Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light e...Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.展开更多
Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red...Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.展开更多
Using a color-tunable organic light-emitting diode (CT-OLED) can accord with the circadian cycle of humans and realize healthy lighting. The variation range of the correlated color temperature (CCT) is an important pa...Using a color-tunable organic light-emitting diode (CT-OLED) can accord with the circadian cycle of humans and realize healthy lighting. The variation range of the correlated color temperature (CCT) is an important parameter to measure the performance of CT-OLEDs. In this paper, the effect of changing the utilization of phosphorescent materials and the position of the recombination zone (RZ) in the device are investigated by changing the thickness of the emissive layer (EML) and the doping ratio of the host and guest materials. The results show that reducing the red phosphorescent material and improving the blue phosphorescent material can affect the change direction of CCT, but it is not enough to expand the span of CCT (ΔCCT). It is more conducive to improving ΔCCT by more reasonable regulation of the position of the main RZ in EML and the energy transfer from the blue sub-EML to the red sub-EML. Device D obtains the best electro-optic and spectral characteristics, in which the maximum ΔCCT is 5746 K (2661 - 8407 K) as the voltage changes from 3.75 V to 9.75 V, the maximum current efficiency and luminance reach 18.34 cd·A<sup>-1</sup> and 12,100 cd·m<sup>-2</sup>, respectively.展开更多
Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materia...Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.展开更多
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relat...Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.展开更多
Electroluminescence （EL） characteristics have been studied for a hybrid tandem white organic light emitting diode （OLED） with a blue emitting fluorescent EL1 unit based on BCzVBi and a yellow emitting phosphoresce...Electroluminescence （EL） characteristics have been studied for a hybrid tandem white organic light emitting diode （OLED） with a blue emitting fluorescent EL1 unit based on BCzVBi and a yellow emitting phosphorescent EL2 unit based on （fbi）2Ir（acac）, where a MoO3 layer is inserted between EL1 and EL2 units as charge generation layer （CGL）. Maximum current and power efficiencies of 68.1 cd/A and 29.2 lm/W were obtained, respectively, while the current and power efficiencies at luminance of 1000 cd/m2 were 68.0 cd/A and 24.6 lm/W. The yellow emission appears from about 4.5 V firstly, while the blue emission starts to appear from about 5.4 V. It was found that charge generation from CGL of MoO3/NPB bilayer occurred at high voltages of above 5.4 V but not at low voltages below 5.2 V.展开更多
Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with...Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with multiple identical emissive units and using buffer-modified C_(60)/pentacene organic semiconductor heterojunction(OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A^(-1) at 30 mA ·cm^(-2) can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs_2CO_3/Al is an effective buffer for C_(60)/pentacene-based tandem OLEDs.展开更多
Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is invest...Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.展开更多
The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based ...The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.展开更多
During the last two decades, III-nitride-based quantum dots(QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview o...During the last two decades, III-nitride-based quantum dots(QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes(LEDs), QD infrared photodetectors(QDIPs) and QD intermediate band(QDIB) solar cells(SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.展开更多
There has been an increasing demand for high-performance and cost-effective organic electron-transport materials for organic light-emitting diodes(OLEDs).In this contribution,we present a simple compound 3-(3-(4,6-dip...There has been an increasing demand for high-performance and cost-effective organic electron-transport materials for organic light-emitting diodes(OLEDs).In this contribution,we present a simple compound 3-(3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-1,10-phenanthroline through the facile Pd-catalyzed coupling of a triphenyltriazine boronic ester with 3-bromo-1,10-phenanthroline.It shows a high T_g of 112°C.The ultraviolet photoelectron spectroscopy measurements reveal a deep HOMO level of -6.5 eV.The LUMO level is derived as-3.0 eV,based on the optical bandgap.The low-temperature solid-state phosphorescent spectrum gives a triplet energy of ~2.36 eV.n-Doping with8-hydroxyquinolatolithium(Liq,1:1)leads to considerably improved electron mobility of 5.2×10^(-6)–5.8×10^(-5)cm^2V^(-1)s^(-1)at E=(2–5)-10~5V cm^(-1),in contrast with the triarylphosphine oxidephenantroline molecular conjugate we reported previously.It has been shown that through optimizing the device structure and hence suppressing polaron-exciton annihilation,introducing this single Liq-doped electron-transport layer could offer high-efficiency and stable phosphorescent OLEDs.展开更多
基金Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003)Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085)+2 种基金Ningbo 3315 Programme (Grant No.2020A-01-B)YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B)Zhujiang Talent Programme (Grant No.2016LJ06C621)。
文摘Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.
