The 5＇-flanking proximal region of stress-induced gene encoding choline monooxygenase （CMO） was isolated by Adaptor-PCR and TAIL-PCR from halophyte Suaeda liaotungensis K. A total of 2,204 bp DNA sequence was obtai...The 5＇-flanking proximal region of stress-induced gene encoding choline monooxygenase （CMO） was isolated by Adaptor-PCR and TAIL-PCR from halophyte Suaeda liaotungensis K. A total of 2,204 bp DNA sequence was obtained. The transcription start site, which is located at 128 bp upstream to the start ATG, was predicted by the TSSP-TCM program. The functional elements were analysed by PLACE program. The obtained SICMO gene promoter contains the basic elements： TATA-box, CAAT-box, and stress-induced elements, for example, salt responsive element （GAAAAA）, cold responsive elements （CANNTG）, ABA （Abscisic Acid） responsive elements （NAACAA）, water stress element （CGGTTG）, and WUN responsive elements （GTTAGGTTC）. Isolation and analysis of the promoter of the CMO gene from S. liaotungensis lays a foundation for characterising the stress-induced promoter elements, studying the relationship between the structure and function of the promoter, and investigating the molecular mechanism of CMO gene regulation.展开更多
Structural and compositional design of core-shell structure is an effective strategy towards enhanced catalysis.Herein,amorphous MnO2 nanosheets and K+-intercalated layered MnO2 nanosheets are controllably assembled o...Structural and compositional design of core-shell structure is an effective strategy towards enhanced catalysis.Herein,amorphous MnO2 nanosheets and K+-intercalated layered MnO2 nanosheets are controllably assembled over Fe2O3 spindles,in which the MnO2 nanosheets are perpendicularly anchored to the surface of Fe2O3.Such a core shell structure contributes to a high specific surface area and abundant pore channels on the surface of catalysts.In addition,the existence of K+provides large numbers of basic sites and restrains the formation of unpleasant(Fe1-xMnx)3O4.Benefiting from the merits in structure and composition,CO adsorption is enhanced and remaining time of intermediates is prolonged on the surfaces of catalysts during the Fischer–Tropsch synthesis(FTS),facilitating to the formation of active iron carbides and C–C coupling reactions.Resultantly,the Fe2O3@K+-Mn O2 shows both a high CO conversion of 82.3%and a high C5+ selectivity of 73.1%.The present study provides structural and compositional rationales on design high-performance catalysts towards FTS.展开更多
The promotional effects of Zr on the structure, reduction, carburization and catalytic behavior of precipitated iron-based Fischer-Tropsch synthesis （FTS） catalysts were investigated. The catalysts were characterize...The promotional effects of Zr on the structure, reduction, carburization and catalytic behavior of precipitated iron-based Fischer-Tropsch synthesis （FTS） catalysts were investigated. The catalysts were characterized by N2 physisorption, temperature-programmed reduction （TPR）, and M6ssbauer effect spectroscopy （MES） techniques. As revealed by N2 physisorption, Zr decreased the BET surface area and pore volume of the catalyst. The results of TPR and MES show that Zr suppresses the reduction and carburization of Fe catalysts because of the interaction between Fe and Zr. The FTS reaction results indicate that Zr decreases the FTS activity of Fe catalysts but improves the catalysts＇ stability. In addition, Zr promoter restraines the formation of light hydrocarbons （methane and C2-C4） and shifts the production distribution to the heavy hydrocarbons.展开更多
采用相图计算(CALPHAD:Calculation of phase diagrams)方法对Zr-X(X=Li,Na,K,Sc,Hf)5个二元体系进行了相图热力学研究.基于实验数据,通过热力学优化计算获得了一套描述液相及(αZr),(βZr),(Li),(Na),(K),(αSc),(βSc),(αHf)和(βHf...采用相图计算(CALPHAD:Calculation of phase diagrams)方法对Zr-X(X=Li,Na,K,Sc,Hf)5个二元体系进行了相图热力学研究.基于实验数据,通过热力学优化计算获得了一套描述液相及(αZr),(βZr),(Li),(Na),(K),(αSc),(βSc),(αHf)和(βHf)相的热力学参数.Zr-Li,Zr-Na和Zr-K体系中的气相视为理想气体.与实验相图数据对比发现,本文获得的热力学参数能够准确地描述实验相平衡数据.展开更多
In order to investigate the effect of Zr addition on the precipitations of K4169 superalloy, a manual electric arc furnace was used to prepare the superalloy with different Zr addition from 0.03wt.% to 0.07wt%. After ...In order to investigate the effect of Zr addition on the precipitations of K4169 superalloy, a manual electric arc furnace was used to prepare the superalloy with different Zr addition from 0.03wt.% to 0.07wt%. After standard heat treatment and long-time aging, the microstructures of the alloys were observed using XRD, SEM and TEM. The results show that Zr not only inhibits the precipitation of Laves phase at the grain boundary, but also significantly promotes the precipitation of earlobe-like γ＇ and γ＂ phases. After long time aging at 680 ℃ for 500 h, the γ＂ phase grows up obviously and forms a γ＇/γ＂ clad microstructure when the Zr addition is 0.03 wt.%. A large number of fine orbed γ＇ particles precipitate in the grains and some γ＂ phase transforms to disk-like c5 phase when the Zr addition increases to 0.05wt.%. The nano-polycrystalline γ＇ phase precipitates in the grains and there is a little δ phase when the Zr addition is 0.07wt.%. As the Zr addition increases, the amount of Laves phase at the grain boundary decreases at first, and then increases and forms flaky morphology.展开更多
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investig...With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.展开更多
基金This work was supported by the National Natural Sciences Foundation of China (No. 30370806).
