Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respective...Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.展开更多
Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prep...Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.展开更多
首先简单介绍了用于离子束辅助沉积的端部霍尔离子源的工作原理,然后分析了其性能对磁场的要求,据此介绍了磁路组件的设计。最后,采用AN SY S大型有限元分析软件对一个条形的端部霍尔离子源的磁场进行了模拟计算,并与实验结果进行了比较...首先简单介绍了用于离子束辅助沉积的端部霍尔离子源的工作原理,然后分析了其性能对磁场的要求,据此介绍了磁路组件的设计。最后,采用AN SY S大型有限元分析软件对一个条形的端部霍尔离子源的磁场进行了模拟计算,并与实验结果进行了比较,获得了满意的结果。通过对模拟结果的分析,获得了对该离子源磁场分布的直观深入的认识,为具体的端部霍尔离子源的改进设计提供了理论指导。展开更多
文摘Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.
基金Project supported by the National Natural Science Foundation of China(Grant No.61235011)the Science Foundation of the Science and Technology Commission of Tianjin Municipality,China(Grant Nos.13JCYBJC17300 and 12JCQNIC01200)
文摘Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.
文摘首先简单介绍了用于离子束辅助沉积的端部霍尔离子源的工作原理,然后分析了其性能对磁场的要求,据此介绍了磁路组件的设计。最后,采用AN SY S大型有限元分析软件对一个条形的端部霍尔离子源的磁场进行了模拟计算,并与实验结果进行了比较,获得了满意的结果。通过对模拟结果的分析,获得了对该离子源磁场分布的直观深入的认识,为具体的端部霍尔离子源的改进设计提供了理论指导。
