High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.

Photoelectrochemical and Spectroscopic Studies of Colloidal Nano-Particles of Mixed TiO₂/V₂O₅Metal-Oxide Semiconductors

Due to its importance in hydrogen production during the photolysis process of aqueous suspensions process, mixed TiO2/V2O5 metal-oxide semiconductors were prepared and subjected to crystal structure investigation using X-ray technique. The photoelectrochemical behavior of these TiO2/V2O5 was investigated by photolysis of aqueous suspensions of these oxides containing [Fe(CN)6]4-. X-ray diffraction analysis indicated that the TiO2 crystallites grow in the (1 0 1) direction, while The V2O5 crystallites seem to be growing in the (4 2 0) direction, with increasing concentration of V2O5. Photolysis studies show that photochemical activities that maintained the [Fe(CN)6]4/[Fe(CN)6]3- redox reversibility increased by increasing V2O5 up to 50% and then decreased at greater percentages. Aqueous nano systems used in these studies retained their stability as indicated by the reproducibility of their photo-catalytic activities.

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-density metal- oxide semiconductor （LDMOS）. Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state （on-state） BV of the SOI p-channel LDMOS can reach 741 （620） V in the 3μm-thick buried oxide layer, 50μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.

Wet thermal annealing effect on TaN/HfO_2/Ge metal-oxide-semiconductor capacitors with and without a GeO_2 passivation layer

Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor （MOS） structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance-voltage （C-V） and current-voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 ℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2, which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors. However, wet thermal annealing at 400 ℃ can decrease the GeOx interlayer thickness at the HfO2/Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeOx in the wet ambient. The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C V characteristics for the as-prepared HfO2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain

Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V.s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxiai compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

A power metal-oxide-semiconductor field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

X-ray detection based on complementary metal-oxide-semiconductor sensors

Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the un- derlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors

Negative Bias Temperature Instability （NBTI） has become one of the most serious reliability problems of metaloxide-semiconductor field-effect transistors （MOSFETs）. The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H^＋ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H^＋ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H^＋ generated during NBTI stress.

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor（MOSFET） are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

Reconstruction model for temperature and concentration profiles of soot and metal-oxide nanoparticles in a nanofluid fuel flame by using a CCD camera

This paper presents a numerical study on the simultaneous reconstruction of temperature and volume fraction fields of soot and metal-oxide nanoparticles in an axisymmetric nanofluid fuel sooting flame based on the radiative energy images captured by a charge-coupled device(CCD)camera.The least squares QR decomposition method was introduced to deal with the reconstruction inverse problem.The effects of ray numbers and measurement errors on the reconstruction accuracy were investigated.It was found that the reconstruction accuracies for volume fraction fields of soot and metaloxide nanoparticles were easily affected by the measurement errors for radiation intensity,whereas only the metal-oxide volume fraction field reconstruction was more sensitive to the measurement error for the volume fraction ratio of metaloxide nanoparticles to soot.The results show that the temperature,soot volume fraction,and metal-oxide nanoparticles volume fraction fields can be simultaneously and accurately retrieved for exact and noisy data using a single CCD camera.

Tuning the Electrochemical Property of the Ultrafine Metal-oxide Nanoclusters by Iron Phthalocyanine as Efficient Catalysts for Energy Storage and Conversion

Nanoclusters(NCs)have been demonstrated of outstanding performance in electrochemical energy storage and conversion technologies due to their strong quantum confinement effects and strong interaction with supports.Here,we developed a class of ultrafine metal-oxide(MOx,M=Fe,Co and Ni)NCs incorporated with iron phthalocyanine(FePc),MOx/FePc-G,supported on graphene as high-performance catalysts for oxygen reduction reaction(ORR),oxygen evolution reaction(OER),and carbon dioxide reduction(CO2RR).The high activities for ORR and OER are attributed to the electron donation and accepting ability of the highly redox active of FePc-G that could tune the properties of MOx.The FeOx/FePc-G exhibits an extremely positive half-wave potential(E1/2)of 0.888 and 0.610 V for ORR in alkaline and neutral conditions,respectively,which is around 60 mV more positive than that of Pt/C.And NiOx/FePc-G shows similar OER activity with the state-of-the-art catalysts,Ir/C,and better performance than NiFeO NCs supported on graphene.Remarkably,the CoOx/FePc-G and NiOx/FePc-G show high activity and selectivity to reduce CO2 into CO with a low onset potential of-0.22 V(overpotential is 0.11 V).

Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo-MXene/Mo-Metal Sulfides for Electromagnetic Response

The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave(EMW)absorption materials.However,the loss mechanism in traditional heterostructures is relatively simple,guided by empirical observations,and is not monotonous.In this work,we presented a novel semiconductor-semiconductor-metal heterostructure sys-tem,Mo-MXene/Mo-metal sulfides(metal=Sn,Fe,Mn,Co,Ni,Zn,and Cu),including semiconductor junctions and Mott-Schottky junctions.By skillfully combining these distinct functional components(Mo-MXene,MoS_(2),metal sulfides),we can engineer a multiple heterogeneous interface with superior absorption capabilities,broad effective absorption bandwidths,and ultrathin matching thickness.The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer,as confirmed by density functional theory,which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption.We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces.The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide,which achieved remarkable reflection loss values of-70.6 dB at a matching thickness of only 1.885 mm.Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology.This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

New Horizon in stabilization of single atoms on metal-oxide supports for CO_(2) reduction

Elecrochemical CO_(2) reduction is a promising route to convert CO_(2) into the value added chemicals,and to control the increasing accumulation of 002 in the atmosphere.The CO_(2) molecule is stable and chemically inert,so a highly efficient electrocatalyst is required for CO_(2) reduction.The single atoms with metal oxdde support is a new fronder in CO_(2) reduction.The supported single atoms contain disperse isolated atoms with an appropriate support maxcimize the atom efficiency of metals for boosting the catalytc perfomance.In this review,we had discussed state-of-the-art research on the synthestis of single atoms supported on the metal oxdde for boosting catalytic activity for CO_(2) reduction and special emphasis is placed on the influence of single atoms supported on metal oxdde on the CO_(2) reduction.Futhermore,we had discussed the challenges,and opportunities for paving the development of single atoms with metal support and their application in ecrocatalytic CO_(2) reduction.

Light-stimulated adaptive artificial synapse based on nanocrystalline metal-oxide film

Artificial synapses utilizing spike signals are essential elements of new generation brain-inspired computers.In this paper,we realize light-stimulated adaptive artificial synapse based on nanocrystalline zinc oxide film.The artificial synapse photoconductivity shows spike-type signal response,long and short-term memory(LTM and STM),STM-to-LTM transition and paired-pulse facilitation.It is also retaining the memory of previous exposures and demonstrates spike-frequency adaptation properties.A way to implement neurons with synaptic depression,tonic excitation,and delayed accelerating types of response under the influence of repetitive light signals is discussed.The developed artificial synapse is able to become a key element of neuromorphic chips and neuromorphic sensorics systems.