The Bi3＋ doped molybdate-based red-emitting phosphors, LiEu1-xBix（MoO4）2, were successfully synthesized with a sol-gel method. The prepared LiEu1-xBix（MoO4）2 phosphors exhibited pure and intense red emission at 6...The Bi3＋ doped molybdate-based red-emitting phosphors, LiEu1-xBix（MoO4）2, were successfully synthesized with a sol-gel method. The prepared LiEu1-xBix（MoO4）2 phosphors exhibited pure and intense red emission at 613 nm under the excitation of near-UV 394 nm. It was discussed in detail that the influence of the synthesis conditions such as the doping concentration of Bi3, the dose of citric acid, pH of the precursor solution and the sintering temperature on the emission intensity of the phosphors. According to the results, the optimal condition was obtained： the doping concentration of Bi3＋ was 15 mol.%, molar ratio of citric acid to metal ions was 1.5：1, pH of the precursor solution was 1.0 and the sintering temperature was 800 ℃. The X-ray diffraction （XRD） patterns of the LiEuo.85Bi0.15（MoO4）2 phosphor prepared under the optimal condition indicated that the phosphor was single phase with tetragonal scheelite structure. The Commission Intemationale de I＇E- clairage （CIE） chromaticity coordinates of LiEuo.85Bio.15（MoO4）2 were （x=0.655, y=0.345）, which were closer to the national television stan- dard committee （NTSC） standard values （x=0.670, y=0.330） than that of a commercial red phosphor of Y202S：Eu3＋（x=0.630, y=0.350）. This LiEuo.85Bi0As（MoO4）2 red phosphor is a promising candidate for the fabrication of white light-emitting diode （W-LED） with near-UV chips.展开更多
A series of novel red phosphors LiEu1-xYx(WO4)0.5(MoO4)1.5 (x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.8) were synthesized by conventional solid state reaction method with the starting materials: WO3, MoO3, Eu2O3, Li2CO3 an...A series of novel red phosphors LiEu1-xYx(WO4)0.5(MoO4)1.5 (x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.8) were synthesized by conventional solid state reaction method with the starting materials: WO3, MoO3, Eu2O3, Li2CO3 and Y2O3. The spectrum and the crystal structure of the phosphors were characterized by F-4500 and XRD respectively. Meanwhile the effects of flux and Y3+ concentration on the crystal structure and luminescent properties of the phosphors were investigated. The results showed that the optimal content of flux (WAlF3/WH3BO3=1/1) was 1 wt% and the optimal doping concentration of Y3+ was 0.5 mol. The emission spectrum showed the most intense peak was located at 615 nm, which corresponds to the 5D0→7F2 transition of Eu3+ and that Eu3+ occupied the lattice site of noncentrosymmetric environment in the scheelite phases. The excitation spectrum displayed that these phosphors could be effectively excited by ultraviolet (UV) (396 nm) and blue (466 nm) light, nicely in correspondence with the widely ap- plied output wavelengths of ultraviolet or blue LED chips. The influence of flux on the luminescent properties of LiEu0.5Y0.5(WO4)0.5(MoO4)1.5 phosphor was analyzed. The XRD spectra indicated that the flux could help to crystallize the phosphor, and no other phases were formed except the tetragonal. When adding flux, the relative intensity of LiEu0.5Y0.5(WO4)0.5(MoO4)1.5 became much stronger and the average particle size of the phosphor decreased.展开更多
A series of LiY1-xEux（MoO4）2 red-emitting phosphors were synthesized by sol-gel technique. The phase impurity and spectroscopic properties were characterized by X-ray diffraction （XRD） and photo-luminescence （PL...A series of LiY1-xEux（MoO4）2 red-emitting phosphors were synthesized by sol-gel technique. The phase impurity and spectroscopic properties were characterized by X-ray diffraction （XRD） and photo-luminescence （PL） spectra respectively. The effect of Eu3＋ doping concentration, annealing temperature and the molar ratio of citric acid to the total metal cations （C：M） on the optical properties of the red phosphors were studied and optimized. It was found that all the samples could be excited efficiently by blue light （465 nm）, which was well coincident with the emission of GaN based LED chips. The luminescent intensity reached maximum when annealing temperature was 750 ℃ and Eu3＋ doping concentration was 5% with C：M=3：1.展开更多
