Neural function rebuilding on different bodies using microelectronic neural bridge technique

A microelectronic circuit is used to regenerate the neural signals between the proximal end and the distal end of an injured nerve.An experimental scheme is designed and carried out to verify the feasibility of the so-called microelectronic neural bridge（MNB）.The sciatic signals of the source spinal toad which are evoked by chemical stimuli are used as source signals to stimulate the sciatic of the controlled spinal toad.The sciatic nerve signals of the source spinal toad,the regenerated sciatic signals in the controlled spinal toad,and the resulting electromyography（EMG）signals associated with the gastrocnemius muscle movements of the controlled spinal toad are displayed and recorded by an oscilloscope.By analyzing the coherence between the source sciatic nerve signals and the regenerated sciatic nerve signals and the coherence between the regenerated nerve signals and the EMG signals,it is proved that the regenerated sciatic nerve signals have a relationship with the source sciatic nerve signals and control shrinkage of the leg of the controlled toad.

Microelectronic neural bridging of toad nerves to restore leg function

The present study used a microelectronic neural bridge comprised of electrode arrays for neural signal detection, functional electrical stimulation, and a microelectronic circuit including signal amplifying, processing, and functional electrical stimulation to bridge two separate nerves, and to restore the lost function of one nerve. The left leg of one spinal toad was subjected to external mechanical stimulation and functional electrical stimulation driving. The function of the left leg of one spinal toad was regenerated to the corresponding leg of another spinal toad using a microelectronic neural bridge. Oscilloscope tracings showed that the electromyographic signals from controlled spinal toads were generated by neural signals that controlled the spinal toad, and there was a delay between signals. This study demonstrates that microelectronic neural bridging can be used to restore neural function between different injured nerves.

Organic-inorganic Hybrids Towards the Preparation of Nanoporous Composite Thin Films for Microelectronic Application

Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.

SYNTHESIS AND APPLICATIONS OF NANOMATERIALS IN MICROELECTRONICS

The technology boom in microelectronics and telecommunication industry has presented a unique opportunity for nanomaterials. Nanomaterials enable the creation of unique devices, components and systems through the control of matter on a near molecular level. These new devices, components and systems will exhibit novel physical, chemical, mechanical, electrical, optical and biological properties. The synthesis processes of nanomaterials are reviewed and the applications of nanomatorials in microelectronics are discussed in this paper.

Road vehicle-induced vibration control of microelectronics facilities

A hybrid control platform is investigated in this paper to mitigate microvibrations to a group of vibration-sensitive equipment installed in a microelectronics facility subject to nearby road vehicle-induced horizontal and vertical ground motions. The hybrid control platform, on which microelectronics equipment is installed, is mounted on a building floor through a series of passive mounts and controlled by hydraulic actuators in both horizontal and vertical directions. The control platform is an elastic body with significant bending modes of vibration, and a sub-optimal control algorithm is used to manipulate the hydraulic actuators with actuator dynamics included. The finite element model and the equations of motion of the coupled platform-building system are then established in the absolute coordinate to facilitate the feedback control and performance evaluation of the platform. The horizontal and vertical ground vibrations at the base of the building induced by nearby moving road vehicles are assumed to be stationary random processes. A typical three-story microelectronics building is selected as a case study. The case study shows that the vertical vibration of the microelectronics building is higher than the horizontal. The use of a hybrid control platform can effectively reduce both horizontal and vertical microvibrations of the microelectronics equipment to the level which satisfies the stringent microscale velocity requirement specified in the Bolt Beranek & Newman (BBN) criteria.

Study on the evaluation of aerospace microelectronic industry

Aerospace microelectronic technology has become the core competence of aerospace technology. For evaluating the aerospace microelectronic industry, it is necessary to change descriptive language of goal to quantitative index that can be measured. Knowing quantified goals or tree structure and array of general goal system, with certain algorithm and processing each corresponding list or array, we can bring out a quantified general goal value. The multi-objective (multi-attribute) evaluation method and the relevant weight sum algorithm have been adopted to quantitatively evaluate and forecast the developing state of the industry. A practical example illustrates that the applied decision technique and the algorithm are feasible and effective.

Mozart Chocolates and Microelectronics,Lipizzaner Stallions and Lightweight Construction.Less well-known:Austria Is A Top Research Location

Whoever thinks of Empress Sisi,Sacher cake,skiing or the Vienna Opera Ball first in connection with Austria is not wrong at all,but this individual does overlook one important factor:Austria is actually an extremely innovative and profitable business location.In addition to highly qualified and motivated employees,Austria always boasts the highest density of world market leaders in relation to the number of inhabitants.

Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits

Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.

The Challenges of Microelectronics for the Future Digital Society: The Roles of Thin Film Technologies and of the Higher Education

The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of which is microelectronics. Connected objects involve many technological components and functions that are directly dependent of the microelectronics capabilities. If the perspectives are exciting, several challenges are appearing. The first is related to the energy consumption of all these objects, which will become enormous by 2030, and unrealistic by 2040. The second is human resources concern. The future engineers and PhD will have many obstacles to overcome. A way to face these challenges is to involve more and more new thin film technologies that must be combined with VLSI ones, and to better train students to this domain with enough know-how and with a large spectrum of knowledge suitable for multidisciplinary applications. The French national network for Higher Education in microelectronics has adopted this strategy. After presentation of the challenges, this paper deals with the innovative activities of the French network focused on thin film technologies, in order to face the challenges in a short future.

