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Thermal analysis of remote phosphor in LED modules 被引量:1
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作者 董明智 韦嘉 +2 位作者 叶怀宇 袁长安 张国旗 《Journal of Semiconductors》 EI CAS CSCD 2013年第5期38-40,共3页
Phosphor plays an important role in LED packages by converting the wavelength of light and achieving specific color. The property and degradation of phosphor are strongly affected by the temperature. Some structural f... Phosphor plays an important role in LED packages by converting the wavelength of light and achieving specific color. The property and degradation of phosphor are strongly affected by the temperature. Some structural factors have been investigated in this paper and their effects are evaluated. Remote phosphor is an effective approach to improve the performance and reliability of LED modules and products. It is a trade-off that the final product design depends on both the thermal performance and the cost. 展开更多
关键词 led module remote phosphor thermal management
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A review of passive thermal management of LED module
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作者 叶怀宇 Sau Koh +2 位作者 Henk van Zeijl A.W.J.Gielen 张国旗 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第1期57-60,共4页
Recently, the high-brightness LEDs have begun to be designed for illumination application. The increased electrical currents used to drive LEDs lead to thermal issues. Thermal management for LED module is a key design... Recently, the high-brightness LEDs have begun to be designed for illumination application. The increased electrical currents used to drive LEDs lead to thermal issues. Thermal management for LED module is a key design parameter as high operation temperature directly affects their maximum light output, quality, reliability and life time. In this review, only passive thermal solutions used on LED module will be studied. Moreover, new thermal interface materials and passive thermal solutions applied on electronic equipments are discussed which have high potential to enhance the thermal performance of LED Module. 展开更多
关键词 HB leds led module thermal management passive thermal solution thermal interface material
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GaN-based LEDs for light communication 被引量:1
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作者 LiXia Zhao ShiChao Zhu +4 位作者 ChunHui Wu Chao Yang ZhiGuo Yu Hua Yang Lei Liu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2016年第10期1-10,共10页
Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current pr... Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles.Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs. 展开更多
关键词 GaN-based leds modulation bandwidth carrier concentration radiative recombination coefficient
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