基金Project supported by National Natural Science Foundation of China (NSFC20803097, NSFC20603049)Natural Science Foundation of Chongqing (CSTC2011AB4056, CSTC2009BA4023)the Fundamental Research Funds for the Central Universities (CDJZR10220005 and CDJRC10220002)
文摘The Bi3＋ doped molybdate-based red-emitting phosphors, LiEu1-xBix（MoO4）2, were successfully synthesized with a sol-gel method. The prepared LiEu1-xBix（MoO4）2 phosphors exhibited pure and intense red emission at 613 nm under the excitation of near-UV 394 nm. It was discussed in detail that the influence of the synthesis conditions such as the doping concentration of Bi3, the dose of citric acid, pH of the precursor solution and the sintering temperature on the emission intensity of the phosphors. According to the results, the optimal condition was obtained： the doping concentration of Bi3＋ was 15 mol.%, molar ratio of citric acid to metal ions was 1.5：1, pH of the precursor solution was 1.0 and the sintering temperature was 800 ℃. The X-ray diffraction （XRD） patterns of the LiEuo.85Bi0.15（MoO4）2 phosphor prepared under the optimal condition indicated that the phosphor was single phase with tetragonal scheelite structure. The Commission Intemationale de I＇E- clairage （CIE） chromaticity coordinates of LiEuo.85Bio.15（MoO4）2 were （x=0.655, y=0.345）, which were closer to the national television stan- dard committee （NTSC） standard values （x=0.670, y=0.330） than that of a commercial red phosphor of Y202S：Eu3＋（x=0.630, y=0.350）. This LiEuo.85Bi0As（MoO4）2 red phosphor is a promising candidate for the fabrication of white light-emitting diode （W-LED） with near-UV chips.
基金Supported by the Key Programs for Science and Technology Development of Hubei Province(Grant No.2005AA105A05)
文摘A series of novel red phosphors LiEu1-xYx(WO4)0.5(MoO4)1.5 (x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.8) were synthesized by conventional solid state reaction method with the starting materials: WO3, MoO3, Eu2O3, Li2CO3 and Y2O3. The spectrum and the crystal structure of the phosphors were characterized by F-4500 and XRD respectively. Meanwhile the effects of flux and Y3+ concentration on the crystal structure and luminescent properties of the phosphors were investigated. The results showed that the optimal content of flux (WAlF3/WH3BO3=1/1) was 1 wt% and the optimal doping concentration of Y3+ was 0.5 mol. The emission spectrum showed the most intense peak was located at 615 nm, which corresponds to the 5D0→7F2 transition of Eu3+ and that Eu3+ occupied the lattice site of noncentrosymmetric environment in the scheelite phases. The excitation spectrum displayed that these phosphors could be effectively excited by ultraviolet (UV) (396 nm) and blue (466 nm) light, nicely in correspondence with the widely ap- plied output wavelengths of ultraviolet or blue LED chips. The influence of flux on the luminescent properties of LiEu0.5Y0.5(WO4)0.5(MoO4)1.5 phosphor was analyzed. The XRD spectra indicated that the flux could help to crystallize the phosphor, and no other phases were formed except the tetragonal. When adding flux, the relative intensity of LiEu0.5Y0.5(WO4)0.5(MoO4)1.5 became much stronger and the average particle size of the phosphor decreased.
基金Project supported by National Natural Science Foundation of China (20903123)Key Project of Chinese Ministry of Education (211154)Natural Science Foundation Project of Chongqing (CSTC2010BA4009, KJTD201016 and CSTCjjA50006)
文摘A series of LiY1-xEux（MoO4）2 red-emitting phosphors were synthesized by sol-gel technique. The phase impurity and spectroscopic properties were characterized by X-ray diffraction （XRD） and photo-luminescence （PL） spectra respectively. The effect of Eu3＋ doping concentration, annealing temperature and the molar ratio of citric acid to the total metal cations （C：M） on the optical properties of the red phosphors were studied and optimized. It was found that all the samples could be excited efficiently by blue light （465 nm）, which was well coincident with the emission of GaN based LED chips. The luminescent intensity reached maximum when annealing temperature was 750 ℃ and Eu3＋ doping concentration was 5% with C：M=3：1.
