Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmions in synthetic antiferromagnetic(SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density.Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin–orbit torque, the skyrmion Hall effect, skyrmion–skyrmion repulsion, and skyrmion–edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.

Thermal spin molecular logic gates modulated by an electric field

Logic gates are fundamental structural components in all modern digital electronic devices. Here, nonequilibrium Green's functions are incorporated with the density functional theory to verify the thermal spin transport features of the single-molecule spintronic devices constructed by a single molecule in series or parallel connected with graphene nanoribbons electrodes. Our calculations demonstrate that the electric field can manipulate the spin-polarized current. Then, a complete set of thermal spin molecular logic gates are proposed, including AND, OR, and NOT gates. The mentioned logic gates enable different designs of complex thermal spin molecular logic functions and facilitate the electric field control of thermal spin molecular devices.

Controllable all-optical stochastic logic gates and their delay storages based on the cascaded VCSELs with optical-injection

Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers（VCSELs） with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing（NOT,AND,NAND,XOR,XNOR,OR,NOR） in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities.

Simple and Fast Scheme for Realizing Quantum Logic Gates in an Ion Trap

We propose a simple and fast scheme to realize a controlled-NOT gate between two trapped ions using a resonant laser pulse. Our scheme allows the Rabi frequency of the laser field to be of the order of the vibrational frequency and thus the time required to complete the operation is greatly shortened, which is of importance in view of decoherence.

Quantum logic gates operation using SQUID qubits in bimodal cavity

We present a scheme to realize the basic two-qubit logic gates such as the quantum phase gate and SWAP gate using a detuned microwave cavity interacting with three-level superconducting-quantum-interference-device （SQUID） qubit（s）, by placing SQUID（s） in a two-mode microwave cavity and using adiabatic passage methods. In this scheme, the two logical states of the qubit are represented by the two lowest levels of the SQUID, and the cavity fields are treated as quantized. Compared with the previous method, the complex procedures of adjusting tile level spacing of the SQUID and applying the resonant microwave pulse to the SQUID to create transformation are not required. Based on superconducting device with relatively long decoherence time and simplified operation procedure, the gates operate at a high speed, which is important in view of decoherence.

Theoretical design of thermal spin molecular logic gates by using a combinational molecular junction

Based on the density functional theory combined with the nonequilibrium Green function methodology,we have studied the thermally-driven spin-dependent transport properties of a combinational molecular junction consisting of a planar four-coordinate Fe molecule and a 15,16-dinitrile dihydropyrene/cyclophanediene molecule,with single-walled carbon nanotube bridge and electrode.Our results show that the magnetic field and light can effectively regulate the thermallydriven spin-dependent currents.Perfect thermal spin-filtering effect and good thermal switching effect are realized.The results are explained by the Fermi-Dirac distribution function,the spin-resolved transmission spectra,the spatial distribution of molecular projected self-consistent Hamiltonian orbitals,and the spin-resolved current spectra.On the basis of these thermally-driven spin-dependent transport properties,we have further designed three basic thermal spin molecular AND,OR,and NOT gates.

Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes

The idea of replacing traditional silicon-based electronic components with the ones assembled by organic molecules to further scale down the electric circuits has been attracting extensive research focuses.Among the molecularly assembled components,the design of molecular logic gates with simple structure and high Boolean computing speed remains a great challenge.Here,by using the state-of-the-art nonequilibrium Green’s function theory in conjugation with first-principles method,the spin transport properties of single-molecule junctions comprised of two serially connected transition metal dibenzotetraaza[14]annulenes(TM(DBTAA),TM=Fe,Co)sandwiched between two single-walled carbon nanotube electrodes are theoretically investigated.The numerical results show a close dependence of the spin-resolved current-voltage characteristics on spin configurations between the left and right molecular kernels and the kind of TM atom in TM(DBTAA)molecule.By taking advantage of spin degree of freedom of electrons,NOR or XNOR Boolean logic gates can be realized in Fe(DBTAA)and Co(DBTAA)junctions depending on the definitions of input and output signals.This work proposes a new kind of molecular logic gates and hence is helpful for further miniaturization of the electric circuits.

