Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes（LEDs） is important for optimizing the LED illumination design. Indium gallium aluminium phosphide（InGaAlP）-based thin-film surface-mounted device（SMD） LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum（Al） packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster（thermal transient tester） and TeraL ED（thermal and radiometric characterization of power LEDs） systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.

Robust YAG:Ce single crystal for ultra-high efficiency laser lighting

At present,solid-state laser-driven lighting fabricated with blue laser diode(LD)and phosphor has been greatly developed in high-power lighting applications.The major obstacle is the luminescence saturation threshold of the fluorescence conversion material(YAG:Ce).In this work,we successfully prepared a series of high-quality and robust YAG:Ce single crystals.With high quantum efficiency(QE=92%),regular crystal structure and high thermal conductivity,the single-crystal has excellent ability to deal with high radiation flux and thermal accumulation generated by high power.Matching the single-crystal with the laser,the luminous efficiency up to 274 lm/W and saturation threshold of 12 W/mm^(2) were obtained.In addition,the influence of Ce doping concentration and sample processing conditions on the indicators in laser-driven white lighting was systematically studied.The results are of great significance and are believed to promote the development of solid-state laser-driven lighting.

Aggregation-induced emission:Red and near-infrared organic light-emitting diodes

Red and near-infrared(NIR)organic light-emitting diodes(OLED)have gained remarkable interest due to their numerous applications.However,the construction of highly emissive emitters is hampered by the energy-gap law and aggregation-caused quenching(ACQ)effect.Whereas,aggregationinduced emission(AIE)materials could avoid the undesirable ACQ effect and emit bright light in aggregated state,which is one class of the most promising materials to fabricate high-performance OLED with a high external quantum efficiency and low efficiency roll-off.This review summarizes recent advances in red and NIR OLED with AIE property,including the traditional fluorescence,thermally activated delayed fluorescence,and hybridized local and charge transfer compounds.Meanwhile,the emphasis attention is paid to the molecular design principles,as well as the molecular structure-photophysical characteristics.We also briefly further outlook the challenges and perspective of red and NIR AIE luminogens.

Unidirectionally aligned bright quantum rods films,using T-shape ligands,for LCD application

Unidirectionally aligned nanorods(NRs)are of great importance for different applications,including displays,lighting,and photodetectors.Recently,many alignment techniques were studied to align quantum rods(QRs).However,the brightness of these films,due to the limited concentration of aligned quantum rods in the film,is not enough for their implementation as brightness enhancement films(BEFs)in displays.This can be ascribed to the poor miscibility of quantum rods in polymer and strong concentration dependence of the polarized emission.The ligands of NR are very important for the alignment and brightness.In this article,we proposed a ligand combination comprising T-shape promesogenic phosphonic acid,which on being photoaligned provides mutually parallel alignment of the quantum rods.The T-shape ligands enable the fabrication of hybrid films with a QRs concentration as high as 10 wt.%–20 wt.%retaining high brightness and luminescence polarization property.Later,we used these films in the in-plane switching(IPS)display backlight that shows the color gamut up to 121%of national television system committee(NTSC)(CIE1931),liquid-crystal display(LCD)efficiency up to 7.9%,power efficacy 103±2 nits/W,and the high brightness of~550±10 nits.Thus,the proposed ligands can be used for the alignment of a variety of nanorods.