This paper presents a realization of a silicon-based standard CMOS,fully differential optoelectronic integrated receiver based on a metal–semiconductor–metal light detector（MSM photodetector）.In the optical receiv...This paper presents a realization of a silicon-based standard CMOS,fully differential optoelectronic integrated receiver based on a metal–semiconductor–metal light detector（MSM photodetector）.In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photogenerated currents.The optoelectronic integrated receiver was designed and implemented in a chartered 0.35μm, 3.3 V standard CMOS process.For 850 nm wavelength,it achieves a 1 GHz 3 dB bandwidth due to the MSM photodetector’s low capacitance and high intrinsic bandwidth.In addition,it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to–3 dB frequency.展开更多
In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-r...In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.展开更多
本文介绍了利用 In Ga As金属 -半导体 -金属 (MSM)长波长光探测器与 In Al As- In Ga As高电子迁移率晶体管 (HEMT)单片集成来实现长波长光接收机的材料和电路设计、工艺途径等研究工作 ,基本解决了两种器件集成的工艺兼容性的问题 ,...本文介绍了利用 In Ga As金属 -半导体 -金属 (MSM)长波长光探测器与 In Al As- In Ga As高电子迁移率晶体管 (HEMT)单片集成来实现长波长光接收机的材料和电路设计、工艺途径等研究工作 ,基本解决了两种器件集成的工艺兼容性的问题 ,实现了 1.3Gb/ s传输速率的单片集成长波长光接收机样品。展开更多
本文详细介绍了一套完整的 In Ga As MSM光探测器的等效电路模型。模型包括暗电流、直流、交流、瞬态和噪声等特性的等效电路模型。每一部分均从经典的物理模型出发 ,结合实际情况设计构造 ,并将理论曲线与试验数据进行了比较 ,结果是...本文详细介绍了一套完整的 In Ga As MSM光探测器的等效电路模型。模型包括暗电流、直流、交流、瞬态和噪声等特性的等效电路模型。每一部分均从经典的物理模型出发 ,结合实际情况设计构造 ,并将理论曲线与试验数据进行了比较 ,结果是令人满意的。展开更多
基金supported by the National Natural Science Foundation of China(Nos.60536030,60676038)the National High Technology Research and Development Program of China(No.2009AA03Z415)
文摘This paper presents a realization of a silicon-based standard CMOS,fully differential optoelectronic integrated receiver based on a metal–semiconductor–metal light detector（MSM photodetector）.In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photogenerated currents.The optoelectronic integrated receiver was designed and implemented in a chartered 0.35μm, 3.3 V standard CMOS process.For 850 nm wavelength,it achieves a 1 GHz 3 dB bandwidth due to the MSM photodetector’s low capacitance and high intrinsic bandwidth.In addition,it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to–3 dB frequency.
基金the Natural Science Basic Research Program in Shaanxi Province of China(2023-JC-YB-574)the National Natural Science Foundation of China(62304178)。
文摘In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.
文摘本文介绍了利用 In Ga As金属 -半导体 -金属 (MSM)长波长光探测器与 In Al As- In Ga As高电子迁移率晶体管 (HEMT)单片集成来实现长波长光接收机的材料和电路设计、工艺途径等研究工作 ,基本解决了两种器件集成的工艺兼容性的问题 ,实现了 1.3Gb/ s传输速率的单片集成长波长光接收机样品。
