Construction and Validation of Simple Magnetic Nanoparticle Detector Based on Giant Magnetoresistive Effect

The finding of giant magnetoresistive（GMR） effect develops a new field for the sensing application with magnetic nanoparticles（MNPs） labeling. A convenient GMR sensor was built with a permanent magnet to excite the MNPs in this work. The sensing element contained a Wheatstone bridge with the GMR material as one of its branches. The magnetic field from MNPs unbalanced the Wheatstone bridge. After being amplified, the output signals were recorded. The construction and optimization of the magnetoresistive sensing platform were discussed in detail. The detection of three kinds of MNPs validated the performance of the proposed GMR sensor. The sensor showed a fast response to the addition or removal of MNPs. Because of its simplicity, this kind of GMR sensor can be developed in a routine laboratory. The finding of this new GMR sensor will promote the development of the method of probing biomoleeules and the study on the biomolecular interaction after being labeled magnetically.

Anisotropic Magnetoresistance Effect in Amorphous and Nanocrystalline Fe(Cu,Nb)-Si-B Alloys

The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.

Martensitic transformation and related magnetic effects in Ni-Mn-based ferromagnetic shape memory alloys

Ferromagnetic shape memory alloys, which undergo the martensitic transformation, are famous multifunctional materials. They exhibit many interesting magnetic properties around the martensitic transformation temperature due to the strong coupling between magnetism and structure. Tuning magnetic phase transition and optimizing the magnetic effects in these alloys are of great importance. In this paper, the regulation of martensitic transformation and the investigation of some related magnetic effects in Ni–Mn-based alloys are reviewed based on our recent research results.

Transport Properties and CMR Effect in La_(2/3)Ca_(1/3)MnO_3

The magnetic and electrical transport properties of the colossal magnetoresistance material La_(2/3)Ca_(1/3)MnO_3 were studied. It is found that the insulator-metal transition is well consistent with the paramagnetic-ferromagnetic transition,and shifts to higher temperature with increasing applied magnetic field. These results suggest that the transport properties are triggered by the magnetic structure transition and consequently result in a CMR near T _C.

Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2

Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.

The Effect of Magnetic Field on Resistivity of Hg_(0.89)Mn_(0.11)Te in Different Temperature Range

The resistivity of Hg0.89Mn0.11Te has been measured by the superconducting quantum interference device magnetometer in the temperature range from 5 to 200 K under the applied magnetic field of 1, 2, 4 and 6.5 Tesla, respectively, compared with that of no-magnetic field. The results show that the resistivity increases with increase applied magnetic field at higher temperature from 80 to 200 K, but decreases at lower temperature from 5 to 25 K. There exists a transitive range from 25 to 80 K, where the variation of the resistivity shows different tendencies depending on the strength of magnetic field. Maximum difference of resistivity under 6.5 Tesla from that without magnetic field in the temperature range from 30 to 200 K is only about 5 Ω·cm, but it increases up to 3 orders of magnitude at 5 K. The analysis shows that the variation of resistivity of Hg0.89Mn0.11Te under the magnetic field is the algebraic sum of the transverse direction magnetoresistance effect and the sp-d exchange interaction effect. TDRME plays major role in the high temperature range. However, with the decrease of temperature, the effect of sp-d EI on the resistivity gradually exceeds that of the transverse direction magnetoresistance effect through the transitive range, and becomes the dominant effect in the temperature range from 5 to 25 K, which leads to the dramatic decrease of resistivity.

Magnetoresistance Effect in (La_(0.9)Nd_(0.1))_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3 (x=0, 0.05)

Due to the remarkable magnetoresistance (MR) effect on perovskite-type manganite, magnetoelectronics and spintronics have become attractive subjects of experimental and theoretical investigations for the application purpose. (La0.9Nd0.1)2/3Ca1/3Mn1-xFexO3(x=0, x=0.05) were prepared successfully by sol-gel method. The structure, magnetic properties, and transport properties of the compounds were investigated. The magnetoresistance effect depends on the composition and the temperature. XRD patterns show that the compound is a single phase polycrystal with pseudocubic structure. A large negative isotropic magnetoresistance effect in the samples were observed at low temperature region. The maximum MR of the samples was 77% and 97%, respectively. It was most likely due to the scattering or the tunneling transport of spin-polarized carriers in lattice under strong magnetic field.

