MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxid...MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from （200） to （111）.The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.展开更多
This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperat...This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.展开更多
Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substrates by using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma- terial.The films have a v...Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substrates by using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma- terial.The films have a very smooth surface morphology and optical transparency with an index of refraction of 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi- cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surface respectively.The main parameters having influence on the deposition are the substrate temperature,the total pressure in the reaction chamber,the reaction gases and its flowrate.展开更多
以无机盐为原料,用溶胶-凝胶技术在S i(111)衬底上制备(100)取向M gO薄膜。镁硝酸盐的冰醋酸溶液加热回流转化形成的M g(CH3COO)2,与乙酰丙酮(A cA c)分子形成环状螯合物M g(CH3COO)2-x(A cA c)x可抑制M g2+离子的过度水解,经水解形成的...以无机盐为原料,用溶胶-凝胶技术在S i(111)衬底上制备(100)取向M gO薄膜。镁硝酸盐的冰醋酸溶液加热回流转化形成的M g(CH3COO)2,与乙酰丙酮(A cA c)分子形成环状螯合物M g(CH3COO)2-x(A cA c)x可抑制M g2+离子的过度水解,经水解形成的M g(OH)2-x(A cA c)x羟基聚合形成镁的羟基簇状结构溶胶。丙三醇(GL)防止羟基镁过度聚合,聚乙烯醇(PVA)分子中强极性基团-OH和金属离子螯合或化学吸附,使镁的羟基簇状结构溶胶具有线状或网状结构,易于成膜。有机添加剂也会使M gO薄膜在热处理过程的热应力因薄膜塑性增强而降低。文中对形成的M gO薄膜的微结构、形貌等进行了分析,通过M gO薄膜二次电子发射系数γ值的测定,反馈M gO薄膜的性能,为提高PDP(p lasm a d isp lay panels)性能提供依据。展开更多
基金Funded by the International Science and Technology Cooperation Project (No.2009DFB50470)the National Nature Science Foundation of China (No.50802071)International Science and Technology Cooperation Project of Hubei Province (No.2010BFA017)
文摘MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from （200） to （111）.The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.
文摘This study investigated the effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP. By an annealing process at a temperature of 450 ℃ for more than three hours, the crystallinity of the deposited MgO films was improved, but the surface of the （200）-oriented MgO thin films in the vicinity of the discharge electrodes, especially on the inner sides of the electrodes, was subjected to crack formation to the compressive stress of The failure mechanism of the MgO films plus the additional （200）-oriented MgO films was due compressive stress induced by the differences in the coefficient of thermal expansion between the electrode and the dielectric layer. In the discharging process, all MgO films were eroded unevenly, and the serious erosion occurred near the edges of the discharge electrodes. ATM（atomic force microscopy） images show that the eroded surface of the （200）-oriented MgO thin film is smoother than that of the （111）-oriented fihn. Also, the （200）-oriented MgO thin film shows an improved ability to resist ion erosion compared to the （111）-oriented film.
文摘Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substrates by using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma- terial.The films have a very smooth surface morphology and optical transparency with an index of refraction of 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi- cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surface respectively.The main parameters having influence on the deposition are the substrate temperature,the total pressure in the reaction chamber,the reaction gases and its flowrate.
文摘以无机盐为原料,用溶胶-凝胶技术在S i(111)衬底上制备(100)取向M gO薄膜。镁硝酸盐的冰醋酸溶液加热回流转化形成的M g(CH3COO)2,与乙酰丙酮(A cA c)分子形成环状螯合物M g(CH3COO)2-x(A cA c)x可抑制M g2+离子的过度水解,经水解形成的M g(OH)2-x(A cA c)x羟基聚合形成镁的羟基簇状结构溶胶。丙三醇(GL)防止羟基镁过度聚合,聚乙烯醇(PVA)分子中强极性基团-OH和金属离子螯合或化学吸附,使镁的羟基簇状结构溶胶具有线状或网状结构,易于成膜。有机添加剂也会使M gO薄膜在热处理过程的热应力因薄膜塑性增强而降低。文中对形成的M gO薄膜的微结构、形貌等进行了分析,通过M gO薄膜二次电子发射系数γ值的测定,反馈M gO薄膜的性能,为提高PDP(p lasm a d isp lay panels)性能提供依据。
