Thermal Analysis of Organic Light Emitting Diodes Based on Basic Heat Transfer Theory

We investigate the thermal characteristics of standard organic light-emitting diodes （OLEDs） using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estimate the device temperature, which is linearly with electrical input power. The simulation results show that there is almost no temperature gradient within the OLED device working under steady state conditions. Furthermore, thermal analysis simulation results show that the surface properties （convective heat transfer coetficient and surface emissivity） of the substrate or cathode can significantly affect the temperature distribution of the OLED.

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Injection modulation of p^+-n emitter junction in 4H-SiC light triggered thyristor by double-deck thin n-base

To overcome hole-injection limitation of p^＋-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two- dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole- injection of p^＋-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n- base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm^2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.

On-line detection system of weld-based rapid prototyping process based on structured light

In order to realize the closed-loop control for rapid prototyping process based on gas metal arc welding, the geometric parameters of weld beads should be detected. In this study, a vision sensor system consisting of a linear laser projector and a CCD camera was designed to collect images of weld beads. Then, an image processing approach which combines with a Gaassian filter and an improved gravity method was used to extract the centerline of a light stripe based on VC ＋＋. Feature points of the centerline were identical directly by means of an image fusion algorithm. Experimental results show that image fusion is an effective approach to measure the width and height of the weld bead with high accuracy. This method can identify beads effectively in multi-pass welding and avoid designing different modes to suit all kinds of shapes.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

Time Dependent Surface Heat Transfer in Light Weight Aggregate Cement Based Materials

Surface temperature changes of building materials affect the calculation of heat flow and thus the energy use in heating and cooling. The surface heat transfer coefficient , limiting the heat flow between material surface and ambient air is normally taken as a constant. In this study we propose a time-dependent function . We estimate from unidirectional heat flow experiments with transient and steady-state conditions. Using temperature measurements and the conservation of energy at the surface including convective and irradiative boundary conditions, the value of was obtained both using Finite Difference and Taylor Polynomials methods. Numerical solutions of temperature distribution as function of time were improved with the obtained -functions compared to with constant . There were no clear difference between on different materials, and the final values observed were in the order of magnitude expected from the literature.

Design and Implementation on the Wind and Light Complementary LED Lighting Controller based on Novel Base Board Packaging Technology

In this paper, we conduct theoretical research on design and implementation on wind and light complementary LED lighting controller based on the novel base board packaging technology. LED, as a kind of device can convert electric power into visible light directly the homomorphism of semiconductor devices, with high efficiency and small energy consumption, good light quality, use safety, long service life, green environmental protection, flexible control as this is common lamps and lanterns is incomparable advantage. Therefore, it is considered to be 21 century of a new generation of lighting source. Based on the superiority of LED, it is widely applied in many fields of lighting. To enhance the traditional solar based pure LED system, we enhance it with the combination of the wind power and the optimized controller that holds specific meaning.

Novel Fluorene-based Conjugated Copolymer Containing Cyclobutenedione Unit for Light Emitting Diodes

A novel fluorene-based conjugated copolymer containing cyclobutenedione unit was synthesized by Suzuki reaction. Its structure and properties were characterized by FTIR, 1HNMR, elemental analysis, PL spectroscopy, DSC, TGA and cyclic voltammetry. The resulting polymer shows strong yellow PL emission (561 nm) and good solubility in polar aprotic solvents, i.e. THF, DMF, DMAC, DMSO, etc. DSC and TGA studies reveal that the novel polymer possesses excellent thermal stability with high glass transition temperature of 127℃ and onset decomposition temperature of 411℃. Cyclic voltammetry measurement demonstrated that the polymer has both hole and electron-transporting property.

Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.

Neurochip Based on Light-addressable Potentiometric Sensor

<正>A novel neurochip based on light addressable potentiometric sensor (LAPS) is designed.Using its light addressable characteristic.The problems of the limitations of restricted discrete active sites of current neurochips,such as microelectrode array and field effect transistor array can be settled easily.Based on the theoretical analysis of the interface between cells and LAPS,spontaneously discharges of hippocampal neurons induced by Mg~ 2+)-free media treatment were recorded by LAPS.The results demonstrate that this kind of neurochip has potential to monitor electrophysiology of cultured cells in a non-invasive way.

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells （QWs） when the InGaN/GaN multilayer barriers are used.

Heat Resistant Fluorenone-based Polyimines as Novel Light-emitting Polymers

Fluorenone-based polyamines, as novel light-emitting polymers, were synthesized by the condensation polymerization of 3,6-dibromo-9-fluorenone with different aromatic diamines by palladiumcatalyzed aryl amination reaction. The structures of the polymers were characterized by means of FT-IR, 1H NMR spectroscopy and elemental analysis. The experimental results show a good agreement with the proposed structures. TGA measurement exhibits that the polymers possess good thermal stabilities with high decomposition temperatures（T5 400 ℃）. Due to the photo-induced intramolecular charge-transfer（ICT） of fluorenone-based polyimines, these polymers show significantly strong photonic luminescence in N,Ndimethylacetamide.

Hole-Buffer Material Derived from Pyrene, Schiff Base and Tris to Enhance Emission Efficiency of Polymer Light-Emitting Diodes

Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.

