A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact ...A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.展开更多
A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two t...A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters.Some suggestions are given for the design of a DLL based RF CMOS oscillators.展开更多
设计了一种可用于X频段的射频微机电系统(RF-MEMS)的开关。它通过上电极中心以及两端的螺旋结构提高了等效电感值,减小了谐振频率,从而在较低的频段下实现了较好的隔离度。采用阻抗匹配改善开关结构的射频性能。利用Ansoft HFSS软件仿...设计了一种可用于X频段的射频微机电系统(RF-MEMS)的开关。它通过上电极中心以及两端的螺旋结构提高了等效电感值,减小了谐振频率,从而在较低的频段下实现了较好的隔离度。采用阻抗匹配改善开关结构的射频性能。利用Ansoft HFSS软件仿真分析了开关关键结构参数对电磁性能的影响,包括绝缘介质层厚度k,上电极与下电极之间空气层厚度o、上电极宽度w和上电极间距m,总结了各参数对电磁性能的影响趋势,确定了各参数的最优取值。在整个X频段,开关开态时的插入损耗小于0.83 d B(绝对值,下同);关态时的隔离度大于18.5d B。在中心频率10 GHz的插入损耗为0.57 d B,隔离度为30.65 d B。展开更多
文摘A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.
文摘A research on the spurious tones due to the current mismatch in charge pumps of DLL(Delay Locked Loop) based RF CMOS oscillators is performed.An equation for strength evaluation of the spurious tones is derived.Two tables are provided to make it obvious to understand for the characteristics of spurious tones changing with related parameters.Some suggestions are given for the design of a DLL based RF CMOS oscillators.
文摘设计了一种可用于X频段的射频微机电系统(RF-MEMS)的开关。它通过上电极中心以及两端的螺旋结构提高了等效电感值,减小了谐振频率,从而在较低的频段下实现了较好的隔离度。采用阻抗匹配改善开关结构的射频性能。利用Ansoft HFSS软件仿真分析了开关关键结构参数对电磁性能的影响,包括绝缘介质层厚度k,上电极与下电极之间空气层厚度o、上电极宽度w和上电极间距m,总结了各参数对电磁性能的影响趋势,确定了各参数的最优取值。在整个X频段,开关开态时的插入损耗小于0.83 d B(绝对值,下同);关态时的隔离度大于18.5d B。在中心频率10 GHz的插入损耗为0.57 d B,隔离度为30.65 d B。
