期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Ionized Acceptor Bound Exciton States in Wurtzite GaN/Al_xGa(1-x)N Cylindrical Quantum Dot
1
作者 郑冬梅 王宗箎 《Communications in Theoretical Physics》 SCIE CAS CSCD 2012年第1期151-156,共6页
Based on the framework of the effective-mass approximation, the ionized acceptor bound exciton (A- X) binding energy and the emission wavelength are investigated for a cylindrical wurtzite (WZ) GaN/A1x Ga1-xN quan... Based on the framework of the effective-mass approximation, the ionized acceptor bound exciton (A- X) binding energy and the emission wavelength are investigated for a cylindrical wurtzite (WZ) GaN/A1x Ga1-xN quantum dot (QD) with finite potential barriers by means of a variational method. Numerical results show that the binding energy and the emission wavelength highly depend on the QD size, the position of the ionized acceptor and the Al composition x of the barrier material AIxGal-xN. The binding energy and the emission wavelength are larger when the acceptor is located in the vicinity of the left interface of the QD. In particular, the binding energy of ( A-, X) complex is insensitive to the dot height when the acceptor is located at the left boundary of the QD. The ionized acceptor bound exciton binding energy and the emission wavelength are both increased if Al composition x is increased. 展开更多
关键词 quantum dot ionized acceptor bound exciton binding energy emission wavelength
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部