Review of Directly Producing Light Olefins via CO Hydrogenation

Directly making light olefins via CO hydrogenation is a promising process toobtain a non-petroleum based supply of alkenes. Limited by the ASF distribution function ofFischer-Tropsch synthesis, the yield of light olefins (C_2-C_4) can not reach the desired levels,which is a great challenge to overcome. Beginning with a brief introduction of F-T synthesis, thispaper provides a review of current research, including thermodynamic analysis, the ASF distributionfunction, the reaction performance of CO hydrogenation and slurry reactor studies. The problemscurrently faced by this research area are presented at the end of the article.

Rare Earth Metals in Light Alloys

A review of crystallochemical thermodynamic and phase diagram data of Mg RE and Al RE based systems is presented. On the basis also of their possible applications, special attention is given to the Mg rich and Al rich alloys and to the effects of rare earth additions on their properties. A summary of the experimental work carried out by our research group on several binary and ternary alloys is reported: that is Mg RE, Al RE, and Mg RE RE′ and Al RE RE′ with two different rare earth metals. A number of regularities observed in the formation and in the crystallochemistry of binary and ternary Mg rich or Al rich phases are summarised and discussed. Their application to a fine planning of alloys having a well defined structure is suggested.

Effects of Light and Heavy Rare Earths on Anti-Degradation of Nodular Cast Iron

The effects of rare earths with different contents on anti-degradation of Y base heavy rare earths-magnesium and cerium base light rare earths-magnesium nodular cast iron were studied. Curves of the relationship between the spheroidization grade of liguid iron treated by different nodulizers and holding time were obtained. The results show that the more the remains of the rare earth, the longer the anti-degradation time, the liquid iron was treated either by Y-Mg-Si or by Ce-Mg-Si nodulizer. When the rare earth remains are above certain quantity, the spheroidization grade starts to decline. When liquid iron treated by either Y-Mg-Si or Ce-Mg-Si nodulizer with proper remains of rare earths about 0.04% 0.06%（mass fraction）, the anti-degradation is the best, and the remains of Mg being about 0.04% -0.07% （mass fraction）. Rare earths-Mg nodulizer with moderate RE remains is better than that of Mg-Si nodulizer in anti-degradation property. However, Y-Mg-Si nodulizer with moderate remins of Re is better than Ce-Mg-Si nodulizer. Sometimes Ce-Mg- Si nodulizer can be used for the production of heavy section nodular cast iron.

Construction of 2D Zn‐MOF/BiVO_(4)S‐scheme heterojunction for efficient photocatalytic CO_(2) conversion under visible light irradiation

The construction of S‐scheme heterojunction photocatalysts has been regarded as an effective avenue to facilitate the conversion of solar energy to fuel.However,there are still considerable challenges with regard to efficient charge transfer,the abundance of catalytic sites,and extended light absorption.Herein,an S‐scheme heterojunction of 2D/2D zinc porphyrin‐based metal‐organic frameworks/BiVO_(4)nanosheets(Zn‐MOF/BVON)was fabricated for efficient photocatalytic CO_(2)conversion.The optimal one shows a 22‐fold photoactivity enhancement when compared to the previously reported BiVO4 nanoflake(ca.15 nm),and even exhibits~2‐time improvement than the traditional g‐C3N4/BiVO4 heterojunction.The excellent photoactivities are ascribed to the strengthened S‐scheme charge transfer and separation,promoted CO_(2)activation by the well‐dispersed metal nodes Zn_(2)(COO)_(4)in the Zn‐MOF,and extended visible light response range based on the results of the electrochemical reduction,electron paramagnetic resonance,and in‐situ diffuse reflectance infrared Fourier transform spectroscopy.The dimension‐matched Zn‐MOF/BVON S‐scheme heterojunction endowed with highly efficient charge separation and abundant catalytic active sites contributed to the superior CO2 conversion.This study offers a facile strategy for constructing S‐scheme heterojunctions involving porphyrin‐based MOFs for solar fuel production.

On the potential to predetermine dominant tree species based on sparse-density airborne laser scanning data for improving subsequent predictions of species-specific timber volumes

Background： Tree species recognition is the main bottleneck in remote sensing based inventories aiming to produce an input for species-specific growth and yield models. We hypothesized that a stratification of the target data according to the dominant species could improve the subsequent predictions of species-specific attributes in particular in study areas strongly dominated by certain species. Methods： We tested this hypothesis and an operational potential to improve the predictions of timber volumes, stratified to Scots pine, Norway spruce and deciduous trees, in a conifer forest dominated by the pine species. We derived predictor features from airborne laser scanning （ALS） data and used Most Similar Neighbor （MSN） and Seemingly Unrelated Regression （SUR） as examples of non-parametric and parametric prediction methods, respectively Results： The relationships between the ALS features and the volumes of the aforementioned species were considerably different depending on the dominant species. Incorporating the observed dominant species inthe predictions improved the root mean squared errors by 13.3-16.4 % and 12.6-28.9 % based on MSN and SUR, respectively, depending on the species. Predicting the dominant species based on a linear discriminant analysis had an overall accuracy of only 76 % at best, which degraded the accuracies of the predicted volumes. Consequently, the predictions that did not consider the dominant species were more accurate than those refined with the predicted species. The MSN method gave slightly better results than models fitted with SUR. Conclusions： According to our results, incorporating information on the dominant species has a clear potential to improve the subsequent predictions of species-specific forest attributes. Determining the dominant species based solely on ALS data is deemed challenging, but important in particular in areas where the species composition is otherwise seemingly homogeneous except being dominated by certain species.