GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle...GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle size of the powder obtained is affected by the deposition temperature, and the fine crystals formed in temperature range 500 similar to 650 degrees C were hexagonal.展开更多
The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(...The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(2) (M = In, R = Et 3,) in 80-90% yield. The molecular structures of complexes 1 and 3 have been established by X-ray crystallography.展开更多
文摘GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle size of the powder obtained is affected by the deposition temperature, and the fine crystals formed in temperature range 500 similar to 650 degrees C were hexagonal.
文摘The reaction of the trialkyl metals (R3M, R = Me, Et; M = Ga, In) with benzo[h]quinolin-10-ol (HO-BQ) in a 1:1 molar ratio gave intramolecular N coordinated complexes R2M-O-BQ (M = Ga, R = Me 1, Et 2) and (R2In-O-BQ)(2) (M = In, R = Et 3,) in 80-90% yield. The molecular structures of complexes 1 and 3 have been established by X-ray crystallography.
