The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island ...The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.展开更多
With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good perf...With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).展开更多
基金supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005)the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005)
文摘The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.
文摘With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).
