Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition.However,there is a lack of studies of the yield of NV color centers at the atomic scale.In the molecular dynamics simulations described in this paper,NV color centers are pre-pared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing.The differences between the yields of NV color centers produced by implantation of carbon(C)and nitrogen(N)ions,respectively,are investigated.It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy.The effects of different pre-doping concentrations(400–1500 ppm)and implantation energies(1.0–3.0 keV)on the NV color center yield are analyzed,and it is shown that a pre-doping concentra-tion of 1000 ppm with 2 keV C-ion implantation can produce a 13%yield of NV color centers after 1600 K annealing for 7.4 ns.Finally,a brief comparison of the NV color center identification methods is presented,and it is found that the error rate of an analysis utiliz-ing the identify diamond structure coordination analysis method is reduced by about 7%compared with conventional identification+methods.

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant substrates.Here,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process.Carbon(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu.As a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis.After removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly realized.The layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films.Molecular dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis approach.With the wide use of ion implantation technology in the microelectronics industry,this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

Optical planar waveguides in Yb^(3+)-doped phosphate glasses produced by He^+ ion implantation

Optical planar waveguides in Yba＋-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He Ne laser at 633 nm The intensity calculation method （ICM） is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.

Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation

ZnO nanowires deposited on Si substrates were prepared by thermal evaporation of a mixture of ZnO and carbon powder. Ag ions with an energy of 63 keV and a dose of 5×1015 ions/cm-2 were implanted into the as-prepared ZnO nanowires. After ion implantation, the Ag-implanted ZnO nanowires were annealed in air at different temperatures from 600℃ to 1000℃. Effects of ion implantation and thermal annealing on the structural and photoluminescent （PL） properties of the ZnO nanowires were investigated by transmission electron microscopy （TEM）, selected area energy dispersive X-ray spectroscopy （SAEDX）, X-ray diffraction （XRD）, and fluorescence spectrophotometry. TEM, HR-TEM, and SAEDX analyses demonstrated that efficient doping of Ag was achieved by ion implantation and the subsequent annealing process. XRD patterns revealed that the hexagonal wurtzite structure of ZnO nanowires was maintained after ion implantation. Photoluminescent emissions of ZnO nanowires were decreased significantly by Ag implantation but could be recovered by thermal annealing. The mechanism of the influence of ion implantation and annealing on the PL intensity was assessed.

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet （Nd：CNGG） crystal are reported. The waveguide is produced by proton （H＋） implantation at 480 keV and a fluence of 1.0x 10^17 ions/cm2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8 nm. The reflectivity calculation method （RCM） is used to reconstruct the refractive index profile. The finite-difference beam propagation method （FD-BPM） is employed to calculate the guided mode profile of the waveguide. The stopping and range of ions in matter 2010 （SRIM 2010） code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.

Structure and visible photocatalytic activity of nitrogen-doped meso-porous TiO_2 layer on Ti6Al4V substrate by plasma-based ion implantation

The nitrogen-doped porous TiO2 layer on Ti6Al4V substrate was fabricated by plasma-based ion implantation of He, O and N. In order to increase the photodegradation efficiency of TiO2 layer, two methods were used in the process by forming mesopores to increase the specific surface area and by nitrogen doping to increase visible light absorption. Importantly, TiO2 formation, porosity architectures and nitrogen doping can be performed by implantation of He, O and N in one step. After implantation, annealing at 650 ℃ leads to a mixing phase of anatase with a little rutile in the implanted layer. By removing the near surface compact layer using argon ion sputtering, the meso-porous structure was exposed on surfaces. Nitrogen doping enlarges the photo-response region of visible light. Moreover, the nitrogen dose of 8×1015 ion/cm2 induces a stronger visible light absorption. The photodegradation of rhodamine B solution with visible light sources indicates that the mesopores on surfaces and nitrogen doping contribute to an apparent increase of photocatalysis efficiency.

Oxygen vacancies and V co-doped Co_(3)O_(4) prepared by ion implantation boosts oxygen evolution catalysis

Introducing heteroatoms and defects is a significant strategy to improve oxygen evolution reaction(OER)performance of electrocatalysts.However,the synergistic interaction of the heteroatom and defect still needs further investigations.Herein,we demonstrated an oxygen vacancy-rich vanadium-doped Co_(3)O_(4)(V-Ov-Co_(3)O_(4)),fabricated by V-ion implantation,could be used for high-efficient OER catalysis.X-ray photoelectron spectra(XPS)and density functional theory(DFT)calculations show that the charge density of Co atom increased,and the reaction barrier of reaction pathway from O∗to HOO∗decreased.V-Ov-Co_(3)O_(4) catalyst shows a low overpotential of 329 mV to maintain current density of 10 mA·cm^(−2),and a small Tafel slope of 74.5 mV·dec^(−1).This modification provides us with valuable perception for future design of heteroatom-doped and defect-based electrocatalysts.

