In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application

High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm^2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm^2/V·s is determined, which indicates a strong potential for Hall applications.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As（001） substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition（LP-MOCVD） system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum（358 arc sec） of the（004） ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition

Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （[Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.

1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors （mHEMTs） grown on GaAs substrate by metal organic chemical vapour deposition （MOCVD） are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- ram. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6, Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION

Metalization is widely used in integrated circuit devices to connect millions of devices together. The success of metallization depends strongly on diffusion barrier technology, due to the interactions of metals with surrounding materials. As device dimension further shrinks, diffusion barrier technology is facing more challenges and opening up new opportunities, particularly for chemical vapor deposition (CVD) process technology. CVD is attracting increased attention in advanced metallization mainly due to its capability in producing conformal thin films. In this review, we will focus our discussion on CVD processes for three most important classes of diffusion barriers: Ti, W and Ta-based diffusion banters. Examples from current literature will be examined.

Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.

Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Chromium Doped Zinc Oxide Thin Film for Gas Sensing Applications

Chromium (Cr) doped Zinc oxide ZnO thin films were deposited onto glass substrates by Metal Organic Chemical Vapour Deposition (MOCVD) technique with varying dopant concentration at a temperature of 420°C. The effect of the chromium concentration on morphological, structural, optical, electrical and gas sensing properties of the films were investigated. The scanning electron microscopy results revealed that the Cr concentration has great influence on the crystallinity, surface smoothness and grain size. X-ray diffraction (XRD) studies shows that films were polycrystalline in nature and grown as a hexagonal wurtzite structure. A direct optical band energy gap of 3.32 to 3.10 eV was obtained from the optical measurements. The transmission was found to decrease with increasing Cr doping concentration. Rutherford Backscattering Spectroscopy (RBS) analysis also demonstrates that Cr ions are substitutionally incorporated into ZnO. I-V characteristic of the film shows a resistivity ranges from 1.134 × 10-2 · cm to 1.24 × 10-2 · cm at room temperature. The gas sensing response of the films were enhanced with incorporation of Cr as a dopant with optimum operating temperature around 200°C.