Scheme for implementing quantum logic gates for two atoms trapped in different cavities

A scheme is presented for realizing quantum logic gates for two atoms localized in two distant optical cavities. Our scheme works in a regime in which the atom-cavity coupling strength is smaller than the cavity decay rate. Thus the requirement on the quality factor of the cavities is greatly relaxed. Furthermore, the fidelity of our scheme is not affected by detection inefficiency and atomic decay. These advantages are important in view of experiment.

All-atomristor logic gates

The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance.Here,by studying band structures and electron transport properties of MoS2 atomristor,a comprehensive memristive mechanism is obtained.Guided by the simulation results,monolayer MoS2 with moderated defect concentration has been fabricated in the experiment,which can build atomristors with high performance and good consistency.Based on this,for the first time,MoS2 all-atomristor logic gates are realized successfully.As a demonstration,a half-adder based on the logic gates and a binary neural network(BNN)based on crossbar arrays are evaluated,indicating the applicability in various logic computing circumstances.Owing to shorter transition time and lower energy consumption,all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.

All-optical logic gates based on hierarchical photonic crystal modulated photoluminescence of perovskite nanocrystals

Halide perovskites exhibit high performance in all sorts of optoelectronic and photonic areas, suggesting their huge potential in integrated photonic devices. However, until now, all optical logic gates based on perovskites are still rarely explored, hindering the development of all-optical networks and computing. Herein, a new concept of all-optical logic gates is proposed based on the modulation of photoluminescence(PL) from perovskite nanocrystals(PNCs). A hierarchical photonic crystal(Hie PhC) is developed by self-assembling polystyrene(PS) and SiO2nanoparticles, which exhibit a higher PL enhancement than that of a monolayer PhC. Moreover, the light-controlled PL is realized by taking advantage of the high thermal response of the PL from PNCs/Hie PhC on polyethylene(PE) substrate, assisted by a graphene layer for light-heat conversion. Consequently, optical diode and triode are achieved based on the modulated PL, which exhibit contrast ratios(CR) of 24.7 and 74.0 dB, respectively.All-optical logic gates, including “AND”, “OR” and “NOT”, are realized based on the optical diode and triode.

Metal−Organic Framework-Based Ultrafast Logic Gates for High-Security Optical Encryption

Optical logic gates call for materials with giant optical nonlinearity to break the current performance bottleneck.Metal–organic frameworks(MOFs)provide an intriguing route to achieve superior optical nonlinearity benefitting from structural diversity and design flexibility.However,the potential of MOFs for optoelectronics has been largely overlooked and their applications in optical logic have not been exploited.Here,through temporally manipulating the nonlinear optical absorption process in porphyrin-based MOFs,we have successfully developed AND and XOR logic gates with an ultrafast speed approaching 1 THz and an on–off ratio above 90%.On this basis,all-optical information encryption is further demonstrated using transmittance as primary codes,which shows vast prospects in avoiding the disclosure of security information.To the best of our knowledge,this is the first exploration of MOFs for applications in ultrafast optical logic devices and information encryption.

All-optical reconfigurable multi-logic gates based on nonlinear polarization rotation effect in a single SOA

We demonstrate an all-optical reconfigurable logic gate based on dominant nonlinear polarization rotation accompanied with cross-gain modulation effect in a single semiconductor optical amplifier （SOA）.Five logic functions,including NOT,OR,NOR,AND,and NAND,are realized using 10-Gb/s on-off keying signals with flexible wavelength tunability.The operation principle is explained in detail.By adjusting polarization controllers,multiple logic functions corresponding to different input polarization states are separately achieved using a single SOA with high flexibility.

Design of Optical Logic Gates Using Self-collimated Beams in 2D Photonic Crystal

Optical logic gates are elementary components for optical network and optical computing. In this paper, we propose a structure for AND, NAND, XNOR and NOR logic gates in the two dimensional photonic crystal which utilizes the dispersion based self-collimation effect. The self-collimated beam is splitted by the line defect and interfered with other self-collimated beam. This interference may be constructive or destructive based on their phase difference. This phenomenon is employed to realize all-optical logic gates. The gates are demonstrated numerically by computing electromagnetic field distribution using the finite difference time domain （FDTD） method. The results ensure that this design can function as AND, NAND, XNOR and NOR logic gates. The size of the structure is about 10 μm× 10 μm which in turn results in an increase in the speed and all the gates are realized in the same configuration. The ON-OFF contrast ratio is about 6 dB.