Effect of nitrogen ion implantation dose on torsional fretting wear behavior of titanium and its alloy

Various doses of nitrogen ions were implanted into the surface of pure titanium, Ti6Al7Nb and Ti6Al4V, by plasma immersion ion implantation. Torsional fretting wear tests involving flat specimens of no-treated and treated titanium, as well as its alloys, against a ZrO2 ball contact were performed on a torsional fretting wear test rig using a simulated physiological medium of serum solution. The treated surfaces were characterized, and the effect of implantation dose on torsional fretting behavior was discussed in detail. The results showed that the torsional fretting running and damage behavior of titanium and its alloys were strongly dependent on the dose of the implanted nitrogen ions and the angular displacement amplitude. The torsional fretting running boundary moved to smaller angular displacement amplitude, and the central light damage zone decreased, as the ion dose increased. The wear mechanisms of titanium and its alloys were oxidative wear, abrasive wear and delamination, with abrasive wear as the most common mechanism of the ion implantation layers.

Biological Effects of Stevia rebaudianum Induced by Carbon Ion Implantation

The biological effects during seed germination were investigated after the dry seeds of Stevia rebaudianum Bertoni were implanted with carbon ion beam of 75 keV and 10 14 ions/cm 2. The results showed that the germination rate of carbon ion implanted seeds was slightly higher than that of the control, but the survival rate of the treated seedlings, on the contrary, was lower than that of the control (P<0.02), while the height of the treated seedlings was significantly higher than that of the control (P<0.01). On the 4th day after germination, the leaf cell wall in the treated group was thick, some high electron_dense substance deposited in the enlarged plasmodesma; Cell membrane creased with high electron_dense granules deposited on it. The plasma membrane protruded towards cell wall, and the granules shifted via plasmodesma or deposited onto cell wall. These phenomena may be related to the conveyance of implanted ions across cell wall, or be related to the accumulation of callose. In addition, the implantation of carbon ions could increase the lamellae of the chloroplast and cause high development of the chloroplast which sometimes contained two plastid centers in an individual chloroplast. Also, the highly developed cristae, abundant mitochondria and typical crystalloid structure in microbody could be found. All these results indicated that the anabolic and catabolic activities in the seedlings implanted with carbon ions before germination were obviously more active than those in the controls.

Screening of Biocontrol Strain Bacillus subtilis by N^+ Ion Beam Implantation

[Objective] This study was to investigate the effect of N＋ ion beam implantation on the survival rate and mutation rate of biocontrol strain Bacillus subtilis. [Method] The factors influencing B. subtilis ion beam implantation, including culture time, dilution concentration, solvent, drying time of mycoderm were optimized. B. subtilis cells were implanted by using ion beam at dose of 2.0×10^14～4.0×10^14 ions/cm2 and the energy of 30 kev. Then the methods of culturing colonies confronting each other on plate and Oxford cup diffusion were used to screening strains. [Result] The optimal parameters were found as follows： culture in liquid for 20-24 h, dilution with sterile water to 106 cells/ml and drying time of 60 min for sample preparation; the optimal N＋ ion beam implantation dose of 2.0×10^14～4.0×10^14 ions/cm2 at the energy of 30 kev, the survival rate of 8.43%-26.71% and the mutation rate of 3.50%-5.43%. [Conclusion] This study provided reference for ion beam implantation mutation of B. subtilis.

Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation

A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p+-n junction,even in p+ anode.The results s how for the first time,helium ions,which stop in the p+ anode,also contribute to the forward voltage drop increasing and turn-off time reducing.

Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects

Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples.

Properties of Y\|Silicides Synthesized Layer by Y Implantation and RTA Annealing\+*

Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.

Effects of Al and N plasma immersion ion implantation on surface microhardness,oxidation resistance and antibacterial characteristics of Cu

A1 and N were introduced into copper substrate using plasma immersion ion implantation （PIII） in order to enhance its hardness and oxidation resistance. The dosage of N ion is 5 × 1016 cm-2, and range of dosage of A1 ion is 5× 1016-2× 1017 cm-2. The oxidation tests indicate that the copper samples after undergoing PIII possess higher oxidation resistance. The degree of oxidation resistance is found to vary with implantation dosage of AI ion. The antibacterial tests also reveal that the plasma implanted copper specimens have excellent antibacterial resistance against Staphylococcus aureus, which are similar to pure copper.

