Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（B...Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（BH）,series resistance,and charge carrier density are extracted from the current–voltage（I–V）and the capacitance–voltage（C–V）characteristics.The properties of the MOS diode based on 4%,6% and 8% indium doped tin oxide are largely studied.The Ag/SnO2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped SnO2layer.This was grown onto n-type silicon and metallic（Au）contacts which were made by thermal evaporation under a vacuum@10^-5 Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases（334–534Ω）with the In doping level while the barrier height（BH）remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO2：In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
基金supported by the Algerian Ministry of High Education and Scientific Research through the CNEPRU Project(No.B00L002UN310220130011)the Anvredet Project N°18/DG/2016 “Projet Innovant:Synthèse et Caractérisation de Films Semiconducteurs Nanostructurés et Fabrication de Cellule Solaire”
文摘Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（BH）,series resistance,and charge carrier density are extracted from the current–voltage（I–V）and the capacitance–voltage（C–V）characteristics.The properties of the MOS diode based on 4%,6% and 8% indium doped tin oxide are largely studied.The Ag/SnO2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped SnO2layer.This was grown onto n-type silicon and metallic（Au）contacts which were made by thermal evaporation under a vacuum@10^-5 Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases（334–534Ω）with the In doping level while the barrier height（BH）remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO2：In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