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

GMR effect of multilayers of bcc-Fe(M)(M=Co, Ni) alloy and Cu layers has been investigated. The maximum MR ratio is found at 1.1 nm Fe(Co) and 1.3～1.4 nm Cu layer thickness in [Fe(Co)/CuJ, and at 1.6 nm Fe(Ni) and 1.4 nm Cu layer thickness in [Fe(Ni)/Cu]. Under the optimum annealing condition, the MR ratio increases up to 50% and 38% for Fe(Co) and Fe(Ni) systems, respectively. The origin of the increase of GMR is discussed, taking the progress of preferred orientation of Fe(Co)[100] or Fe(Ni)[100] by anneahng into account.

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two Ni Fe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance(MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I–V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.

Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors

A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.

Effect of Sintering on the Magnetism and Magnetoresistance of La_(1/3)Nd_(1/3)Ca_(1/3) MnO_3

Perovskite-like bulk La_1/3Nd_1/3Ca_1/3MnO_3 is prepared by solid phase reaction method. The temperature dependence of the magnetization and the relationship between CMR effect and sintering have been studied. The CMR is up to 673.9% under 1 T applied magnetic field and 100 K temperature, and that also reaches 93.5% in 0.2 T and 100 K.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Magnetic field‐enhanced water splitting enabled by bifunctional molybdenum‐doped nickel sulfide on nickel foam

Herein,we report bifunctional molybdenum-doped nickel sulfide on nickel foam(Mo-NiS_(x)/NF)for magnetic field-enhanced overall water splitting under alkaline conditions.Proper doping of Mo can lead to optimization of the electronic structure of NiS_(x),which accelerates the dissociation of H2O and the adsorption of OH−in the hydrogen evolution reaction(HER)and the oxygen evolution reaction(OER)processes,respectively.In addition,the magnetically active Mo-NiS_(x)/NF can further enhance the HER and OER activity under an applied magnetic field due to the magnetoresistance effect and the ferromagnetic(FM)exchange-field penetration effect.As a result,Mo-NiS_(x)/NF requires low overpotentials of 307 mV at 50mA cm^(−2)(for OER)and 136 mV at 10mA cm^(−2)(for HER)under a magnetic field of 10000 G.Furthermore,the electrolytic cell constructed by the bifunctional Mo-NiS_(x)/NFs as both the cathode and the anode shows a low cell voltage of 1.594 V at 10 mA cm^(−2)with optimal stability over 60 h under the magnetic field.Simultaneous enhancement of the HER and OER processes by an external magnetic field through rational design of electrocatalysts might be promising for overall water splitting applications.

Infrared Spectra of La_(0.65)Ba_xMnO_(3-δ) Oxides

The infrared spectra of La_(0.65)Ba_xMnO_(3-|?￡(c) (x = 0.35, 0.33 and 0.30) were investigated experimentally. The result shows that the sample La_(0.65)Ba_xMnO_(3-|?￡(c) has the largest Curie temperature and the smallest resistivity and wave number of the stretching vibration mode of MnO_6 octaheUron at 300 K among the investigated samples. However, the absorption strength for the stretching vibration mode of Mn0_6 octahedron in La_(0.65)Ba_xMnO_(3-|?￡(c) is stronger for parainagnetic phase than that for ferromagnelic phase, which may be connected with the reducing of the dynamic in- coherent Jahn-Teller distortion below Curie temperature. In addition, the large shift of wave number for the stretching mode at the temperatures from 293 to 423 K has been observed in La_(0.65)Ba_xMnO_(3-|?￡(c), which may be due to the in- crease of the Mn-O bond length with temperature increasing.

