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“帕纳斯的进阶”——“活的当下”的初始规定及其三个解释模型
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作者 岳富林 《四川大学学报(哲学社会科学版)》 北大核心 2024年第1期73-80,210,211,共10页
从胡塞尔早期开始考察“活的当下”,是准确把握其系统性地位的必要步骤。通过重构性分析1893—1905年文本,我们发现:胡塞尔在亚里士多德-奥古斯丁争执和迈农-斯特恩争执中的态度表明,“活的当下”一开始就被规定为具有“厚度”的当下;... 从胡塞尔早期开始考察“活的当下”,是准确把握其系统性地位的必要步骤。通过重构性分析1893—1905年文本,我们发现:胡塞尔在亚里士多德-奥古斯丁争执和迈农-斯特恩争执中的态度表明,“活的当下”一开始就被规定为具有“厚度”的当下;作为对具有“厚度”之当下的第一个正面解释,心理学模型具有相对主义和循环论证的根本缺陷;形式化模型作为第二个解释虽然避免相对主义,但也只是论证了一种必然的可能性;第三个解释,即清新回忆模型,试图描述“活的当下”的现实被给予性,但其“内容-立义”模式使得它无法说明时间意识的直接性和连续性。因此,“活的当下”在此一阶段还在“帕纳斯的进阶”途中。 展开更多
关键词 “活的当下” “帕纳斯的进阶” 胡塞尔 “厚度” 时间现象学 清新回忆
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Van der Waals materials-based floating gate memory for neuromorphic computing 被引量:1
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作者 Qianyu Zhang Zirui Zhang +3 位作者 Ce Li Renjing Xu Dongliang Yang Linfeng Sun 《Chip》 EI 2023年第4期27-44,共18页
With the advent of the“Big Data Era”,improving data storage density and computation speed has become more and more urgent due to the rapid growth in different types of data.Flash memory with a floating gate(FG)struc... With the advent of the“Big Data Era”,improving data storage density and computation speed has become more and more urgent due to the rapid growth in different types of data.Flash memory with a floating gate(FG)structure is attracting great attention owing to its advantages of miniaturization,low power consumption and reli-able data storage,which is very effective in solving the problems of large data capacity and high integration density.Meanwhile,the FG memory with charge storage principle can simulate synaptic plasticity perfectly,breaking the traditional von Neumann computing ar-chitecture and can be used as an artificial synapse for neuromorphic computations inspired by the human brain.Among many candidate materials for manufacturing devices,van der Waals(vdW)materials have attracted widespread attention due to their atomic thickness,high mobility,and sustainable miniaturization properties.Owing to the arbitrary stacking ability,vdW heterostructure combines rich physics and potential 3D integration,opening up various possibilities for new functional integrated devices with low power consumption and flexible applications.This paper provides a comprehensive review of memory devices based on vdW materials with FG structure,including the working principles and typical structures of FG structure devices,with a focus on the introduction of various highperformance FG memories and their versatile applications in neuro-morphic computing.Finally,the challenges of neuromorphic devices based on FG structures are also discussed.This review will shed light on the design and fabrication of vdW material-based memory devices with FG engineering,helping to promote the development of practical and promising neuromorphic computing. 展开更多
关键词 Van der Waals materials Floating gate memory MEMRISTOR Neuromorphic computing
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柔性无机铁电薄膜的制备及其在存储器领域应用研究进展 被引量:1
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作者 戚佳斌 谢欣瑜 李忠贤 《人工晶体学报》 CAS 北大核心 2023年第3期380-393,共14页
与传统硅基电子相比,柔性电子因其独特的便携性、折叠卷曲性和生物相容性被广泛研究。柔性存储器作为柔性电子重要分支,在可穿戴设备、智慧医疗、电子皮肤等领域展现出良好的应用前景。同时随着5G、人工智能、物联网等新一代信息技术深... 与传统硅基电子相比,柔性电子因其独特的便携性、折叠卷曲性和生物相容性被广泛研究。柔性存储器作为柔性电子重要分支,在可穿戴设备、智慧医疗、电子皮肤等领域展现出良好的应用前景。同时随着5G、人工智能、物联网等新一代信息技术深入应用,市场对高密度、非易失、超低功耗柔性存储器的需求持续释放,催生了柔性铁电存储器件的研究热潮。本文综述了近年来柔性无机铁电薄膜的制备及其在存储器领域应用进展。首先介绍了柔性铁电薄膜制造技术的发展情况,包括柔性基板上的范德瓦耳斯异质外延、刚性基板上的化学蚀刻分层、新型二维(2D)铁电材料生长等,然后介绍了基于无机铁电薄膜的柔性存储器的研究进展,最后对柔性铁电存储器的未来发展进行了展望。 展开更多
关键词 柔性 无机材料 铁电薄膜 范德瓦耳斯异质外延 化学蚀刻 二维铁电材料 存储器
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基于时序网络记忆效应的意见领袖动态识别 被引量:1
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作者 朱义鑫 朱恺 《计算机工程与设计》 北大核心 2023年第2期343-348,共6页
