An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived...An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.展开更多
In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width(VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific onresi...In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width(VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific onresistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide(SOI) substrate is compared with that of a silicon carbide(SiC) substrate by 3 D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self-heating penalty effectively, alleviating the self heating effect and improving reliability.展开更多
文摘An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.
基金Project supported by the National Natural Science Foundation of China(No.61774052)the Excellent Youth Foundation of Zhejiang Province of China(No.LR17F040001)
文摘In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width(VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific onresistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide(SOI) substrate is compared with that of a silicon carbide(SiC) substrate by 3 D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self-heating penalty effectively, alleviating the self heating effect and improving reliability.
