of the titanium nitride film is poor, while the existence of carbon (or carbide) improves the antioxidation ability of the films. Having undergone excellent intermediate transitional region of nitrogen and carbon implantation, the top DLC layer of the TiN+TiC+Ti(C,N)/DLC multilayer are formed after the carbon implantation has the best adhesion with the substrate among all the multilayers. Although microhardness of the samples increases in the order of coatings of titanium nitride, TiN/DLC, TiN+TiC+Ti(C,N)/DLC and TiC/DLC, the TiN/DLC and TiC/DLC multilayers have greater brittleness as compared with other films.

Effects of Ion Implantation on in Vitro Pollen Germination and Cellular Organization of Pollen Tube in Pinus thunbergii Parl. (Japanese Black Pine)

Low-energy ion implantation, as a new technology to produce mutation in plant breeding, has been widely applied in agriculture in China. But so far there is a little understanding of the underlying mechanisms responsible for its biological effects at the cellular level. Here we report the biological effects of a nitrogen ion beams of 30 keV on the pollen grains of Pinus thunbergii Parl. In general, ion implantation inhibited pollen germination. The dose-response curve presented a particular saddle-like pattern. Ion implantation also changed the dimension of the elongated tubes and significantly induced tip swelling. Confocal microscopy indicated that the pollen tube tips in P. thunbergii contained an enriched network of microtubules. Ion implantation led to the disruption of microtubules especially in swollen tips. Treatment with colchicine demonstrated that tip swelling was caused by the disruption of microtubules in the tip, indicating a unique role for microtubules in maintaining the tip integrality of the pollen tube in conifer. Our results suggest that ion implantation induce the disruption of microtubule organization in pollen and pollen tubes and subsequently cause morphological abnormalities in the pollen tubes. This study may provide a clue for further investigation on the interaction between low-energy ion beams and pollen tube growth.

Morphology Control and Optical Absorption Properties of Ag Nanoparticles by Ion Implantation

Ion implantation is a powerful method for fabricating nanoparticles in dielectric. For the actual application of nanoparticle composites, a careful control of nanoparticles has to be achieved. In this letter, the size, distribution and morphology of Ag nanoparticles are controlled by controlling the ion current density, ion implantation sequence and ion irradiation dose. Single layer Ag nanoparticles are formed by Ag^＋ ion implantation at current density of 2.5 μ^A/cm2. By Ag and Cu ions sequential implantation, the size of single layer Ag nanoparticles increases. While, by Cu and Ag ions sequential implantation, uniform Ag nanoparticles with wide distribution are formed. The morphology of Ag nanoparticles changes to hollow and sandwiched nanoparticles by Cu^＋ ion irradiation to doses of 3×10^16 and 5×10^16 ions/cm^2. The optical absorption properties of Ag nanoparticles are also tailored by these ways.

Electrochemical Studies of Pirarubicin and Its Interaction with DNA at a Co/GC Ion Implantation Modified Electrode

The electrochemical behavior of pirarubicin(THP) and its interaction with DNA at a Co/GC modified electrode was studied by linear sweep and cyclic voltammetries. In a 0.01 mol/L B-R buffer solution(pH=7.0), the reaction of DNA with THP formed an electrochemical nonactive complex, resulting in a decrease in the THP equilibrium concentration and its reduction current. The composition of the complex was THP∶DNA=2∶1. The combining constant is 2.73×10 10 . The electrode reaction rate constant k s and the electron transfer coefficient α are 1.32 s -1 and 0.56, respectively. The decrease in the peak current was proportional to the DNA concentration and was used to determine the DNA concentration. The experiment of XPS showed that Co was surely implanted into the surface of GCE(glassy carbon electrode) and the implanted Co at GCE can improve the electrocatalytic activity.

Surface metallization of PTFE and PTFE composites by ion implantation for low-background electronic substrates in rare-event detection experiments

Polytetrafluoroethylene(PTFE)is a low-background polymer that is applied to several applications in rare-event detection and underground low-background experiments.PTFE-based electronic substrates are important for reducing the detection limit of high-purity germanium detectors and scintillator calorimeters,which are widely applied in dark matter and 0υββdetection experiments.The traditional adhesive bonding method between PTFE and copper is not conducive to working in liquid nitrogen and extremely low-temperature environments.To avoid adhesive bonding,PTFE must be processed for surface metallization owing to the mismatch between the PTFE and copper conductive layer.Low-background PTFE matrix composites(m-PTFE)were selected to improve the electrical and mechanical properties of PTFE by introducing SiO_(2)/TiO_(2) particles.The microstructures,surface elements,and electrical properties of PTFE and m-PTFE were characterized and analyzed following ion implantation.PTFE and m-PTFE surfaces were found to be broken,degraded,and cross-linked by ion implantation,resulting in C=C conjugated double bonds,increased surface energy,and increased surface roughness.Comparably,the surface roughness,bond strength,and conjugated double bonds of m-PTFE were significantly more intense than those of PTFE.Moreover,the interface bonding theory between PTFE and the metal copper foil was analyzed using the direct metallization principle.Therefore,the peel strength of the optimized electronic substrates was higher than that of the industrial standard at extremely low temperatures,while maintaining excellent electrical properties.

