InAsSb alloys are grown on n-（100） GaSb （Te-doped） and GaAs substrates by the MOCVD using TMIn, TMSb,and AsH3 sources. The influence of growth parameters such as temperature, Ⅴ/Ⅲ ratio,and buffer layer on the su...InAsSb alloys are grown on n-（100） GaSb （Te-doped） and GaAs substrates by the MOCVD using TMIn, TMSb,and AsH3 sources. The influence of growth parameters such as temperature, Ⅴ/Ⅲ ratio,and buffer layer on the surface morphology and solid composition is studied. The surface morphology is observed by AFM and SEM. The As and Sb concentrations in the solid are characterized by electron microprobe analysis. The crystalline quality of the InAsSb epilayer is characterized by double-crystal X-ray rocking curve diffraction. The electrical properties are observed by the （Van der Pauw） Hall technique at room temperature. An InAsSb epitaxy layer with mirror-like surface and lattice mismatch of 0.4% is obtained.展开更多
利用 MOCVD系统在 Al2 O3衬底上生长 In Ga N材料和 In Ga N/ Ga N量子阱结构材料。研究发现 ,In Ga N材料中 In组份几乎不受 TMG与 TMI的流量比的影响 ,而只与生长温度有关 ,生长温度由 80 0℃降低到 74 0℃ ,In组份的从 0 .2 2增加到 ...利用 MOCVD系统在 Al2 O3衬底上生长 In Ga N材料和 In Ga N/ Ga N量子阱结构材料。研究发现 ,In Ga N材料中 In组份几乎不受 TMG与 TMI的流量比的影响 ,而只与生长温度有关 ,生长温度由 80 0℃降低到 74 0℃ ,In组份的从 0 .2 2增加到 0 .4 5 ;室温 In Ga N光致发光光谱 (PL)峰全半高宽 (FWH M)为 15 .5 nm;In Ga N/ Ga N量子阱区 In Ga N的厚度 2 nm,但光荧光的强度与 10 0 nm厚 In Ga N的体材料相当。展开更多
文摘InAsSb alloys are grown on n-（100） GaSb （Te-doped） and GaAs substrates by the MOCVD using TMIn, TMSb,and AsH3 sources. The influence of growth parameters such as temperature, Ⅴ/Ⅲ ratio,and buffer layer on the surface morphology and solid composition is studied. The surface morphology is observed by AFM and SEM. The As and Sb concentrations in the solid are characterized by electron microprobe analysis. The crystalline quality of the InAsSb epilayer is characterized by double-crystal X-ray rocking curve diffraction. The electrical properties are observed by the （Van der Pauw） Hall technique at room temperature. An InAsSb epitaxy layer with mirror-like surface and lattice mismatch of 0.4% is obtained.
文摘利用 MOCVD系统在 Al2 O3衬底上生长 In Ga N材料和 In Ga N/ Ga N量子阱结构材料。研究发现 ,In Ga N材料中 In组份几乎不受 TMG与 TMI的流量比的影响 ,而只与生长温度有关 ,生长温度由 80 0℃降低到 74 0℃ ,In组份的从 0 .2 2增加到 0 .4 5 ;室温 In Ga N光致发光光谱 (PL)峰全半高宽 (FWH M)为 15 .5 nm;In Ga N/ Ga N量子阱区 In Ga N的厚度 2 nm,但光荧光的强度与 10 0 nm厚 In Ga N的体材料相当。
