在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effec...在评估和优化半导体器件开关瞬态特性领域,解析模型因具有简单、直观、应用便捷等优点得到广泛研究。相较同等功率等级的硅基功率器件,碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)可以应用于更高开关速度,其开关瞬态特性更为复杂,开关瞬态解析建模也更加困难。该文总结现有的针对SiC MOSFET与二极管换流对的开关瞬态解析建模方法,在建模过程中依次引入各种简化假设,按照简化程度由低到高的顺序,梳理解析建模的逐步简化过程。通过对比,评估各模型的优缺点以及适用场合,对其中准确性、实用性都较强的分段线性模型进行详细介绍;之后,对开关瞬态建模中关键参数的建模方法进行总结与评价;最后,指出现有SiC MOSFET开关瞬态解析模型中存在的问题,并对其未来发展给出建议。展开更多
The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island ...The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.展开更多
With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good perf...With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).展开更多
在详细分析MOSFET输出电容对CLLLC谐振变换器运行原理和工作特性影响的基础上,针对MOSFET输出电容在续流阶段会产生振荡的问题,提出一种优化的参数设计方法,可在保持自然软开关特性的同时减轻振荡;针对由输出电容引起的变换器轻空载工...在详细分析MOSFET输出电容对CLLLC谐振变换器运行原理和工作特性影响的基础上,针对MOSFET输出电容在续流阶段会产生振荡的问题,提出一种优化的参数设计方法,可在保持自然软开关特性的同时减轻振荡;针对由输出电容引起的变换器轻空载工作时输出电压漂高的问题,采取电压滞环间歇模式控制,可有效将输出电压调节至额定值,同时降低变换器轻空载工作时的损耗;最后,搭建了一台1 k W、400 V/48 V的实验样机,实验结果证明了所提优化设计和控制策略的正确性和可行性。展开更多
在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提...在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。展开更多
基金supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005)the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005)
文摘The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.
文摘With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).
文摘在详细分析MOSFET输出电容对CLLLC谐振变换器运行原理和工作特性影响的基础上,针对MOSFET输出电容在续流阶段会产生振荡的问题,提出一种优化的参数设计方法,可在保持自然软开关特性的同时减轻振荡;针对由输出电容引起的变换器轻空载工作时输出电压漂高的问题,采取电压滞环间歇模式控制,可有效将输出电压调节至额定值,同时降低变换器轻空载工作时的损耗;最后,搭建了一台1 k W、400 V/48 V的实验样机,实验结果证明了所提优化设计和控制策略的正确性和可行性。
文摘在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。
