Gd thin films with different thickness （about 10 nm and 0.5 nm） were deposited on Si（100） by laser molecular beam epitaxy （LMBE）. Thickness dependence of the initial oxidation behaviors of Gd films was studied b...Gd thin films with different thickness （about 10 nm and 0.5 nm） were deposited on Si（100） by laser molecular beam epitaxy （LMBE）. Thickness dependence of the initial oxidation behaviors of Gd films was studied based on the in situ X-ray photoelectron spectroscopy （XPS） and ultraviolet photoelectron spectroscopy （UPS） analysis under ultra-high vacuum （UHV） condition. When the thin film is around 10 urn, the XPS results show that Gd is extremely reactive with oxygen forming Gd oxides and the oxides of Gd are easily hygroscopic. The UPS results show that the Gd 4fhas a double-peak structure and the double-peak structure of Gd 4fevolves into a single-peak feature after exposing to air. When the thickness of the Gd film decreases to about 0.5 urn, the reactivity of Gd film with oxygen is decreased by the diffusion of Si component into Gd layers based on the XPS and UPS results. It is suggested that the silicon atoms segregate at the grain boundaries of Gd film to form a barrier, which block the further diffusion of oxygen and water vapor into the Gd layers.展开更多
Znl_xCoxO （x = 0.05） thin films are deposited on sapphire （0001） substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features a...Znl_xCoxO （x = 0.05） thin films are deposited on sapphire （0001） substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent α, root mean square （RMS） roughness w and autocorrelation length ~ are calculated and the surface parameters are preliminarily analyzed. The values of ~ vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing Ts from 300 to 400 °C, and then decreases when Ts is 500 °C. The autocorrelation length ~ decreases monotonously with the increase in Ts from 300 to 500 °C, which indicates that the increase in Ts restrains the spread of the surface fluctuations until Ts is higher than 400 °C.展开更多
基金Funded by the Key Laboratory of National Defense Science and Technology(No.9140c6806080c68)
文摘Gd thin films with different thickness （about 10 nm and 0.5 nm） were deposited on Si（100） by laser molecular beam epitaxy （LMBE）. Thickness dependence of the initial oxidation behaviors of Gd films was studied based on the in situ X-ray photoelectron spectroscopy （XPS） and ultraviolet photoelectron spectroscopy （UPS） analysis under ultra-high vacuum （UHV） condition. When the thin film is around 10 urn, the XPS results show that Gd is extremely reactive with oxygen forming Gd oxides and the oxides of Gd are easily hygroscopic. The UPS results show that the Gd 4fhas a double-peak structure and the double-peak structure of Gd 4fevolves into a single-peak feature after exposing to air. When the thickness of the Gd film decreases to about 0.5 urn, the reactivity of Gd film with oxygen is decreased by the diffusion of Si component into Gd layers based on the XPS and UPS results. It is suggested that the silicon atoms segregate at the grain boundaries of Gd film to form a barrier, which block the further diffusion of oxygen and water vapor into the Gd layers.
基金National Natural Science Foundation of China(No.50372083)the Knowledge Innovation Program of the Chinese A-cademy of Sciences(No.072C201301)the graduate student innovation program of the Chinese academy of sciences
基金support from the National Natural Science Foundation of China under Grant No.10974122Shandong Provincial Natural Science Foundation under Grant No.ZR2009FZ006support of Open Project Foundation under Grant No.KLSMS-1005 and No.KLSMS-0908 from Key Laboratory of Semiconductor Materials Science of Chinese Academy of Sciences
文摘Znl_xCoxO （x = 0.05） thin films are deposited on sapphire （0001） substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent α, root mean square （RMS） roughness w and autocorrelation length ~ are calculated and the surface parameters are preliminarily analyzed. The values of ~ vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing Ts from 300 to 400 °C, and then decreases when Ts is 500 °C. The autocorrelation length ~ decreases monotonously with the increase in Ts from 300 to 500 °C, which indicates that the increase in Ts restrains the spread of the surface fluctuations until Ts is higher than 400 °C.
