This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can b...This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.展开更多
This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain regions.Firstly,...This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain regions.Firstly, with SILVACO TCAD device simulation, the drain–source current as a function of the gate–source voltage is calculated and the dependence of the drain–source current on the drain–source voltage in the case of different gate–source voltages for the device with a 0.62 m gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 m and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously.展开更多
Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was fabricated.The gate dielectric Al_2O_3 was formed by natur...Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was fabricated.The gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 V.The DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 V.With the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.展开更多
文摘This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.
基金supported by the Young Fund of the National Natural Science Foundation of China(No.11104226)the Ph D Start-Up Fund(No.11zx7132)
文摘This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain regions.Firstly, with SILVACO TCAD device simulation, the drain–source current as a function of the gate–source voltage is calculated and the dependence of the drain–source current on the drain–source voltage in the case of different gate–source voltages for the device with a 0.62 m gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 m and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously.
文摘Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was fabricated.The gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 V.The DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 V.With the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.
