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Macroscopic superlubricity of potassium hydroxide solution achieved by incorporating in-situ released graphene from friction pairs
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作者 Hongyu LIANG Xinjie CHEN +6 位作者 Yongfeng BU Meijuan XU Gang ZHENG Kaixiong GAO Xijun HUA Yonghong FU Junyan ZHANG 《Friction》 SCIE EI CAS CSCD 2023年第4期567-579,共13页
Graphene(G),as a typical two-dimensional material,is often used as an additive for liquid lubricants.However,graphene is mostly added to liquid lubricants in a one-time manner in friction;it mainly exists in the form ... Graphene(G),as a typical two-dimensional material,is often used as an additive for liquid lubricants.However,graphene is mostly added to liquid lubricants in a one-time manner in friction;it mainly exists in the form of multilayer agglomerated structures due to theπ–πstacking between graphene sheets,making it unable to fully exert the synergistic lubrication function.Herein,we propose a new macroscopic superlubric system of graphene/potassium hydroxide(G/KOH)solution;and the graphene additive involved is exfoliated in-situ from graphene/epoxy(G/EP)friction pair by friction,continuously providing freshly-peeled graphene into KOH solution and minimizing the adverse effects of graphene agglomeration.Moreover,the in-situ produced graphene additive has thinner thickness and better anti-aggregation ability,which provide more graphene to accommodate OH−,form more stacked sandwich structures of OH−/graphene/OH−between friction pairs(i.e.,equivalent to a moving pulley block with more wheels),and finally realize superlubricity.This study develops a new liquid superlubric system suitable for alkaline environments,and at the same time proposes a new way to gradually release graphene additives in situ,rather than adding them all at once,deepening the understanding to liquid superlubricity mechanism,and paving the experimental foundation for the practical application of macroscopic superlubricity. 展开更多
关键词 liquid superlubricity concentrated potassium hydroxide(koh)solution in-situ graphene(G)additives stacked sandwich structure electric double layer(EDL) hydrogen bonds(H-bonds)
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A novel oxidation-based wet etching method for AlGaN/GaN heterostructures
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作者 蔡金宝 王金延 +5 位作者 刘洋 徐哲 王茂俊 于民 解冰 吴文刚 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期201-204,共4页
A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxid... A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700℃could be etched off in a homothermal(70℃) KOH solution while the KOH solution had no etching effects on the region of the AlGaN/GaN heterostructure protected by a SiO_2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900℃followed by 30 min treatment in 70℃KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed. 展开更多
关键词 AlGaN/GaN wet etching thermal oxidation koh solution
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