Effect of Ce^+ Ion Implantation upon Oxidation Resistance of Superalloy K38G

The oxidation behavior (isothermal and cyclic oxidation) of cast superalloy K38G and the effect of Ce^+ ion implantation with dose of 1×10^(17) ions/cm^2 upon its oxidation resistance at 900 and 1000 ℃ in air were investigated. Meanwhile, the influence of Ce^+ implantation on oxidation behavior of K38G with pre-oxide scale at 1000 ℃ in air was compared. The pre-oxidation was performed at 1000 ℃ in static air for 0.25 and 1.5 h, respectively. It is shown that the homogeneous external mixture oxide of rutile TiO_2+Cr_2O_3 and non-continuous internal oxide of Al_2O_3 are formed during the oxidation procedure in all the cases. The isothermal oxidation resistance and the cracking or spallation resistance of superalloy K38G implanted with Ce^+ by both of the two different implantation ways are not improved notably. This may be attributed to the mixed oxide composition characteristics and the blocking effect differences of Ce^+ segregation along the oxide grain boundaries on the transport process for different diffusing ions.

EFFECT OF CERIUM ION IMPLANTATION ON THE AQUEOUS CORROSION BEHAVIOR OF ZIRCONIUM

In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted by cerium ions with a dosage range from 1×1016 to 1×1017 ions/cm2 at about 150℃, using MEVVA source at an acceler ative voltage of 40kV. The valence of the surface layer was analyzed by X-ray photo- electron spectroscopy (XPS); Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zirconium in a 0.5mol/L H2SO4 solution. It was found that a remarkable decline in the aqueous corrosion behavior of zirconium implanted with cerium ions compared with that of the as-received zirconium. Finally, the mechanism of the corrosion resistance decline of the cerium-implanted zirconium is discussed.

Ti-Al based ohmic contacts to n-type 6H-SiC with ion implantation

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

Optical planar waveguides in Yb^(3+)-doped phosphate glasses produced by He^+ ion implantation

Optical planar waveguides in Yba＋-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He Ne laser at 633 nm The intensity calculation method （ICM） is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.

Analysis of Accumulating Ability of Heavy Metals in Lotus (Nelumbo nucifera) Improved by Ion Implantation

Heavy metals have seriously contaminated soil and water, and done harm to public health. Academician WANG Naiyan proposed that ion-implantation technique should be exploited for environmental bioremediation by mutating and breeding plants or microbes. By implanting N^＋ into Taikonglian No.l, we have selected and bred two lotus cultivars, Jingguang No.1 and Jingguang No.2. The present study aims at analyzing the feasibility that irradiation can be used for remediation of soil and water from heavy metals. Compared with parent Taikonglian No.l, the uptaking and accumulating ability of heavy metals in two mutated cultivars was obviously improved. So ion implantation technique can indeed be used in bioremediation of heavy metals in soil and water, but it is hard to select and breed a cultivar which can remedy the soil and water from all the heavy metals.

Optimization of L(+)-Lactic Acid Production from Xylose with Rhizopus Oryzae Mutant RLC41-6 Breeding by Low-Energy Ion Implantation

In order to obtain an industrial strain with a higher L（＋）-lactic acid yield, the strain Rhizopus oryzae PW352 was mutated by means of nitrogen ion beam implantation and the mutant strain Rhizopus oryzae RLC41-6 was obtained. An experimental finding was made in surprise that Rhizopus oryzae mutant RLC41-6 is not only an L（＋）-lactic acid producer from corn starch but also an efficient producer of L（＋）-lactic acid from xylose. Under optimal conditions, the production of L（＋）-lactic acid from 100 g/L xylose reached 77.39 g/L after 144 h fed-batch fermentation, A high mutation rate and a wide mutation spectrum of low-energy ion implantation were observed in the experiment.

The Effects of Low-Energy Nitrogen Ion Implantation on Pollen Exine Substructure and Pollen Germination of Cedrus deodara

The aim of this study is to investigate the biological effects of ion beams on pollen. Pollen grains of Cedrus deodara were implanted with 30 keV nitrogen ion beams at doses ranging from 1 × 10^15 ions/cm^2 to 15 × 10^15 ions/cm^2. The effects of N^＋ implantation on the pollen exine substructure were examined using an atomic force microscope （AFM）, and the structure and morphology of pollen and pollen tubes were observed using a laser scanning confocal microscope （LSCM）. AFM observations distinctly revealed the erosion of the pollen exine caused by N^＋ implantation in the micrometer to nanometer range. Typical results showed that the erosion degree was linearly proportional to the ion dose. Pollen germination experiments in vitro indicated that N^＋ implantation within a certain dose range increased the rate of pollen germination. The main abnormal phenomena in pollen tubes were also analyzed. Our results suggest that low energy ion implantation with suitable energy and dosage can be used to break the pollen wall to induce a transfer of exogenous DNA into the pollen without any damage to the cytoplasm and nuclei of the pollen. The present study suggests that a combination of the method of ion-beam-induced gene transfer and the pollen-tube pathway method （PTPW） would be a new plant transformation method.

Structure and Tribological Property of TiBN Nanocomposite Multilayer Synthesized by Ti-BN Composite Cathode Plasma Immersion Ion Implantation and Deposition

A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.

FORMATION OF HEXAGONAL Co_(2—3)C IN Co BY CARBON ION IMPLANTATION

Co thin films were subjected to 50 keV carbon ion implantation.At the dose of 2.5× 10^(17)/cm^2,a hexagonal Co-carbide phase was observed for the first time.The lattice con- stants from electron diffraction are a=0.2685 nm and c=0.4335 nm.The phase does not dis- appear until the dose of 9×10^(17)/cm^2.Auger spectra showed that the stoichiometry was Co_(2-3)C.The behavior of the ferromagnetic carbides along the descending sequence of Ni-Fe-Co by Fermi energy of solids was interpreted.Furthermore,based on the kinetic con- dition of phase transformation and the band theory of solids,a possible explanation about the difference of the results of ion-metallurgy and thermal metallurgy was proposed.