Memory Behaviors Based on ITO/Graphene Oxide/Al Structure

We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.

Microstructure evolution and shape memory behaviors of Ni_(47)Ti_(44)Nb_(9)alloy subjected to multistep thermomechanical loading with different prestrain levels

Ni_(47)Ti_(44)Nb_(9)shape memory alloy(SMA)is a promising material in the aerospace field due to its wide transformation hysteresis.The application of shape memory effect depends on multistep thermomechan-ical loading,viz.,low-temperature deformation and subsequent heating to recovery.Low-temperature deformation prestrain plays a pivotal role in shape memory properties tailoring of SMA components.However,microstructure evolution and deformation mechanisms of Ni_(47)Ti_(44)Nb_(9)SMA subjected to vari-ous prestrain levels are still unclear.To this end,microstructure evolution and shape memory behaviors of Ni_(47)Ti_(44)Nb_(9)alloy subjected to multistep thermomechanical loading with prestrain levels of 8%-16%at-28℃(M_(s)+30℃)were investigated.The results demonstrate that the stress-strain curve of the specimen exhibits four distinct stages at a maximal prestrain of 16%.Whereas stageⅡand stageⅢend at prestrains of∼8%and∼12%,respectively.In stageⅡ,the stress-induced martensitic transformation is accompanied by the dislocation slip of the NiTi matrix andβ-Nb inclusions.In stageⅢ,in addition to the higher density of dislocations and further growth of stress-induced martensite variants(SIMVs),(001)compound twins are introduced as a result of the(001)deformation twinning in stress-induced martensite.More{20-1}martensite twins are gradually introduced in stageⅣ.Correspondingly,after subsequent unloading and heating,a higher density of{114}austenite twins form in the specimen with a larger prestrain of 16%.With increasing prestrain from 8%to 16%,the recoverable strainε_(re)^(T)upon heating increases first and then decreases.Theε_(re)^(T)obtains a maximum of 7.03%at 10%prestrain and de-creases to 6.17%at 16%prestrain.The increase ofε_(re)^(T)can be attributed to the formation of new SIMVs,the further growth of existing SIMVs,and the recoverable(001)compound twins.While the decrease ofε_(re)^(T)is mainly associated with the irrecoverable strain by{20−1}martensite twins.The effect ofβ-Nb inclusions on the evolution of SIMVs is also found herein that deformedβ-Nb inclusions can significantly hinder the growth and recoverability of adjacent stress-induced martensite.

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal（Si-NC） nonvolatile memory（NVM） devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor（CMOS） technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size（12 nm） and areal density（1.8×10^（11）/cm^2） of Si-NCs.The program/erase（P/E） speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration.

A phenomenological memristor model for synaptic memory and learning behaviors

Properties that are similar to the memory and learning functions in biological systems have been observed and reported in the experimental studies of memristors fabricated by different materials. These properties include the forgetting effect, the transition from short-term memory（STM） to long-term memory（LTM）, learning-experience behavior, etc. The mathematical model of this kind of memristor would be very important for its theoretical analysis and application design.In our analysis of the existing memristor model with these properties, we find that some behaviors of the model are inconsistent with the reported experimental observations. A phenomenological memristor model is proposed for this kind of memristor. The model design is based on the forgetting effect and STM-to-LTM transition since these behaviors are two typical properties of these memristors. Further analyses of this model show that this model can also be used directly or modified to describe other experimentally observed behaviors. Simulations show that the proposed model can give a better description of the reported memory and learning behaviors of this kind of memristor than the existing model.

SHAPE MEMORY EFFECT OF SLIGHTLY-CROSSLINKED POLYETHYLENE

A series of slightly crosslinked polyethylenes (SXLPE) was prepared by a one-step method using dicumyl peroxide as crosslinking agent in a Haake Mixer. The gel contents G (Soxhlet extracted) of the samples are in the range from 5% to 20% by weight. Their shear viscosity, crystallization and melting behavior, dynamic mechanical properties and shape recovery effect were systematically investigated in terms of the content of the crosslinking agent. It shows that under certain experimental conditions the SXLPE's may exhibit good shape fixation ability and shape memory properties, which are similar to those of the commercially available shape memory polyethylenes prepared by gamma-irradiation technique. However the shape memory behavior of these samples is not very stable due to their low crosslinking degree, or gel content. Thus their application is limited in special cases with fast strain fixing procedures. (Author abstract) 9 Refs.

Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

Memory and behavior-related problems of patients with neurocognitive disorders and the attitudes of their caregivers

Objective:The purpose of this study was to investigate the memory and behavior-related problems of patients with neurocognitive disorders and the attitudes of their caregivers so as to provide an effective basis for nursing interventions against such problems.Methods:The subjects were selected from patients who were under treatment or short-term hospitalization between April 2011 and March 2012.One hundred fifty-three patients with neurocognitive disorders and their major caregivers were selected from 9 grade 3 Class A hospitals of Hunan Province.The Revised Memory and Behavior Problems Checklist(RMBPC)was used to measure the memory and behavior-related problems of patients with neurocognitive disorders and the influence on their caregivers.The occurrence of different memory and behavior-related prob-lems and the distress on their caregivers was compared.Results:The RMBPC investigation showed that among 153 patients and their caregivers,152(99.3%)had memory-related problems,137(89.5%)had depression,and 136 patients(88.9%)had destructive behaviors.The incidence of memory-related problems was higher than depression and destructive behaviors(P<0.01).Caregivers bore more distress when encountering destructive behaviors(1.95±1.13 points)than memory-related problems and depression(0.91±0.76 points and 0.89±0.85 points;P<0.01).Curve fitting was used to analyze the relationship between the number of memory and behavior-related problems and the distress on their caregivers.A curve correlation existed between the two factors(the recorded maximum value of the Cubic equation curve was 0.278,F=229.212,P<0.05).Conclusion:Among patients with neurocognitive disorders,memory-related problems had the highest incidence,while the caregivers bore the strongest distress when encountering destructive behaviors,thus interventions should be conducted in consideration of patient memory and behavior-related problems,and caregivers’attitude to further reduce caregiver burden.

