Chemical mechanical polishing (CMP) was used to polish Lithium triborate (LiB3O5 or LBO) crystal. Taguchi method was applied for optimization of the polishing parameters. Material removal rate (MRR) and surface ...Chemical mechanical polishing (CMP) was used to polish Lithium triborate (LiB3O5 or LBO) crystal. Taguchi method was applied for optimization of the polishing parameters. Material removal rate (MRR) and surface roughness are considered as criteria for the optimization. The polishing pressure, the abrasive concentration and the table velocity are important parameters which influence MRR and surface roughness in CMP of LBO crystal. Experiment results indicate that for MRR the polishing pressure is the most significant polishing parameter followed by table velocity; while for the surface roughness, the abrasive concentration is the most important one. For high MRR in CMP of LBO ctystal the optimal conditions are: pressure 620 g/cm^2, concentration 5.0 wt pct, and velocity 60 r/min, respectively. For the best surface roughness the optimal conditions are: pressure 416 g/cm^2, concentration 5.0 wt pct, and velocity 40 r/min, respectively. The contributions of individual parameters for MRR and surface roughness were obtained.展开更多
Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate (LiB3O5 or LBO) crystals using the electron beam evaporation method. Comparing with th...Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate (LiB3O5 or LBO) crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.展开更多
基金supported by the National Natural Science Foundation of China(No.50675104 and 50905086)Six High Talent Fund of Jiangsu Province(No.06-D-024)Talent Fund of NUAA(No.S0782-052)
文摘Chemical mechanical polishing (CMP) was used to polish Lithium triborate (LiB3O5 or LBO) crystal. Taguchi method was applied for optimization of the polishing parameters. Material removal rate (MRR) and surface roughness are considered as criteria for the optimization. The polishing pressure, the abrasive concentration and the table velocity are important parameters which influence MRR and surface roughness in CMP of LBO crystal. Experiment results indicate that for MRR the polishing pressure is the most significant polishing parameter followed by table velocity; while for the surface roughness, the abrasive concentration is the most important one. For high MRR in CMP of LBO ctystal the optimal conditions are: pressure 620 g/cm^2, concentration 5.0 wt pct, and velocity 60 r/min, respectively. For the best surface roughness the optimal conditions are: pressure 416 g/cm^2, concentration 5.0 wt pct, and velocity 40 r/min, respectively. The contributions of individual parameters for MRR and surface roughness were obtained.
基金Fundeded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province(20081030)S&T Plan Project of the Educational Department of Liaoning Province(2008224)
文摘Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate (LiB3O5 or LBO) crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.