Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius ...Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius 〈rA〉, the structure of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） targets transit from the rhombohedral phase to the orthorhombic phase, and the Curie temperature reduces rapidly with the decrease of 〈rA〉. The electrical properties show that films are the metallic state which can be fitted to the formula： ρ（T）=ρ0 ＋ ρ1T^2 ＋ ρ2T^4.5 at low temperatures. The temperature range of the ferromagnetic metallic state becomes narrow with the decrease of 〈rA〉. The phenomenon can be explained by the lattice effect.展开更多
The electrical resistance in zero magnetic field and magnetoresistance in different external magnetic fields have been measured in a temperature range of 77-300 K. It is found that the temperature dependence of magnet...The electrical resistance in zero magnetic field and magnetoresistance in different external magnetic fields have been measured in a temperature range of 77-300 K. It is found that the temperature dependence of magnetoresistance can be well described by a phenomenological formula of ρ(T)=(1σ(T)= (1α(M/M s) 2+βexp(-E 0/k BT), where the fitting parameters α,β vary as the external magnetic field H changes, E 0 is the activation energy, E 0/k B =1160 K, M s is the saturation magnetization, the temperature and magnetic field dependence of M/M s is obtained by the mean-field expression.展开更多
Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It...Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.展开更多
Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried...Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried out in the field range of 0 - 8 T. It is found that p(H) obeys the following relations: when the temperature(T) is higher than the Curie temperature Tc, ρ ( H ) =1/α(T)+β(T)H2; below Tc, ρ ( H ) = ρ0 ( T ) 1/A(T)+B(T)exp(H/C(Y)),and ρ(H) =1/κa(T)+γ(T)H when T is far below TC. It is Suggested that the negative magnetoresistive effect is mainly due to enhancement of the magnetoconductance.展开更多
基金the National Natural Science Foundation of China under grant No.50572088Xi'an University of Science Technology Breeding Foundation No.200737.
文摘Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius 〈rA〉, the structure of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） targets transit from the rhombohedral phase to the orthorhombic phase, and the Curie temperature reduces rapidly with the decrease of 〈rA〉. The electrical properties show that films are the metallic state which can be fitted to the formula： ρ（T）=ρ0 ＋ ρ1T^2 ＋ ρ2T^4.5 at low temperatures. The temperature range of the ferromagnetic metallic state becomes narrow with the decrease of 〈rA〉. The phenomenon can be explained by the lattice effect.
文摘The electrical resistance in zero magnetic field and magnetoresistance in different external magnetic fields have been measured in a temperature range of 77-300 K. It is found that the temperature dependence of magnetoresistance can be well described by a phenomenological formula of ρ(T)=(1σ(T)= (1α(M/M s) 2+βexp(-E 0/k BT), where the fitting parameters α,β vary as the external magnetic field H changes, E 0 is the activation energy, E 0/k B =1160 K, M s is the saturation magnetization, the temperature and magnetic field dependence of M/M s is obtained by the mean-field expression.
基金supported by the National Natural Science Foundation of China.
文摘Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.
基金Project supported by the National Natural Science Foundation of China (Grant No. 19504012) the Chinese Academy of Sciences
文摘Epitaxial La2/3Ca1/3 MnO3 thin films were prepared on NdGaO3(110) substrates by d. c. magnetron sputtering method. The measurements of magnetoresistance ρ(H) upon magnetic field at different temperatures were carried out in the field range of 0 - 8 T. It is found that p(H) obeys the following relations: when the temperature(T) is higher than the Curie temperature Tc, ρ ( H ) =1/α(T)+β(T)H2; below Tc, ρ ( H ) = ρ0 ( T ) 1/A(T)+B(T)exp(H/C(Y)),and ρ(H) =1/κa(T)+γ(T)H when T is far below TC. It is Suggested that the negative magnetoresistive effect is mainly due to enhancement of the magnetoconductance.
