片名:变相黑侠K-20:Legend of the Mask导演:佐藤嗣麻子主演:金城武松隆子仲村亨上映日期:2010年3月12日中国对此片情有独钟的人大体上分为两类,一类人冲着金城武去的,另一类则是冲着江户川乱步去的。虽说本片制作还算精良,画面感十足,...片名:变相黑侠K-20:Legend of the Mask导演:佐藤嗣麻子主演:金城武松隆子仲村亨上映日期:2010年3月12日中国对此片情有独钟的人大体上分为两类,一类人冲着金城武去的,另一类则是冲着江户川乱步去的。虽说本片制作还算精良,画面感十足,浓重的"蒸汽"味中掺着大量的特技场面,但总体来说平平淡淡,完全靠那两位大佬级人物为其撑腰。但讽刺的是,帅哥金城武演绎江户川乱步笔下的名侦探,这个化学反应实在是让人大跌眼镜。展开更多
随着中国科学技术和社会经济的快速发展,国家电网建设规模也在不断的扩大,10 k V中压配电网已经越来越难以满足负荷发展的需要,为国家电网的长远发展,必须采取措施优化及改造现有的中压配电网。国外已广泛采用20 k V电压作为新的中压配...随着中国科学技术和社会经济的快速发展,国家电网建设规模也在不断的扩大,10 k V中压配电网已经越来越难以满足负荷发展的需要,为国家电网的长远发展,必须采取措施优化及改造现有的中压配电网。国外已广泛采用20 k V电压作为新的中压配电电压,对于我国采取何种电压等级最优,则需要建立完整的分析模型,从经济性和社会性等角度对我国电网电压等级序列进行论证。通过对国内外电网及电压等级序列发展的充分调研,并结合国家电网的实际情况,提出了中压配电网电压等级优化的方案,然后分别建立电网规模估算模型、投资费用估算模型、占地面积估算模型,将优化方案与现使用的电压等级方案从电网规模、投资费用、占地面积3方面进行比较,得出最优化方案为:500/220/20/0.4 k V.最后依据不同情况,提出了具体的改造方法。建立了3种估算模型,考虑的因素更加全面,而且具有很好的适应性,对相关实践具有较大的意义。展开更多
The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS devices.The characteristics of advanced MGS...The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS devices.The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping layer.The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down.In addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated.Also with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was improved.For greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were optimized.The maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.展开更多
文摘片名:变相黑侠K-20:Legend of the Mask导演:佐藤嗣麻子主演:金城武松隆子仲村亨上映日期:2010年3月12日中国对此片情有独钟的人大体上分为两类,一类人冲着金城武去的,另一类则是冲着江户川乱步去的。虽说本片制作还算精良,画面感十足,浓重的"蒸汽"味中掺着大量的特技场面,但总体来说平平淡淡,完全靠那两位大佬级人物为其撑腰。但讽刺的是,帅哥金城武演绎江户川乱步笔下的名侦探,这个化学反应实在是让人大跌眼镜。
文摘随着中国科学技术和社会经济的快速发展,国家电网建设规模也在不断的扩大,10 k V中压配电网已经越来越难以满足负荷发展的需要,为国家电网的长远发展,必须采取措施优化及改造现有的中压配电网。国外已广泛采用20 k V电压作为新的中压配电电压,对于我国采取何种电压等级最优,则需要建立完整的分析模型,从经济性和社会性等角度对我国电网电压等级序列进行论证。通过对国内外电网及电压等级序列发展的充分调研,并结合国家电网的实际情况,提出了中压配电网电压等级优化的方案,然后分别建立电网规模估算模型、投资费用估算模型、占地面积估算模型,将优化方案与现使用的电压等级方案从电网规模、投资费用、占地面积3方面进行比较,得出最优化方案为:500/220/20/0.4 k V.最后依据不同情况,提出了具体的改造方法。建立了3种估算模型,考虑的因素更加全面,而且具有很好的适应性,对相关实践具有较大的意义。
基金supported by the Ministry of Science and Technology of China(No.2009ZX02035)
文摘The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS devices.The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping layer.The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down.In addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated.Also with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was improved.For greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were optimized.The maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.
