Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

Carbon materials with quasi-graphene layers:The dielectric,percolation properties and the electronic transport mechanism

We investigate the dielectric properties of multi-walled carbon nanotubes（MWCNTs） and graphite filling in SiO2 with the filling concentration of 2-20 wt.% in the frequency range of 10 ^2-10^ 7 Hz.MWCNTs and graphite have general electrical properties and percolation phenomena owing to their quasi-structure made up of graphene layers.Both permittivity ε and conductivity σ exhibit jumps around the percolation threshold.Variations of dielectric properties of the composites are in agreement with the percolation theory.All the percolation phenomena are determined by hopping and migrating electrons,which are attributed to the special electronic transport mechanism of the fillers in the composites.However,the twin-percolation phenomenon exists when the concentration of MWCNTs is between 5-10 wt.% and 15-20 wt.% in the MWCNTs/SiO2 composites,while in the graphite/SiO2 composites,there is only one percolation phenomenon in the graphite concentration of 10-15 wt.%.The unique twin-percolation phenomenon of MWCNTs/SiO2 is described and attributed to the electronic transfer mechanism,especially the network effect of MWCNTs in the composites.The network formation plays an essential role in determining the second percolation threshold of MWCNTs/SiO2.

A novel power UMOSFET with a variable K dielectric layer

A novel split-gate power UMOSFET with a variable K dielectric layer is proposed. This device shows a 36.2% reduction in the specific on=state resistance at a breakdown voltage of 115 V, as compared with the SGE-UMOS device. Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg × RON and BV^2/RON, as compared with the previous power UMOSFET.

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.

Electromagnetic Oscillations in a Spherical Conducting Cavity with Dielectric Layers. Application to Linear Accelerators

We present an analysis of electromagnetic oscillations in a spherical conducting cavity filled concentrically with either dielectric or vacuum layers. The fields are given analytically, and the resonant frequency is determined numerically. An important special case of a spherical conducting cavity with a smaller dielectric sphere at its center is treated in more detail. By numerically integrating the equations of motion we demonstrate that the transverse electric oscillations in such cavity can be used to accelerate strongly relativistic electrons. The electron’s trajectory is assumed to be nearly tangential to the dielectric sphere. We demonstrate that the interaction of such electrons with the oscillating magnetic field deflects their trajectory from a straight line only slightly. The Q factor of such a resonator only depends on losses in the dielectric. For existing ultra low loss dielectrics, Q can be three orders of magnitude better than obtained in existing cylindrical cavities.

Increasing the Transmission Power by Use of an Antireflecting Dielectric Layer in Microwave Therapy

Reflection and transmission of the plane electromagnetic waves at a frequencyof 2450 MHz at normal incidence on the body surface are studied according to electro-magnetic theory.Our results showed that only 43% electromagnetic energy can penetrateinto the body tissues and 57% electromagnetic energy is reflected back to the air.Thenthe concept of input wave impedance is introduced to study how to decrease the energy re-flection coefficient of the plane electromagnetic waves incident vertically upon the three-layer model of the tissues (skin-fat-muscle).Our results showed that provided the thick-nesses of the skin and fat layers are given,we can evaluate theoretically the thickness andrelative permittivity of the dielectric layer which could raise the energy transmission coef-ficient of the incident waves to 99.99%.

Dielectric layer-dependent surface plasmon effect of metallic nanoparticles on silicon substrate

The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of dielectric layers with different thicknesses leads to the varied resonance wavelength and scattering cross section and consequently the shifted photocurrent response for all wavelengths. These different behaviours are determined by whether the dielectric layer is beyond the domain where the elcetric field of metallic plasmons takes effect, combined with the effect of geometrical optics. It is revealed that for particles of a certain size, an appropriate dielectric thickness is desirable to achieve the best absorption. For a certain thickness of spacer, an appropriate granular size is also desirable. These observations have substantial applications for the optimization of surface plasmon enhanced silicon solar cells.