Liquid phase exfoliated boron nanosheets for all-optical modulation and logic gates

Boron nanosheets possess unique photoelectric properties, including photosensitivity, photoresponse,and optical nonlinearity. In this article, we show the interaction between light and boron nanosheets in which concentric rings formed in the far field, which attributed to the strong Kerr nonlinearity of boron nanosheets. Furthermore, the distortion, regulation and relationship between the Kerr nonlinearity and effective mass or carrier mobility of the diffraction rings of boron nanosheets have been investigated.Our work shows that the spatial self-phase modulation effect of boron nanosheets is indeed caused by nonlocal electronic coherence. In addition, we have implemented all-light modulation and all-light logic gates based on the prepared boron nanosheets. We believe that our results will provide a powerful demonstration of nonlinear photonic devices based on boron nanosheets and a reference for photonic devices based on two-dimensional materials.

Design of multiplex logic gates:combining regulation of DNA structure with logical calculation

In this paper,we proposed a facile and accurate way for controlling multiplex fluorescent logic gates through changing the exciting and the observing wavelengths.As proof-of-principle,a Pb2+-specific DNAzyme probe and a thymine(T)-rich DNA probe were introduced to a double-stranded(ds-)DNA.The addition style of the two ions served as the four inputs by changing the distance of the three fluorophores,6-carboxyfluorescein(FAM),ALEXA 532(ALEXA)and carboxytetramethylrhodamine(TAMRA),all of which were modified on the dsDNA probe.Compared with the previous methods,the present approach needed neither different inputs nor the change of sequence of the probe to achieve multiplex logic gates.Furthermore,the modularity of the strategy may allow it to be extended to other types of logic gates.

Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

In this paper, we propose a novel construction of silicon nanowire （SiNW） negative-AND （NAND） logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.

Function-lock strategy in OR/NOR optical logic gates based on cross-polarization modulation effect in semiconductor optical amplifier

We have studied a function-lock strategy for all-optical logic gate （AOLG） utilizing the cross-polarization modulation （CPM） effect in a semiconductor optical amplifier （SOA）. By monitoring the power of logic light, the strategy realized controllable methods to capture OR and NOR functions and switch between them. The strategy has been successfully applied in experiment with 10-Gb/s not-return-to-zero （NRZ） signals, which has a high success-rate above 95% and ensures the high extinction ratio of result light above 11.4 dB. Every step in the strategy has definite numeric evaluation, which provides the potential of automatic implementation.

Universal quantum logic gates in decoherence-free subspace with atoms trapped in distant cavities

We propose a scheme for implementation of a universal set of quantum logic gates in decoherence-free subspace with atoms trapped in distant cavities connected by optical fibers.The selective dispersive couplings between the ground states and the first-excited states of the atom-cavity-fiber system produce a state-dependent Stark shift,which can be used to implement nonlocal phase gates between two logic qubits.The single-logic-qubit quantum gates are achieved by the local two-atom collision and the Stark shift of a single atom.During all the logic operations,the logic qubits remain in decoherence-free subspace and thus the operation is immune to collective dephasing.

All-optical AND/OR/NOT logic gates based on photonic crystal ring resonators

Photonic crystal based ring resonators are best choice for designing all-optical devices. In this paper, we used a basic structure of photonic crystal ring resonators and designed all optical logic gates which are working using the Kerr effect. The proposed gates consisted of upper and lower wavegnides coupled through a resonator which was designed for dropping of special wavelength. The resonance wavelength was designed for 1550 nm telecom operation wavelength. We used numerical meth- ods such as plane wave expansion and finite difference time domain （FDTD） for performing our simulations and studied the optical properties of the proposed structures. Our results showed that the critical input power for triggering the gate output was lower compared to previously reported gates.

AND molecular logic gates based on host-guest complexation operational in live cells

We report supramolecular AND logic gates based on host-guest complexation between acid-labile acyclic cucurbit[n]uril(CB[n]) molecular container and Na Cl O-responsive dye. Supramolecular AND logic gate is turned on due to acid-triggered degradation of molecular container and the release of the dye, followed by Na Cl O-induced fluorescence “switch on” effect of the dye. The reason for AND molecular logic gate is discovered to be the combination of oxidation inhibition and fluorescence “switch off” effect. Supramolecular AND logic gate is confirmed to be operational in live MCF-7 and He La cancer cells.