基金This work was supported by the National Natural Science Foundation of China(51775199,51735004)Natural Science Foundation of Guangdong Province(2018B030306008)the Fundamental Research Funds for the Central Universities.
文摘Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.
文摘Using a color-tunable organic light-emitting diode (CT-OLED) can accord with the circadian cycle of humans and realize healthy lighting. The variation range of the correlated color temperature (CCT) is an important parameter to measure the performance of CT-OLEDs. In this paper, the effect of changing the utilization of phosphorescent materials and the position of the recombination zone (RZ) in the device are investigated by changing the thickness of the emissive layer (EML) and the doping ratio of the host and guest materials. The results show that reducing the red phosphorescent material and improving the blue phosphorescent material can affect the change direction of CCT, but it is not enough to expand the span of CCT (ΔCCT). It is more conducive to improving ΔCCT by more reasonable regulation of the position of the main RZ in EML and the energy transfer from the blue sub-EML to the red sub-EML. Device D obtains the best electro-optic and spectral characteristics, in which the maximum ΔCCT is 5746 K (2661 - 8407 K) as the voltage changes from 3.75 V to 9.75 V, the maximum current efficiency and luminance reach 18.34 cd·A<sup>-1</sup> and 12,100 cd·m<sup>-2</sup>, respectively.
基金Research funding from the Shanghai Municipal Education Commission in the framework of the oriental scholar and distinguished professor designationfunding from the National Natural Science Foundation of China(NSFC)
文摘Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.
文摘Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.
文摘Electroluminescence （EL） characteristics have been studied for a hybrid tandem white organic light emitting diode （OLED） with a blue emitting fluorescent EL1 unit based on BCzVBi and a yellow emitting phosphorescent EL2 unit based on （fbi）2Ir（acac）, where a MoO3 layer is inserted between EL1 and EL2 units as charge generation layer （CGL）. Maximum current and power efficiencies of 68.1 cd/A and 29.2 lm/W were obtained, respectively, while the current and power efficiencies at luminance of 1000 cd/m2 were 68.0 cd/A and 24.6 lm/W. The yellow emission appears from about 4.5 V firstly, while the blue emission starts to appear from about 5.4 V. It was found that charge generation from CGL of MoO3/NPB bilayer occurred at high voltages of above 5.4 V but not at low voltages below 5.2 V.
基金supported by the National Nature Science Foundation of China(No.61604027)the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission(Nos.KJ1400411 and KJ1600439),the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission(No.KJ1500404)+1 种基金the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications(No.A2013-39)the Basic and Advanced Technology Research Project of Chongqing Municipality(No.cstc2016jcyA 1923)
文摘Buffer-modified C_(60)/pentacene as charge generation layer(CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes(OLEDs) with multiple identical emissive units and using buffer-modified C_(60)/pentacene organic semiconductor heterojunction(OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A^(-1) at 30 mA ·cm^(-2) can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs_2CO_3/Al is an effective buffer for C_(60)/pentacene-based tandem OLEDs.
基金Supported by the Hunan Province Natural Science Foundation of China under Grant No 06JJ20034.
文摘Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.
文摘The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.
文摘During the last two decades, III-nitride-based quantum dots(QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes(LEDs), QD infrared photodetectors(QDIPs) and QD intermediate band(QDIB) solar cells(SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.
基金supported by the National Key R&D Program of China(2016YFB0400701)NSFC-Guangdong Joint Program(U1301243)+1 种基金the National Basic Research Program of China(2015CB655000)support of Dongguan Major Special Project(2017215117010)
文摘There has been an increasing demand for high-performance and cost-effective organic electron-transport materials for organic light-emitting diodes(OLEDs).In this contribution,we present a simple compound 3-(3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-1,10-phenanthroline through the facile Pd-catalyzed coupling of a triphenyltriazine boronic ester with 3-bromo-1,10-phenanthroline.It shows a high T_g of 112°C.The ultraviolet photoelectron spectroscopy measurements reveal a deep HOMO level of -6.5 eV.The LUMO level is derived as-3.0 eV,based on the optical bandgap.The low-temperature solid-state phosphorescent spectrum gives a triplet energy of ~2.36 eV.n-Doping with8-hydroxyquinolatolithium(Liq,1:1)leads to considerably improved electron mobility of 5.2×10^(-6)–5.8×10^(-5)cm^2V^(-1)s^(-1)at E=(2–5)-10~5V cm^(-1),in contrast with the triarylphosphine oxidephenantroline molecular conjugate we reported previously.It has been shown that through optimizing the device structure and hence suppressing polaron-exciton annihilation,introducing this single Liq-doped electron-transport layer could offer high-efficiency and stable phosphorescent OLEDs.
