Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 ...Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.展开更多
Ce0.8Sm0.2O1.9-δ-La0.9Sr0.1Ga0.8Mg0.2O3-δ（SDC-LSGM）is prepared by the glycine-nitrate process（GNP）.SDC-LSGM composite electrolyte samples with different weight ratios are prepared by the co-combustion method so ...Ce0.8Sm0.2O1.9-δ-La0.9Sr0.1Ga0.8Mg0.2O3-δ（SDC-LSGM）is prepared by the glycine-nitrate process（GNP）.SDC-LSGM composite electrolyte samples with different weight ratios are prepared by the co-combustion method so as to obtain homogeneous nano-sized precursor powders. The X-ray diffraction （XRD） and the scan electron microscope （SEM） are used to investigate the phases and microstructures. The measurements and analyses of oxygen ionic conductivity of SDC-LSGM are carried out through the four-terminal direct current （DC） method and the electrochemical impendence spectroscopy, respectively. The optimum weight ratio of SDC-LSGM is 8∶2, of which the ionic conductivity is 0.113 S/cm at 800℃ and the conductivity activation energy is 0.620 eV. The impendence spectra shows that the grain boundary resistance becomes the main barrier for the ionic conductivity of electrolyte at lower temperatures. The appropriate introduction of LSGM to the electrolyte SDC can not only decrease the electronic conductivity but also improve the conditions of the grain and grain boundary, which is advantageous to cause an increase in oxygen ionic conductivity.展开更多
The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of ...The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.展开更多
The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV fil...The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.展开更多
基金Projects(5110205551462005)supported by the National Natural Science Foundation of China
文摘Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.
基金The National Basic Research Program of China (973 Program) (No.2007CB936300)the Natural Science Foundation of Jiangsu Province (No.BK2009293)
文摘Ce0.8Sm0.2O1.9-δ-La0.9Sr0.1Ga0.8Mg0.2O3-δ（SDC-LSGM）is prepared by the glycine-nitrate process（GNP）.SDC-LSGM composite electrolyte samples with different weight ratios are prepared by the co-combustion method so as to obtain homogeneous nano-sized precursor powders. The X-ray diffraction （XRD） and the scan electron microscope （SEM） are used to investigate the phases and microstructures. The measurements and analyses of oxygen ionic conductivity of SDC-LSGM are carried out through the four-terminal direct current （DC） method and the electrochemical impendence spectroscopy, respectively. The optimum weight ratio of SDC-LSGM is 8∶2, of which the ionic conductivity is 0.113 S/cm at 800℃ and the conductivity activation energy is 0.620 eV. The impendence spectra shows that the grain boundary resistance becomes the main barrier for the ionic conductivity of electrolyte at lower temperatures. The appropriate introduction of LSGM to the electrolyte SDC can not only decrease the electronic conductivity but also improve the conditions of the grain and grain boundary, which is advantageous to cause an increase in oxygen ionic conductivity.
文摘The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China under grant No.50902108
文摘The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.