ION HEATING PROCESS DURING PLASMA IMMERSION ION IMPLANTATION

The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.

Tribological behavior of different films on Ti-6Al-4V alloy prepared by plasma-based ion implantation

The tribological behaviors of TiN coating and TiN+TiC+Ti(C, N)/diamond like carbon (DLC), TiN/DLC, TiC/DLC multilayers on Ti 6Al 4V alloy prepared by plasma based ion implantation (PBII) were compared. Under the test conditions of counterbody AISI 52100, load 1 N and speed 0.05 m/s, the tribological properties of the alloy are improved by these films in the order of TiN, TiC/DLC, TiN/DLC and TiN+TiC+Ti(C,N)/DLC. Tribological behavior is affected by the conditions of surface modification and triboexperiments. The appearance of “peaks” in the wear dynamic resistance profiles may be due or correspond to the process of formation and breaking apart of transition films. The breakthrough of the DLC coated samples may start from partially wearing out, and end with joining piece dilamination. There are transition films on all counterbodies AISI 52100. When AISI 52100 counterbody is changed to Ti 6Al 4V, the wear of most modified samples is changed from only disc to both disc and ball abrasive dominated.

Purification and Properties of a New L-Sorbose Dehydrogenase Accelerative Protein from Bacillus megaterium Bred by Ion-Beam Implantation

Bacillus megaterium BM302 bred by ion-beam implantation produces L-sorbose dehydrogenase accelerative protein （SAP） to accelerate the activity of L-sorbose dehydrogenase （SDH） of Gluconobacter oxydans in the 2-keto-L-gulonic acid （2KLG） fermentation from L-sorbose by the mixed culture of B. megaterium BM302 and G. oxydans. The SAP purified by three chromatographic steps gave 35-fold purification with a yield of 13% and a specific activity of 5.21 units/mg protein. The molecular weight of the purified SAP was about 58 kDa. The SDH accelerative activity of SAP at pH 7 and 50℃ was the highest. Additionally, it retained 60% activity at a pH range of 6.5 ～ 10 and was stable at 20℃ ～ 60℃. After 0.32-unit SAP was added to the single cultured G. oxydans strains, the SDH activity was apparently accelerated and the 2KLG yield of GO29, GO112, GO and GI13 was enhanced 2.1, 3.3, 3.5 and 2.9 folds respectively over that of the strains without the addition of SAP.

Studies on Mutation Breeding of High-Yielding Xylanase Strains by Low-Energy Ion Beam Implantation

As a new mutagenetic method, low-energy ion implantation has been used widely in many research areas in recent years. In order to obtain some industrial strains with high xylanase yield, the wild type strain Aspergillus niger A3 was mutated by means of nitrogen ions implantation （10 keV, 2.6× 10^14 ～ 1.56 × 10^15 ions/cm^2） and a mutant N212 was isolated subsequently. However, it was found that the initial screening means of the high-yielding xylanase strains such as transparent halos was unfit for first screening. Compared with that of the wild type strain, xylanase production of the mutant N212 was increased from 320 IU/ml to 610 IU/ml, and the optimum fermentation temperature was increased from 28 ℃ to 30 ℃.

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope （SEM）. The optimum condition of ions implantation, 20 keV of energy and 2.6 × 10^15N^＋/cm^2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum （ESI/MS） and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain.

Corrosion resistance properties of AZ31 magnesium alloy after Ti ion implantation

Magnesium alloys have a wide range of applications in industry; however, their corrosion resistance, wear resistance, and hardness are rather poor, which limit their applications. Ti ion was implanted into the AZ31 magnesium alloy surface by metal vapor vacuum arc （MEVVA） implanter. This metal arc ion source has a broad beam and high current capabilities. The implantation energy was fixed at 45 keV and the dose was at 9×10^17 cm^-2. Through ion implantation, Ti ion implantation layer with approximately 900 um in thickness was directly formed on the surface of AZ31 magnesium alloy, by which its surface property greatly improved. The chemical states of some typical elements of the ion implantation layer were analyzed by means of X-ray photoelectron spectroscopy （XPS）, while the cross sectional morphology of the ion implantation layer and the phase structure were observed by means of scanning electron microscopy （SEM） and X-ray diffraction （XRD）. The property of corrosion resistance of the Ti ion implanted layer was studied by the CS300P electrochemistry corrosion workstation in 3.5% NaCl solution. The results showed that the property of corrosion resistance was enhanced remarkably, while the corrosion velocity was obviously slowed down.