A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relat...A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p+-n junction,even in p+ anode.The results s how for the first time,helium ions,which stop in the p+ anode,also contribute to the forward voltage drop increasing and turn-off time reducing.展开更多
提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ...提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。展开更多
A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well an...A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.展开更多
文摘A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p+-n junction,even in p+ anode.The results s how for the first time,helium ions,which stop in the p+ anode,also contribute to the forward voltage drop increasing and turn-off time reducing.
文摘提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376080 and 61674027)the Natural Science Foundation of Guangdong Province,China(Grant Nos.2014A030313736 and 2016A030311022)
文摘A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored （CS） layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the cartier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop （Von）. In the off-state, due to the uniform carder distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss （Eoff）. Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V.