A Study of Lateralized Cognitive Processes in Upper-Division Electrical Engineering Students’: Correlating Written Language Functions with Analytical Reasoning in Microelectronics

The human brain is asymmetrical in function, with each of its two hemispheres being somewhat responsible for distinct cognitive and motor tasks, to include writing. It stands to reason that engineering students who have established entrance into their upper-division programs will have demonstrated cognitive proficiency in math and logical operations, abstract and analytical reasoning and language usage, to include writing. In this study the question was asked: is there a correlation between an upper-division electrical engineering students’ analytical reasoning ability and their descriptive writing ability? Descriptive writing is taken here to mean a students’ ability to identify key physical aspects of a mathematical model and to express—in words—a concise and well-balanced description that demonstrates a deep conceptual understanding of the model. This includes more than a description of the variables or the particular application to an engineering problem;it includes a demonstrated recognition of the basic physics that govern the model, certain limitations (idealizations) inherent in the model, and an understanding of how to make practical experimental measurements to verify the governing physics in the model. A student at this level may demonstrate proficiency in their analytical reasoning skills and hence be capable of correctly solving a given problem. However, this does not guarantee that the same student is skilled in associating equations with their physical meaning on a deep conceptual level or in understanding physical limitations of the equation. Consequently, such a student may demonstrate difficulty in mapping their comprehension of the model into written language that demonstrates a sound conceptual understanding of the governing physics. The findings represent a sample of two independent class sections of Electrical and Computer Engineering junior’s first course in Microe-lectronic Devices and Circuits during fall semesters 2012 and 2013 at a private mid-size university in NW Oregon. A total of three exams were administered to each of the 2012/2013 groups. Correlations between exam scores that students achieved on their descriptive writing of microelectronics phenomena and their analytical problem-solving abilities were examined and found to be quite significant.

Foreword to the Journal of Microelectronic Manufacturing

Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers.

Best Practices for Thermal Modeling in Microelectronics with Natural Convection Cooling: Sensitivity Analysis

A detailed sensitivity study was carried out on various key parameters from a high precision numerical model of a microelectronic package cooled by natural convection, to provide rules for the thermal modeling of microelectronic packages subjected to natural convection heat transfer. An accurate estimate of the junction temperature, with an error of less than 1˚C, was obtained compared to the experimental data for the vertical and horizontal orientations of the test vehicle in the JEDEC Still Air configuration. The sensitivity study showed that to have an accurate estimate of the temperature, the following elements should be present in the thermal model: radiation heat transfer in natural convection cooling;a computational fluid dynamics analysis to find realistic convection coefficients;detailed models of the high conductivity elements in the direction of the heat flow towards the environment;and finally precise values for the thicknesses of layers and the thermal properties of the substrate and the printed circuit board.

Progress in Space Microelectronics

Research and development work of space microelectronics of China startedin 1965 as part of the space development program of China. Jointcoordination administered by the Ministry of Aero-Space results in success of China’s first generation of space program including the launching ofcommunication satellite. It is to be emphasized that during this phase of Rand D for space microelectronics (1965～1978), we were completely iso-

Practice and Exploration of Mixed Teaching of Microelectronics

The mixed teaching mode plays an increasingly important role in stimulating students’interest and autonomy in learning,and strengthening students’learning ability.The full integration of mixed teaching mode and microelectronics teaching can not only achieve the teaching objectives smoothly,but also enable students to deepen their understanding and memory of relevant knowledge with the help of diversified and interesting teaching methods.Therefore,this paper takes the microelectronics course as an example to practice and explore the effective ways to carry out the mixed teaching mode.Teachers should not make full use of online and offline teaching resources,but also actively improve the traditional assessment systems.Through the continuous improvement of the practicality of online and offline teaching content,an easy-to-complex teaching method with a coherent content structure can be adopted to stimulate students’learning motivation,improve their enthusiasm for participation,and lay a solid foundation for further improvements in the teaching of microelectronics technology.

Tianma Microelectronics Co.Ltd.

Tianma Microelectronics Co.Ltd...

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications

Control of the electronic parameters on a novel metal–oxide–semiconductor（MOS）diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height（BH）,series resistance,and charge carrier density are extracted from the current–voltage（I–V）and the capacitance–voltage（C–V）characteristics.The properties of the MOS diode based on 4%,6% and 8% indium doped tin oxide are largely studied.The Ag/SnO2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped SnO2layer.This was grown onto n-type silicon and metallic（Au）contacts which were made by thermal evaporation under a vacuum@10^-5 Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases（334–534Ω）with the In doping level while the barrier height（BH）remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO2：In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.

Fully integrated circuit chip of microelectronic neural bridge

Nerve tracts interruption is one of the major reasons for dysfunction after spiral cord injury. The microelectronic neural bridge is a method to restore function of interrupted neural pathways, by making use of microelectronic chips to bypass the injured nerve tracts. A low-power fully integrated microelectronic neural bridge chip is designed, using CSMC 0.5-μm CMOS technology. The structure and the key points in the circuit design will be introduced in detail. In order to meet the requirement for implantation, the circuit was modified to avoid the use of off-chip components, and fully monolithic integration is achieved. The operating voltage of the circuit is 4-2.5 V, and the chip area is 1.21×1.18 mm2. According to the characteristic of neural signal, the time-domain method is used in testing. The pass bandwidth of the microelectronic neural bridge system covers the whole frequency range of the neural signal, power consumption is 4.33 mW, and the gain is adjustable. The design goals are achieved.

Call for Papers Special Section on Microelectronics

The publication of Tsinghua Science and Technology was started in 1996. Since then, it has been an international academic journal sponsored by Tsinghua University and published bimonthly. This journal aims at presenting the state-of-art scientific achievements in computer science and other IT fields.

Call for Papers Special Section on Microelectronics

The publication of Tsinghua Science and Technology was started in 1996. Since then, it has been an international academic journal sponsored by Tsinghua University and published bimonthly. This journal aims at presenting the state-of-art scientific achievements in computer science and other IT fields.