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Observation of oscillations in the transport for atomic layer MoS_2
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作者 解晓强 彭英姿 +2 位作者 郑奇烨 李源 陈吉 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期602-606,共5页
In our experiment, an atomic layer MoS2structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appear... In our experiment, an atomic layer MoS2structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at ~10~7 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed. 展开更多
关键词 atomic-layer MoS2 oscillations in the transport circular polarized light photo-excited carriers
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