Electroactive Shape Memory Cyanate/Polybutadiene Epoxy Composites Filled with Carbon Black

Electroactive shape memory composites were synthesized using polybutadiene epoxy （PBEP） and bisphenol A type cyanate ester （BACE） filled with different contents of carbon black （CB）. Dynamic mechanical analysis （DMA）, scanning electron microscopy （SEM）, electrical performance and electroactive shape memory behavior were systematically investigated. It is found that the volume resistivity decreased due to excellent electrical conductivity of CB, in turn resulting in good electroactive shape memory properties. The content of CB and applied voltage had significant influence on electroactive shape memory effect of developed BACE/PBEP/CB composites. Shape recovery can be observed within a few seconds with the CB content of 5 wt% and voltage of 60 V. Shape recovery time decreased with increasing content of CB and voltage. The infrared thermometer revealed that the temperature rises above the glass transition temperature faster with the increase of voltage and the decrease of resistance.

Investigation on Structures and Properties of Shape Memory Polyurethane/Silica Nanocomposites

In this study, high performance shape memory polyurethane （SMPU）/silica nanocomposites with different silica weight fraction including SMPU bulk, 3%, 4.5%, 6%, 7.5%, 10%, were prepared by sol-gel process initiated by the solid acid catalyst of p-toluenesulfonic acid （PTSA）. Field emission scanning electron microscopy （FE-SEM） and transmission electron microscopy （TEM） observation show that the silica nanoparticles are dispersed evenly in SMPU/silica nanocomposites. Tensile test and dynamic mechanical analysis （DMA） suggest that the mechanical properties and the glass transition temperature （Tg） of the nanocomposites were significantly influenced by silica weight fraction. Thermogravimetric analysis （TGA） was utilized to evaluate the thermal stability and determine the actual silica weight fraction. The TGA results indicate that the thermal stability can be enhanced with the hybridization of silica nanoparticles. Differential scanning calorimetry （DSC） was conducted to test the melting enthalpy （△H） and the results suggest that the AH was markedly improved for the SMPU/silica nanocomposites. Thermomechanical test was conducted to investigate the shape memory behavior and the results show that the shape fixity is improved by hybridization of silica and good shape recovery can be obtained with the increasing of cycle number for all the samples.

Effects of subconvulsive electrical stimulation to the hippocampus on emotionality and spatial learning and memory in rats

Objective To observe the effects of repeated subconvulsive electrical stimuli to the hippocampus on the emotional behavior and spatial learning and memory ability in rats.Methods One hundred and eight male Wistar rats were randomized into 3 groups. Animals in group SE (n = 42) were given subconvulsive electrical stimulation to the hippocampus through a constant pulsating current of 100 μA with an intratrain frequency of 25 Hz, pulse duration of 1 millisecond, train duration of 10 seconds and interstimulus interval of 7 minutes, 8 times a day, for 5 days. In the electrode control group or CE group (n = 33), animals were implanted with an electrode in the hippocampus, but were not stimulated. Group NC (n =33) animals received no electrode or any stimulation. The emotional behavior of experimental rats was examined by activity in an unfamiliar open field and resistance to capture from the open field, while the spatial learning and memory ability was measured during training in a Morris water maze.Results The stimulated rats tested 1 month after the last round of stimulation displayed substantial decreases in open field activity (scale: 10. 4±2. 3, P<0. 05) and increases in resistance to capture (scale: 2. 85±0. 56, P < 0. 01 ). The amount of time for rats in group SE to find the platform (latency) as a measurement for spatial bias was prolonged (29±7) seconds after 15 trials in the water maze, P<0. 05). The experimental rats swam aimlessly in all four pool quadrants during the probe trial in the Morris water maze.Conclusions Following repeated subconvulsive electrical stimuli to the hippocampus, rats displayed long-lasting significant abnormalities in emotional behavior, increased anxiety and defensiveness, enhanced ease to and delayed habituation to startlement, transitory spatial learning and memory disorder, which parallels many of the symptoms in posttraumatic stress disorder patients.

海马体启发的与光照时长相关的记忆器件用于神经编码

本文在海马体的启发下设计了一种与光照时长相关的记忆器件.与常规的持续性正/负电导不同,基于类网状二硫化钼沟道层的记忆器件表现出随光照时长逐渐降低的正光电导.由于光照下缺陷诱导的捕获陷阱会在阳极附近形成耗尽层,导致局部电场畸变,从而使载流子分离效率净降低,该器件表现出随光照时长先增加后降低的光响应,而且再次光激发的响应电流低于前一次光激发的电流,即再次光激发读出电流与前一次光照时长相关.因此在405 nm激光光照下该器件可用于光照时长编码和模拟压力诱导下的完整记忆行为包括记忆编码、存储和再检索.此外,通过再引入450 nm激光可以实现光照时长编码的加密与解密,同时也可以进一步模拟压力引发的相应激素对记忆的影响.