使用微博用户互动数据构建的社交时序网络,通过用户互动强度优化权重分配改进PageRank算法,计算网络快照中各节点影响力,引入网络快照的记忆效应参数,得到动态的意见领袖识别算法。F-Measure值的对比实验结果表明,该算法的准确率优于Pag... 使用微博用户互动数据构建的社交时序网络,通过用户互动强度优化权重分配改进PageRank算法,计算网络快照中各节点影响力,引入网络快照的记忆效应参数,得到动态的意见领袖识别算法。F-Measure值的对比实验结果表明,该算法的准确率优于PageRank算法、HITS算法;记忆效应衰减率的不同取值对该意见领袖动态识别算法准确率有显著影响,为网络舆情的动态监管提供了一种方法和手段。 展开更多
关键词 网络舆情 时序网络 互动强度 权重分配 记忆效应 意见领袖 动态识别
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On the Lüders band formation and propagation in NiTi shape memory alloys
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作者 Bashir S.Shariat Yingchao Li +2 位作者 Hong Yang Yunzhi Wang Yinong Liu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第21期22-29,共8页
Near-equiatomic NiTi shape memory alloys are known to exhibit Lüders-type deformation associated with a stress-induced transformation.Many studies have been conducted in the past mainly focusing on the macroscopi... Near-equiatomic NiTi shape memory alloys are known to exhibit Lüders-type deformation associated with a stress-induced transformation.Many studies have been conducted in the past mainly focusing on the macroscopic characteristics of the phenomenon and some theories have been proposed in the literature to explain its mechanisms,but some aspects of this phenomenon are still unclear,particularly at the microscopic scale.This study investigated the local strain evolution during the initiation and propagation of Lüders band in a pseudoelastic NiTi alloy during tensile deformation by means of digital image correlation(DIC)analysis.Based on the evidence collected,distinct stages of Lüders band formation and propagation are defined and the corresponding local strain rates are obtained.These local strain rates are much higher than the global strain rate of the testing,giving insight to the mechanism of this phenomenon. 展开更多
关键词 Shape memory alloy(SMA) NITI Martensitic transformation ders-type deformation ders band Digital image correlation(DIC)
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慢性脑缺血对大鼠神经行为学和脑白质病理学变化的影响 被引量:1
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作者 杨晶 邓方 +1 位作者 乔松 冯加纯 《中国脑血管病杂志》 CAS 2009年第12期646-650,共5页
目的观察慢性脑缺血及脑缺血合并高血压对大鼠脑白质行为学和病理学的变化的影响。方法5个月龄的正常Wistar雄性大鼠30只及自发性高血压Wistar雄性大鼠20只,随机分为单纯缺血组12只,假缺血组9只,空白对照组9只;高血压+缺血组11只,单纯... 目的观察慢性脑缺血及脑缺血合并高血压对大鼠脑白质行为学和病理学的变化的影响。方法5个月龄的正常Wistar雄性大鼠30只及自发性高血压Wistar雄性大鼠20只,随机分为单纯缺血组12只,假缺血组9只,空白对照组9只;高血压+缺血组11只,单纯高血压组9只。采用双侧颈总动脉结扎法制作慢性前脑缺血模型。术后3个月用Morris水迷宫记录缺血前后大鼠空间记忆能力。免疫组化染色检测皮质下白质区髓鞘碱性蛋白(MBP)、高分子量神经丝蛋白(NF-H)和神经胶质酸性蛋白(GFAP)的表达情况。结果术后3个月结果:①单纯缺血组、单纯高血压组、高血压+缺血组的逃避潜伏期均较假缺血组及空白对照组延长(P<0.01);单纯缺血组与单纯高血压组相比,差异无统计学意义;高血压+缺血组比单纯缺血组及单纯高血压组逃避潜伏期延长趋势更明显。②与假缺血组比较,单纯缺血组、单纯高血压组、高血压+缺血组皮质下白质GFAP阳性细胞数增多,MBP、NF-H阳性细胞数均减少,差异有统计学意义(P<0.01);单纯缺血组与单纯高血压组比较,差异无统计学意义。高血压+缺血组GFAP阳性细胞增多、MBP、NF-H阳性细胞减少趋势均较单纯缺血组和单纯高血压组明显。结论慢性脑缺血可导致大鼠空间记忆能力下降;脑白质GFAP表达增多,MBP、NF-H表达减少可能参与其病理生理过程;高血压可以明显加重上述改变。 展开更多
关键词 脑缺血 脑损害 慢性 大鼠 自发性高血压 记忆障碍 病理学 皮质下白质
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一种基于碳纳米管的随机存储器
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作者 孙劲鹏 王太宏 《微纳电子技术》 CAS 2002年第10期8-13,26,共7页
随着传统存储器集成度的不断提高,每个存储单元的电子数目不断减少,并逐渐接近其极限。为了解决传统存储器件发展遇到的困难,利用碳纳米管之间范德瓦耳斯力,设计了一种基于碳纳米管的可读写的随机存储器,研究了系统的双稳性,讨论了存储... 随着传统存储器集成度的不断提高,每个存储单元的电子数目不断减少,并逐渐接近其极限。为了解决传统存储器件发展遇到的困难,利用碳纳米管之间范德瓦耳斯力,设计了一种基于碳纳米管的可读写的随机存储器,研究了系统的双稳性,讨论了存储器的优点和可行性,并认为系统具有良好存储效应所应满足的条件。 展开更多
关键词 碳纳米管 随机存储器 范德瓦耳斯力 动态随机存储器 化学汽相沉积
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Band-tailored van der Waals heterostructure for multilevel memory and artificial synapse 被引量:9
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作者 Yanan Wang Yue Zheng +7 位作者 Jing Gao Tengyu Jin Enlong Li Xu Lian Xuan Pan Cheng Han Huipeng Chen Wei Chen 《InfoMat》 SCIE CAS 2021年第8期917-928,共12页
Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage memory.However,high program voltage induced substanti... Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage memory.However,high program voltage induced substantial energy consumption,which is one of the primary concerns,hinders their applications in lowenergy-consumption artificial synapses for neuromorphic computing.In this study,we demonstrate a three-terminal floating gate device based on the vdWH of tin disulfide(SnS2),hexagonal boron nitride(h-BN),and few-layer graphene.The large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole-injection barrier across h-BN.Our floating gate device,as a nonvolatile multilevel electronic memory,exhibits large on/off current ratio(105),good retention(over 104 s),and robust endurance(over 1000 cycles).Moreover,it can function as an artificial synapse to emulate basic synaptic functions.Further,low energy consumption down to7 picojoule(pJ)can be achieved owing to the small program voltage.High linearity(<1)and conductance ratio(80)in long-term potentiation and depression(LTP/LTD)further contribute to the high pattern recognition accuracy(90%)in artificial neural network simulation.The proposed device with attentive band engineering can promote the future development of energy-efficient memory and neuromorphic devices. 展开更多
关键词 artificial synapse band engineering three-terminal floating gate memory tin disulfide van der Waals heterostructure
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被砸碎了的时代纪念碑——密斯·凡·德·罗的战场 被引量:1
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作者 田中纯 吴茵 宁晶 《建筑师》 2009年第5期100-106,共7页
本文介绍了密斯晚期的重要作品——德国柏林新国家美术馆的诞生过程和其主要特点,并从"文化表象研究"的角度,深入剖析了新国家美术馆的空间内涵和隐喻特点,揭示了它的建筑外观作为"外表的表象"的虚幻特点,和其内部... 本文介绍了密斯晚期的重要作品——德国柏林新国家美术馆的诞生过程和其主要特点,并从"文化表象研究"的角度,深入剖析了新国家美术馆的空间内涵和隐喻特点,揭示了它的建筑外观作为"外表的表象"的虚幻特点,和其内部展厅空间同样具有的作为美术作品"镜框"的实质,以及这二者与承载这座建筑的台基(或"镜框")——柏林这座城市所具有的破碎、无序的历史记忆之间的联系。最后作者暗示,密斯建筑中所面临的"精神-政治问题",在当代建筑学中依然存在。 展开更多
关键词 密斯 新国家美术馆 空间 表象 记忆
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Control of photocurrent and multi-state memory by polar order engineering in 2H-stackedα-In_(2)Se_(3) ferroelectric 被引量:1
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作者 Baohua Lv Wuhong Xue +8 位作者 Zhi Yan Ruilong Yang Hao Wu Peng Wang Yuying Zhang Jiani Hou Wenguang Zhu Xiaohong Xu 《Science China Materials》 SCIE EI CAS CSCD 2022年第6期1639-1645,共7页
Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this pape... Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this paper,we report a planar multi-state memory device built upon a twodimensional(2D)van der Waals layered ferroelectric material,2Hα-In_(2)Se_(3).Three(high,median and low)resistance states are demonstrated to be interconvertible in this device with a fast switching speed,excellent endurance and retention performances via the modulation of the polar order of the ferroelectricα-In_(2)Se_(3) layers under an in-plane electric field.Remarkably,reversible switching between the median-resistance state and the low-resistance state can be achieved by an ultralow electric field of 1-2 orders of magnitude smaller than the reported values in other 2D ferroelectric materialbased memory devices.Furthermore,the three different polar order states are discovered to exhibit distinctive photoresponses.These results demonstrate great potentials ofα-In_(2)Se_(3)in nonvolatile high-density memory and advanced optoelectronic device applications. 展开更多
关键词 van der Waals ferroelectric semiconductors 2H-stackedα-In_(2)Se_(3) polar order arrangement PHOTOCURRENT multi-state memory
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一种基于碳纳米管的随机存储器 被引量:16
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作者 孙劲鹏 王太宏 《物理学报》 SCIE EI CAS CSCD 北大核心 2002年第9期2096-2100,共5页
利用碳纳米管之间范德瓦耳斯力 ,设计了一种基于碳纳米管的可读写的随机存储器 ,研究了系统的双稳性 ,讨论了存储器的优点和可行性 。
关键词 碳纳米管 范德瓦耳斯力 动态随机存储器 双稳性
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