文摘The 5＇-flanking proximal region of stress-induced gene encoding choline monooxygenase （CMO） was isolated by Adaptor-PCR and TAIL-PCR from halophyte Suaeda liaotungensis K. A total of 2,204 bp DNA sequence was obtained. The transcription start site, which is located at 128 bp upstream to the start ATG, was predicted by the TSSP-TCM program. The functional elements were analysed by PLACE program. The obtained SICMO gene promoter contains the basic elements： TATA-box, CAAT-box, and stress-induced elements, for example, salt responsive element （GAAAAA）, cold responsive elements （CANNTG）, ABA （Abscisic Acid） responsive elements （NAACAA）, water stress element （CGGTTG）, and WUN responsive elements （GTTAGGTTC）. Isolation and analysis of the promoter of the CMO gene from S. liaotungensis lays a foundation for characterising the stress-induced promoter elements, studying the relationship between the structure and function of the promoter, and investigating the molecular mechanism of CMO gene regulation.
基金funding support from the National Natural Science Foundation of China (51722404, 51674177, 91845113 and 51804221)the “1000-Youth Talents Plan”+3 种基金the Fundamental Research Funds for the Central Universities (2042017kf0200)National Key R&D Program of China (2018YFE0201703)the China Postdoctoral Science Foundation (2018M642906 and 2019T120684)Hubei Provincial Natural Science Foundation of China (2019CFA065)。
文摘Structural and compositional design of core-shell structure is an effective strategy towards enhanced catalysis.Herein,amorphous MnO2 nanosheets and K+-intercalated layered MnO2 nanosheets are controllably assembled over Fe2O3 spindles,in which the MnO2 nanosheets are perpendicularly anchored to the surface of Fe2O3.Such a core shell structure contributes to a high specific surface area and abundant pore channels on the surface of catalysts.In addition,the existence of K+provides large numbers of basic sites and restrains the formation of unpleasant(Fe1-xMnx)3O4.Benefiting from the merits in structure and composition,CO adsorption is enhanced and remaining time of intermediates is prolonged on the surfaces of catalysts during the Fischer–Tropsch synthesis(FTS),facilitating to the formation of active iron carbides and C–C coupling reactions.Resultantly,the Fe2O3@K+-Mn O2 shows both a high CO conversion of 82.3%and a high C5+ selectivity of 73.1%.The present study provides structural and compositional rationales on design high-performance catalysts towards FTS.
文摘The promotional effects of Zr on the structure, reduction, carburization and catalytic behavior of precipitated iron-based Fischer-Tropsch synthesis （FTS） catalysts were investigated. The catalysts were characterized by N2 physisorption, temperature-programmed reduction （TPR）, and M6ssbauer effect spectroscopy （MES） techniques. As revealed by N2 physisorption, Zr decreased the BET surface area and pore volume of the catalyst. The results of TPR and MES show that Zr suppresses the reduction and carburization of Fe catalysts because of the interaction between Fe and Zr. The FTS reaction results indicate that Zr decreases the FTS activity of Fe catalysts but improves the catalysts＇ stability. In addition, Zr promoter restraines the formation of light hydrocarbons （methane and C2-C4） and shifts the production distribution to the heavy hydrocarbons.
文摘采用相图计算(CALPHAD:Calculation of phase diagrams)方法对Zr-X(X=Li,Na,K,Sc,Hf)5个二元体系进行了相图热力学研究.基于实验数据,通过热力学优化计算获得了一套描述液相及(αZr),(βZr),(Li),(Na),(K),(αSc),(βSc),(αHf)和(βHf)相的热力学参数.Zr-Li,Zr-Na和Zr-K体系中的气相视为理想气体.与实验相图数据对比发现,本文获得的热力学参数能够准确地描述实验相平衡数据.
基金financially supported by the Natural Science Foundation of Gansu Province,China (No.3ZS042-B25-028)
文摘In order to investigate the effect of Zr addition on the precipitations of K4169 superalloy, a manual electric arc furnace was used to prepare the superalloy with different Zr addition from 0.03wt.% to 0.07wt%. After standard heat treatment and long-time aging, the microstructures of the alloys were observed using XRD, SEM and TEM. The results show that Zr not only inhibits the precipitation of Laves phase at the grain boundary, but also significantly promotes the precipitation of earlobe-like γ＇ and γ＂ phases. After long time aging at 680 ℃ for 500 h, the γ＂ phase grows up obviously and forms a γ＇/γ＂ clad microstructure when the Zr addition is 0.03 wt.%. A large number of fine orbed γ＇ particles precipitate in the grains and some γ＂ phase transforms to disk-like c5 phase when the Zr addition increases to 0.05wt.%. The nano-polycrystalline γ＇ phase precipitates in the grains and there is a little δ phase when the Zr addition is 0.07wt.%. As the Zr addition increases, the amount of Laves phase at the grain boundary decreases at first, and then increases and forms flaky morphology.
基金the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603)the National Natural Science Foundation of China(Grant No.10674138)the Special Fund for President Scholarship,Chinese Academy of Sciences.
文摘With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.