Selective synthesis of three-dimensional ZnO@Ag/SiO2@Ag nanorod arrays as surface-enhanced Raman scattering substrates with tunable interior dielectric layer

We describe the synthesis of three-dimensional(3D) multilayer ZnO@Ag/SiO2@Ag nanorod arrays by the physico–chemical method. The surface-enhanced Raman scattering(SERS) performance of the 3D multilayer Zn O@Ag/SiO2@Ag nanorod arrays is studied by varying the thickness of dielectric layer SiO2 and outer-layer noble Ag. The 3D Zn O@Ag/SiO2@Ag nanorod arrays create a huge number of SERS "hot spots" that mainly contribute to the high SERS sensitivity. The great enhancement of SERS results from the electron transfer between ZnO and Ag and different electromagnetic enhancements of Ag nanoparticles(NPs) with different thicknesses. Through the finite-difference time-domain(FDTD) theoretical simulation, the enhancement of SERS signal can be ascribed to a strong electric field enhancement produced in the 3D framework. The simplicity and generality of our method offer great advantages for further understanding the SERS mechanism induced by the surface plasmon resonance(SPR) effect.

Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.

Approximate Electromagnetic Cloaking of a Dielectric Sphere Using Homogeneous Isotropic Multi-Layered Materials

In cloaking, a body is hidden from detection by surrounding it by a coating consisting of an unusual anisotropic nonhomogeneous material. The permittivity and permeability of such a cloak are determined by the coordinate transformation of compressing a hidden body into a point or a line. The radially-dependent spherical cloaking shell can be approximately discretized into many homogeneous anisotropic layers;each anisotropic layer can be replaced by a pair of equivalent isotropic sub-layers, where the effective medium approximation is used to find the parameters of these two equivalent sub-layers. In this work, the scattering properties of cloaked dielectric sphere is investigated using a combination of approximate cloaking, where the dielectric sphere is transformed into a small sphere rather than to a point, together with discretizing the cloaking material using pairs of homogeneous isotropic sub-layers. The back-scattering normalized radar cross section, the scattering patterns are studied and the total scattering cross section against the frequency for different number of layers and transformed radius.

Designing high k dielectric films with LiPON-Al_(2)O_(3)hybrid structure by atomic layer deposition

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency response.Here,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid structure.The Li PON thin film is periodically stacked in the Al_(2)O_(3) matrix.This hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in frequency.The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) matrix.This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

Impacts of Temperature and Frequency on the Dielectric Properties for Insight into the Nature of the Charge Transports in the Tl2S Layered Single Crystals

Investigation of the electric properties of semi-conducting materials in an applied ac electric fields gives information about the nature of charge transport and localized states in the forbidden gap. Layered crystals usually contain structural defects, such as dislocations and vacancies that may form a high density of localized states near the Fermi level. So, the current study was carried out for insight into the dielectric Properties of Tl2S layered single crystals. These properties were studied using the ac measurements in the low temperatures ranging from 77 to 300 K. The real part of dielectric constant ε?, imaginary part of dielectric constant ε?, the dissipation factor tan δ and the alternating current conductivity σac were measured in an applied ac electric field of frequencies extending from 2.5 to 50 kHz. Based on the dependencies of these dielectric parameters on both the frequency and temperature, the dielectric properties of the crystals under investigation were elucidated and analyzed. The ac conductivity was found to obey the power law σac(ω) = Aωs with which the values of the exponent s were evaluated to be less than unity in the range 0.21 ≥ s ≥ 0.19. Furthermore, it was found that the temperature dependence of ac conductivity follows the Arrhenius relation via which the impact of temperature on the electrical processes in an applied ac electric field was illustrated and analyzed. The influences of temperature and frequency on both the exponent s and band gap were also discussed in this investigation.

Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

Study on Microcavity Organic Light-emitting Devices Containing Negative Refractive Index Dielectric Layer

A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the experiment, the transfer matrix method is adopted. The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail. Compared with the electroluminescence spectra of non-NRIDL diodes, the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance. The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.

ANALYSIS OF RECTANGULAR MICROSTRIP PATCH ANTENNA COVERED WITH N-DIELECTRIC LAYERS

A generalized spectral Green’s function formulation of N-layer substrate structure is given with three dimension sources, which is a set of closed form formulas. A full-wave analysis model for rectangular microstrip antennas covered with N-dielectric layers has been established by using the above spectral Green’s function. The unknown surface current density on the niicrostrip patch for such structure is found as a solution of an integral equation. The input VSWR and radiation patterns of the antenna are also obtained. The numerical results have been verified by the experimental results.

