Two- dimensional Fourier transform profilometry (2 -D FTP) for data acquisition of fabric surface shapes isproposed. Phase unwrapping technique based on digitalweighted filter and reliability mask are employed. Ex-per...Two- dimensional Fourier transform profilometry (2 -D FTP) for data acquisition of fabric surface shapes isproposed. Phase unwrapping technique based on digitalweighted filter and reliability mask are employed. Ex-perimentai results of shape measurement for several fab-ric appearances are given. From the measured results, itis shown that this method can make up for not only thedisadvantage of the gray level image analysis which isonly suitable for simple structure and solid - pattern fab-ric, but also the low speed and high cost of laser dotscanning technique.展开更多
In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
目的:研究自发性癫痫大鼠皮质、海马中谷氨酸转运体-1(GLT-1)、兴奋性氨基酸载体-1(EAAC-1)的转录、表达水平及其意义。方法:选取自发性癫痫Wistar大鼠(癫痫组)和正常Wistar大鼠(正常组)各10只,采用反转录-聚合酶链式反应(RT-PCR)技术检...目的:研究自发性癫痫大鼠皮质、海马中谷氨酸转运体-1(GLT-1)、兴奋性氨基酸载体-1(EAAC-1)的转录、表达水平及其意义。方法:选取自发性癫痫Wistar大鼠(癫痫组)和正常Wistar大鼠(正常组)各10只,采用反转录-聚合酶链式反应(RT-PCR)技术检测2组大鼠皮质、海马中GLT-1、EAAC1 m RNA转录水平,采用蛋白质印迹技术检测2组大鼠皮质、海马中GLT-1、EAAC-1蛋白的表达水平。结果:癫痫组大鼠皮质中EAAC-1 m RNA相对灰度值为(0.67±0.21),明显低于正常组大鼠的(1.54±0.38)(P<0.01);2组大鼠皮质中GLT-1 m RNA和海马中GLT-1 m RNA、EAAC-1 m RNA相对灰度值差异无统计学意义(P>0.05)。癫痫组大鼠皮质中EAAC-1、GLT-1蛋白表达水平的相对灰度值分别为(72.6±8.7)和(103.7±12.6),显著低于正常组大鼠的(116.5±15.1)和(139.5±14.2)(P<0.01);癫痫组大鼠海马中GLT-1蛋白表达水平的相对灰度值(196.7±23.5)明显的高于正常组大鼠的(145.5±19.7)(P<0.01);2组大鼠海马中EAAC-1蛋白表达水平的相对灰度值差异无统计学意义(P>0.05)。结论:自发性癫痫大鼠皮质中GLT-1、EAAC-1表达水平下调可能与癫痫发生有关。展开更多
文摘Two- dimensional Fourier transform profilometry (2 -D FTP) for data acquisition of fabric surface shapes isproposed. Phase unwrapping technique based on digitalweighted filter and reliability mask are employed. Ex-perimentai results of shape measurement for several fab-ric appearances are given. From the measured results, itis shown that this method can make up for not only thedisadvantage of the gray level image analysis which isonly suitable for simple structure and solid - pattern fab-ric, but also the low speed and high cost of laser dotscanning technique.
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
文摘目的:研究自发性癫痫大鼠皮质、海马中谷氨酸转运体-1(GLT-1)、兴奋性氨基酸载体-1(EAAC-1)的转录、表达水平及其意义。方法:选取自发性癫痫Wistar大鼠(癫痫组)和正常Wistar大鼠(正常组)各10只,采用反转录-聚合酶链式反应(RT-PCR)技术检测2组大鼠皮质、海马中GLT-1、EAAC1 m RNA转录水平,采用蛋白质印迹技术检测2组大鼠皮质、海马中GLT-1、EAAC-1蛋白的表达水平。结果:癫痫组大鼠皮质中EAAC-1 m RNA相对灰度值为(0.67±0.21),明显低于正常组大鼠的(1.54±0.38)(P<0.01);2组大鼠皮质中GLT-1 m RNA和海马中GLT-1 m RNA、EAAC-1 m RNA相对灰度值差异无统计学意义(P>0.05)。癫痫组大鼠皮质中EAAC-1、GLT-1蛋白表达水平的相对灰度值分别为(72.6±8.7)和(103.7±12.6),显著低于正常组大鼠的(116.5±15.1)和(139.5±14.2)(P<0.01);癫痫组大鼠海马中GLT-1蛋白表达水平的相对灰度值(196.7±23.5)明显的高于正常组大鼠的(145.5±19.7)(P<0.01);2组大鼠海马中EAAC-1蛋白表达水平的相对灰度值差异无统计学意义(P>0.05)。结论:自发性癫痫大鼠皮质中GLT-1、EAAC-1表达水平下调可能与癫痫发生有关。
