主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降...主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降(Vdson)的影响,最终得到了满足器件设计要求的最佳性能参数。展开更多
The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input ...The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.展开更多
文摘主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降(Vdson)的影响,最终得到了满足器件设计要求的最佳性能参数。
文摘The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.
