Photocatalysis is considered to be a clean, green and efficient method to purify water. In this report, we first developed a highly efficient ultrafine TiO2 nanorods/g-C3N4 nanosheets （TiO2 NR/CN NS） composites via ...Photocatalysis is considered to be a clean, green and efficient method to purify water. In this report, we first developed a highly efficient ultrafine TiO2 nanorods/g-C3N4 nanosheets （TiO2 NR/CN NS） composites via a simple hydrothermal method. Tiny TiO2 nanorods （diameter： ～1.5 nm and length： ～8.3 nm） were first loaded in situ on the CN NS by adding graphitic carbon nitride （g-C3N4） to the reaction solution. The TiO2 NR/CN NS composites present high charge separation efficiency and broader light absorbance than P25 TiO2. Furthermore, we illustrate that the TiO2 NR/CN NS catalyst possesses high performance for the photocatalytic degradation of the common and stubborn pollutants in water, such as the rhodamine B （RhB） dye and phenol. Under visible light （λ 〉 420 nm） irradiation, the apparent rate of the TiO2 NR/CN NR is 172 and 41 times higher than that of the P25 TiO2 and TiO2 NR, respectively. Additionally, we speculated that the heterojunction formed between TiO2 NR and CN NS, which is the basis for the experiments we have designed and the corresponding results. We demonstrated that reactive oxidative species such as superoxide anion radical and holes play critical roles in the degradation, and the hydroxyl radical contributes nothing to the degradation.展开更多
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.展开更多
基金supported by the Beijing Municipal High Level Innovative Team Building Program(IDHT20180504)the National Natural Science Foundation of China(21671011)+4 种基金Beijing High Talent ProgramBeijing Natural Science Foundation(KZ201710005002)the Large-scale Instrument and Equipment Platform of Beijing University of TechnologyChina Postdoctoral Science FoundationBeijing Postdoctoral Research Foundation
文摘Photocatalysis is considered to be a clean, green and efficient method to purify water. In this report, we first developed a highly efficient ultrafine TiO2 nanorods/g-C3N4 nanosheets （TiO2 NR/CN NS） composites via a simple hydrothermal method. Tiny TiO2 nanorods （diameter： ～1.5 nm and length： ～8.3 nm） were first loaded in situ on the CN NS by adding graphitic carbon nitride （g-C3N4） to the reaction solution. The TiO2 NR/CN NS composites present high charge separation efficiency and broader light absorbance than P25 TiO2. Furthermore, we illustrate that the TiO2 NR/CN NS catalyst possesses high performance for the photocatalytic degradation of the common and stubborn pollutants in water, such as the rhodamine B （RhB） dye and phenol. Under visible light （λ 〉 420 nm） irradiation, the apparent rate of the TiO2 NR/CN NR is 172 and 41 times higher than that of the P25 TiO2 and TiO2 NR, respectively. Additionally, we speculated that the heterojunction formed between TiO2 NR and CN NS, which is the basis for the experiments we have designed and the corresponding results. We demonstrated that reactive oxidative species such as superoxide anion radical and holes play critical roles in the degradation, and the hydroxyl radical contributes nothing to the degradation.
基金supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003)the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335)+2 种基金the Project(No.9140C140101140C14069)the Innovation Project of GUET Graduate Education(No.YJCXS201529)the National Science&Technology Major Project of China(No.2011ZX02708-003)
文摘The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