Anisotropy Characteristics of Magnetostatic Surface Wave Propagating in YIG/Dielectric/Metal Layered Structure

The anisotropy of magnetostatic surface wave （MSSW） propagating in finite width YIG /dielectric/metal layered structure is analyzed. This problem is solved by finding the rigorous solution of each layer from Maxwell equation and the appropriate transmission Green＇s function matrix G. From the relationship of Green＇s function matrixes of dielectric layer and ferrite layer, the dispersion equation is obtained. The MSSW filter is designed to verify the dispersion characteristics. The experiment results are in good agreement with the calculating data from the model.

Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

Organic semiconductor single crystals(OSSCs) have shown their promising potential in high-performance organic field-effect transistors(OFETs). The interfacial dielectric layers are critical in these OFETs as they not only govern the key semiconductor/dielectric interface quality but also determine the growth of OSSCs by their wetting properties. However, reported interfacial dielectric layers either need rigorous preparation processes, rely on certain surface chemistry reactions, or exhibit poor solvent resistance, which limits their applications in low-cost, large-area, monolithic fabrication of OSSC-based OFETs. In this work, polyethylene(PE) thin films and lamellar single crystals are utilized as the interfacial dielectric layers, providing solvent resistive but wettable surfaces that facilitate the crystallization of 6,13-bis(tri-isopropylsilylethynyl)pentacene(TIPS-PEN) and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene(TIPS-TAP). As evidenced by the presence of ambipolar behavior in TIPS-PEN single crystals and the high electron mobility(2.3 ± 0.34 cm^(2)V^(-1)s^(-1)) in TIPS-TAP single crystals, a general improvement on electron transport with PE interfacial dielectric layers is revealed, which likely associates with the chemically inertness of the saturated C-H bonds. With the advantages in both processing and device operation, the PE interfacial dielectric layer potentially offers a monolithic way for the enhancement of electron transport in solution-processed OSSC-based OFETs.

Synthesis of Large-Sized van der Waals Layered MoO_(3)Single Crystals with Improved Dielectric Performance

The applications of two-dimensional semiconductors strictly require the reliable integration of ultrathin high-κdielectric materials on the semiconductor surface to enable fine gate control and low power consumption.As layered oxide materials,MoO_(3)can be potentially used as a high-κtwo-dimensional material with a larger bandgap and high electron affinity.In this work,relying on the oxidization of molybdenum chlorides,we have synthesizedα-MoO_(3)single crystals,which can be easily exfoliated into flakes with thicknesses of a few nanometers and sizes of hundreds of micrometers and fine thermal stability.Based on measurement results of conventional metal/insulator/metal devices and graphene based dual-gate devices,the as-received MoO_(3)nanosheets exhibit improved dielectric performance,including high dielectric constants and competitive breakdown field strength.Our work demonstrates that MoO_(3)with improved crystalline quality is a promising candidate for dielectric materials with a large gate capacitance in future electronics based on two-dimensional materials.

Effective dielectric constant model of electromagnetic backscattering from stratified air–sea surface film–sea water medium

Studies of surface film medium on the sea surface are carried out in this paper for developing the technology to automatically detect and classify sea surface films, and an effective dielectric constant model of electromagnetic backscattering from a stratified air–ocean interface. Numerical results of the new model show the characteristics of effective dielectric constants for the air–sea surface film–sea water medium as follows. The effective dielectric constants decrease with increasing relative dielectric constants of the sea surface films. The effective dielectric constants decrease in horizontal polarization（abbr. HH polarization） and increase in VV vertical polarization（abbr. VV polarization） with increasing radar incident angle. Effective dielectric constants vary with relative sea surface film thickness as a cosinusoidal function of sea surface film thickness. Effective dielectric constant of VV polarization is larger than that of HH polarization. Two potential applications are found with our model, i.e., the retrieval of dielectric constants from the sea surface film, and the film thickness retrieval with our model. Our model has a highly significant influence on improving the technology related to the remote sensing of sea surface films.