Mg films of various thicknesses were deposited on Si（111） substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg film thi...Mg films of various thicknesses were deposited on Si（111） substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg film thickness on the formation and structure of Mg2Si films were investigated. The results showed that the crystallization quality of Mg2Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg2Si （220） gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg2Si （220） reached its maximum when the Mg film of 380 um was used. The thickness of the Mg2Si film annealed at 400℃ for 4 h was approximately 3 times of the Mg film.展开更多
基金Supported by the National Natural Science Foundation of China(No.61264004)the Special Fund for International Cooperation of the Ministry of Science and Technology of China(No.2008DFA52210)+5 种基金the Key Sci-Tech Research Project of Guizhou Province of China(No.20113015)the Special Fund for Construction of Sci-Tech Innovative Talents Team of Guizhou Province of China(No.20114002)the Fund for International Sci-Tech Cooperation of Guizhou Province of China(No.20127004)the National Natural Science Foundation of Guizhou Province of China(No.20112323)the Young Talents Training Project of Guizhou Province of China(No.2012152)the Introducing Talents Foundation for the Doctor of Guizhou University of China(No.2010032)
文摘Mg films of various thicknesses were deposited on Si（111） substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg film thickness on the formation and structure of Mg2Si films were investigated. The results showed that the crystallization quality of Mg2Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg2Si （220） gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg2Si （220） reached its maximum when the Mg film of 380 um was used. The thickness of the Mg2Si film annealed at 400℃ for 4 h was approximately 3 times of the Mg film.
