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注入光敏器件与MOS场效应结构比较
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作者 何民才 黄启俊 王海军 《半导体光电》 CAS CSCD 北大核心 2000年第6期439-441,445,共4页
通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构 。
关键词 光探测器 注入光敏器件 mos场效应结构
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Charge transport and quantum confinement in MoS2 dual-gated transistors
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作者 Fuyou Liao Hongjuan Wang +12 位作者 Xiaojiao Guo Zhongxun Guo Ling Tong Antoine Riaud Yaochen Sheng Lin Chen Qingqing Sun Peng Zhou David Wei Zhang Yang Chai Xiangwei Jiang Yan Liu Wenzhong Bao 《Journal of Semiconductors》 EI CAS CSCD 2020年第7期39-43,共5页
Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate th... Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices.In this work,we investigate the MoS2 field-effect transistors(FETs)with a dual-gated(DG)architecture,which consists of symmetrical thickness for back gate(BG)and top gate(TG)dielectric.The thickness-dependent charge transport in our DG-MoS2 device is revealed by a four-terminal electrical measurement which excludes the contact influence,and the TCAD simulation is also applied to explain the experimental data.Our results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS2 channel,as it confines charge carriers in the center of the channel,which reduces the scattering and boosts the mobility compared to the single gating case.Furthermore,temperature-dependent transfer curves reveal that multi-layer MoS2 DG-FET is in the phonon-limited transport regime,while single layer MoS2 shows typical Coulomb impurity limited regime. 展开更多
关键词 mos2 field effect transistors DUAL-GATE quantum confinement Coulomb impurity
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Construction of MoS2 field effect transistor sensor array for the detection of bladder cancer biomarkers 被引量:7
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作者 Yujie Yang Bo Zeng +3 位作者 Yingxue Li Huageng Liang Yanbing Yang Quan Yuan 《Science China Chemistry》 SCIE EI CAS CSCD 2020年第7期997-1003,共7页
Bladder cancer is one of the commonest malignant tumors of urinary system with high recurrence. However, currently developed bladder cancer urine diagnosis methods are hindered by the low detection sensitivity and acc... Bladder cancer is one of the commonest malignant tumors of urinary system with high recurrence. However, currently developed bladder cancer urine diagnosis methods are hindered by the low detection sensitivity and accuracy. Herein, a molybdenum disulfide(MoS2) nanosheets-based field effect transistor(FET) sensor array was constructed for simultaneous detection of multiple bladder cancer biomarkers in human urine. With the excellent electronic property of MoS2 and the high specific identification capability of recognition molecules, the proposed biosensor array could simultaneously detect nuclear matrix protein 22(NMP22) and cytokeratin 8(CK8) with a wide linear range of 10-6–10-1 pg mL-1 and an ultra-low detection limit of 0.027 and 0.019 aM, respectively. Furthermore, this highly sensitive and specific MoS2 FET sensor array could be used to identify bladder cancer biomarkers from human urine samples. This designed high-performance biosensor array shows great potential in the future diagnosis of bladder cancer. 展开更多
关键词 mos 2 field effect transistor bladder cancer sensor array NMP22 CK8
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Manganese and chromium doping in atomically thin MoS2 被引量:1
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作者 Ce Huang Yibo Jin +3 位作者 Weiyi Wang Lei Tang Chaoyu Song Faxian Xiu 《Journal of Semiconductors》 EI CAS CSCD 2017年第3期76-81,共6页
Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack o... Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers.Here we report on the chromium(Cr) and manganese(Mn)doping in atomically-thin MoS_2 crystals grown by chemical vapor deposition.The Cr/Mn doped MoS_2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra,respectively,compared with the undoped one at 1.85 eV.The field-effect transistor(FET) devices based on the Mn doping show a higher threshold voltage than that of the pure MoS_2 while the Cr doping exhibits the opposite behavior.Importantly,the carrier concentration in these samples displays a remarkable difference arising from the doping effect,consistent with the evolution of the FET performance.The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy.The successful incorporation of the Mn and Cr impurities into the monolayer MoS_2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors. 展开更多
关键词 mos2 field effect transistors dilute magnetic semiconductors two-dimensional materials
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