Magnetic and transport properties of bilayered manganites La_(1.2)Sr_(1.8)Mn_(2-x)Ga_xO_7(x=0,0.08)

The magnetic and electrical properties of nonmagnetic Ga＋3 ion substitution for Mn site are investigated in the bilayer manganite La1.2Sr1.8Mn2-xGaxO7. When the Mn is substituted by Ga, the ferromagnetic property obviously weakens, the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature. Meanwhile, doping causes the resistivity to dramatically increase, the metal-insulator transition temperature to disappear, and a greater magneto-resistance effect to occur at low temperature. These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction, and further suppresses ferromagnetic ordering and metallic conduction.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Phase Separation and Transport Behavior in La_(0.67-x)Sm_xSr_(0.33)MnO_3 System

The magnetic behavior and the transport behavior of La0.67-x Smx Sr0.33 MnO3 （x = 0. 00, 0. 10, 0. 20, 0. 30, 0. 40, 0. 50 and 0. 60 ） systems were studied through measuring the M-T curves, electron spin resonance （ ESR ） curves and ρ-T curves. The samples exhibit a long-range ferromagnetic order when x = 0. 00, 0. 10, a cluster-spin glass state when x = 0. 20 and 0. 30, and an anti-ferromagnetic state at low temperatures when x = 0. 40, 0. 50 and 0. 60. The samples of x = 0. 30 and 0.40 show phase separation at temperatures above Te. The transport behavior of the sample of x = 0. 60 becomes abnormal when the doping is high, and an insulator-metal transition occurs near To and then a metal-insulator transition occurs, which rarely appears in an ABO3 structure. It is concluded that the magnetic and electric behavior changes of the systems depend on the extra magnetism and lattice distortion effect induced by Sm doping.

Magnetism and Transport Properties of HfFe_6Ge_6-type Er_(1-x)Gd_xMn_6Ge_6(x=0.2-0.9) Compounds

Magnetic transitions and magnetotransport properties of polycrystalline Er1-xGdxMn6Ge6（x=0.2-0.9） compounds were studied.The magnetic and resistivity properties were analyzed in an applied magnetic field up to 5 T.It is found that Er1-xGdxMn6Ge6（x=0.2-0.9） compounds displays a transition from the antiferromagnetic state to the ferrimagnetic state for increasing Gd content.The Er1-xGdx Mn6Ge6 with x=0.2 and 0.5 compounds order antiferromagnetically at 430 and 432 K,respectively.The Er1-x GdxMn6Ge6 with x=0.8 and 0.9 compounds order ferrimagnetically at 462 and 471 K,respectively.The Er1-xGdxMn6Ge6 compounds undergo the second transitions below 71 K.The magnetoresistance curves of the Er0.1Gd0.9Mn6Ge6 compound in a field of 5 T are presented and the magnetoresistance effects are related to the metamagnetic transitions.

Spintronics intelligent devices

Intelligent computing paradigms have become increasingly important for the efficient processing of massive amounts of data.However,using traditional electronic devices to implement these intelligent paradigms is currently mismatched and limited by their energy,area,and speed.Spintronics,which exploits the magnetic and electrical properties of electrons,could break through these limitations and bring new possibilities to electrical devices.In particular,the tunneling magnetoresistance effect,merging quantum and spintronics,enables spintronic devices to be compatible with standard integrated circuits with a magnetic tunnel junction(MTJ)design,showing great potential for implementing hardware-based intelligent frameworks.In this review,we introduce the specific capabilities of MTJs,including nonvolatility,stochasticity,plasticity,and nonlinearity,which are highly favorable in artificial intelligence algorithms.We then present how these devices could impact the development of intelligent computing,including in-memory computing,probabilistic computing,and neuromorphic computing.Finally,we discuss their challenges and perspectives in intelligent hardware implementations.

Multiferroic tunnel junctions

Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junc- tions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic Lao.7Cao.3MnO3 and Lao.TSro.3MnO3 as the electrodes and ferroelectric （Ba, Sr）TiO3 as the barrier in trilayer planner junctions. We show that very thin （Ba, Sr）TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.